全文获取类型
收费全文 | 473篇 |
免费 | 105篇 |
国内免费 | 21篇 |
专业分类
化学 | 90篇 |
晶体学 | 1篇 |
力学 | 18篇 |
数学 | 31篇 |
物理学 | 459篇 |
出版年
2023年 | 3篇 |
2022年 | 2篇 |
2021年 | 11篇 |
2020年 | 6篇 |
2019年 | 9篇 |
2018年 | 8篇 |
2017年 | 12篇 |
2016年 | 11篇 |
2015年 | 13篇 |
2014年 | 27篇 |
2013年 | 36篇 |
2012年 | 21篇 |
2011年 | 33篇 |
2010年 | 28篇 |
2009年 | 34篇 |
2008年 | 42篇 |
2007年 | 48篇 |
2006年 | 55篇 |
2005年 | 27篇 |
2004年 | 33篇 |
2003年 | 27篇 |
2002年 | 22篇 |
2001年 | 19篇 |
2000年 | 14篇 |
1999年 | 7篇 |
1998年 | 11篇 |
1997年 | 7篇 |
1996年 | 7篇 |
1995年 | 3篇 |
1994年 | 3篇 |
1993年 | 2篇 |
1992年 | 6篇 |
1991年 | 1篇 |
1990年 | 2篇 |
1989年 | 1篇 |
1988年 | 1篇 |
1987年 | 2篇 |
1985年 | 2篇 |
1984年 | 1篇 |
1982年 | 1篇 |
1978年 | 1篇 |
排序方式: 共有599条查询结果,搜索用时 234 毫秒
1.
It is known that under resonance conditions, a group of strongly interacting bosonic atoms, trapped in a double-well potential, mimics a single particle, performing Rabi oscillations between the wells. By implication, all atoms need to tunnel at roughly the same time, even though the Bose–Hubbard Hamiltonian accounts only for one-atom-at-a-time transfers. The mechanism of this collective behavior is analyzed, the Rabi frequencies in the process are evaluated, and the limitation of this simple picture is discussed. In particular, it is shown that the small rapid oscillations superimposed on the slow Rabi cycle result from splitting the transferred cluster at the sudden onset of tunnelling, and disappear if tunnelling is turned on gradually. 相似文献
2.
This paper reports that the growth of RuOx(110) thin layer growth on Ru(0001)
has been investigated by means of scanning tunnelling microscope (STM). The STM
images showed a domain structure with three rotational domains of RuOx(110)
rotated by an angle of 120℃.
The as-grown RuOx(110) thin layer is expanded from the bulk-truncated
RuOx(110) due to the large mismatch between RuOx(110) and the
Ru(0001) substrate. The results also indicate that growth of RuOx(110)
thin layer on the Ru(0001) substrate by oxidation tends first to formation
of the Ru-O (oxygen) chains in the [001] direction of RuOx(110). 相似文献
3.
Vincent Maurice 《Surface science》2005,581(1):88-104
STM, STS, LEED and XPS data for crystalline θ-Al2O3 and non-crystalline Al2O3 ultra-thin films grown on NiAl(0 0 1) at 1025 K and exposed to water vapour at low pressure (1 × 10−7-1 × 10−5 mbar) and room temperature are reported. Water dissociation is observed at low pressure. This reactivity is assigned to the presence of a high density of coordinatively unsaturated cationic sites at the surface of the oxide film. The hydroxyl/hydroxide groups cannot be directly identify by their XPS binding energy, which is interpreted as resulting from the high BE positions of the oxide anions (O1s signal at 532.5-532.8 eV). However the XPS intensities give evidence of an uptake of oxygen accompanied by an increase of the surface coverage by Al3+ cations, and a decrease of the concentration in metallic Al at the alloy interface. A value of ∼2 for the oxygen to aluminium ions surface concentration ratio indicates the formation of an oxy-hydroxide (AlOxOHy with x + y ∼ 2) hydroxylation product. STM and LEED show the amorphisation and roughening of the oxide film. At P(H2O) = 1 × 10−7 mbar, only the surface of the oxide film is modified, with formation of nodules of ∼2 nm lateral size covering homogeneously the surface. STS shows that essentially the valence band is modified with an increase of the density of states at the band edge. With increasing pressure, hydroxylation is amplified, leading to an increased coverage of the alloy by oxy-hydroxide products and to the formation of larger nodules (∼7 nm) of amorphous oxy-hydroxide. Roughening and loss of the nanostructure indicate a propagation of the reaction that modifies the bulk structure of the oxide film. Amorphisation can be reverted to crystallization by annealing under UHV at 1025 K when the surface of the oxide film has been modified, but not when the bulk structure has been modified. 相似文献
4.
Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation. 相似文献
5.
Surface reconstructions of InGaAs alloys 总被引:1,自引:0,他引:1
The surface reconstructions of InxGa1−xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1−xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence. 相似文献
6.
通过对带有耦合器的单驻波腔进行等效电路分析,推导出可计算带有耦合波导的单谐振腔外部Q值的反射相位法,该方法通过计算不同频率的反射相位来确定谐振频率和外部Q值。详细叙述了在CST Microwave Studio中用谐振模式求解法、直接时域跟踪法和反射相位法进行计算的步骤;用这3种方法分别计算了二次发射微波电子枪的外部Q值并和实验测量结果做了比较。结果显示3种计算方法都有很高的精度,但反射相位法的速度最快,耗时1 071 s。计算发现外部Q值与耦合口长度的4.1次方成反比。 相似文献
7.
G. Michałek B.R. Bułka 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(1):121-128
The currents and their fluctuations in two capacitively coupled single electron transistors are determined in the limit of
sequential tunnelling. Our considerations are restricted to the case when the islands (dots) of the transistors are atomic-sized,
which means each of them has only one single electronic level available for the tunnelling processes. The Coulomb interactions
of accumulated charges on the both single electron transistors lead to the effect of the negative differential resistance.
An enhancement of the current shot-noise was also found. Spectral decomposition analysis indicated the two main contributions
to the shot-noise: low- and high-frequency fluctuations. It was found that the low frequency fluctuations (polarization noise)
are responsible for a strong enhancement of the current noise.
Received 9 October 2001 / Received in final form 8 March 2002 Published online 9 July 2002 相似文献
8.
Tunnelling in periodically driven bistable symmetric potential wells is investigated in an analytical approximation in a domain where the driving frequency is large compared to the tunnelling frequency and only the four lowest lying levels contribute significantly. The influence of finite level widths is taken into account, and a smooth variation of the amplitude of the driving field is allowed for. 相似文献
9.
InAs/GaSb/AlSb resonant tunneling spin device concepts 总被引:1,自引:0,他引:1
David Z. -Y. Ting Xavier Cartoix 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):350
We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined. 相似文献
10.
Hainer?Wackerbarth Rodolphe?Marie Mikala?Grubb Jingdong?Zhang Allan?G.?Hansen Ib?Chorkendorff Claus?B.?V.?Christensen Anja?Boisen Jens?UlstrupEmail author 《Journal of Solid State Electrochemistry》2004,8(7):474-481
We provide a comprehensive study of single- (ss) and double-strand (ds) oligonucleotides with either 25 or 10 bases or base pairs (bp) immobilized on polycrystalline and single-crystal Au(111) surfaces. The study is based on X-ray photoelectron spectroscopy, cyclic and differential pulse voltammetry, interfacial capacitance data, and electrochemical scanning tunnelling microscopy (in situ STM). The sequences used were the 25-bp sequence from the BRCA1 gene (25-mer), while the 10-bp oligonucleotides contained solely linear adenine and thymine sequences. The oligonucleotides were modified by the dimethoxytrityl group (DMT) via a disulfide group [DMT-S-S-ss25-mer and DMT-S-S-ds(AT)10], a pure disulfide group (A10-S-S-T10), or a thiol group [HS-ss25-mer and HS-ds-(AT)10], all via a hexamethylene linker. The overall pattern suggests strategies for controlled adsorption of DNA-based molecules and recognition of complementary strands or other molecules. 相似文献