Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.     

激光除冰研究

架空输送电线路因覆冰而导致的事故危害性很大,本文总结了目前国内外输电线路导线覆冰的现状。统计国内外探索出来的各种预防,融化,除冰等很多解决方案。通过研究和探讨,分析导线覆冰的传热和能量,运用了多种激光器进行激光熔(除)冰实验,比较研究二氧化碳激光器的除冰情况。以及提出激光熔冰的方法、研究方向和前景。     

Effect of the Parameters of Three-Mirror Resonators on the Spectral Characteristics of Single-Pulse Laser Generation with Self-Injection of Priming Radiation

Based on a semiclassical theory, investigations were made of the dynamics and spectral composition of pulsed generation with self-injection of priming radiation from the active part of a three-mirror linear resonator, the passive part of which contains an active loss modulator and serves as the output reflector of the laser. It is shown that there exists a range of resonator parameters at which pulsed lasing has virtually a single frequency irrespective of the detuning of the frequencies of the priming radiation and of the nearest eigenmode of the composite resonator. Considering graphically the phase conditions of generation, it is established that among pulsed lasers with self-injection of priming radiation which are constructed on the basis of three-mirror linear and branched resonators, the most efficient for creating single-frequency generation are those in which the length of the main resonator, where generation of the pulse occurs, is larger than the length of the additional one intended for forming the priming radiation. With an inverse ratio of the lengths of the resonators, the conditions of single-frequency pulsed generation becomes dependent on the priming radiation frequency.     

Diode-pumped 671 nm laser frequency doubled by CPM LBO

A design of diode-pumped high-efficiency Nd:YVO₄/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM₀₀ mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively.     

一种可能的简并谱NNS分布

利用随机矩阵理论,通过对一特殊情形的简并谱展开研究,得到了简并谱一种可能的最小相邻间距NNS分布函数．研究表明,由于简并的存在,简并谱不仅可分解成随机谱和规则谱两个子谱,同时还影响其规则谱,使规则谱的能级斥力减少．     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Laser induced copper electroless plating on polyimide with Q-switch Nd:YAG laser

The results of laser induced deposition of copper on polyimide substrate from copper electrolyte solution are reported. Unlike most work reported in the literatures where CW Ar⁺ lasers were used, a second harmonic (532 nm wavelength) Q-switch Nd:YAG laser was used for our experiments. The deposition process was conducted by laser-catalyzing of the polyimide surface and subsequent photothermal-accelerated reduction of copper-complex ions in an alkaline reducing environment. The characteristics of the deposited copper line were investigated in terms of laser beam scanning speed, and the number of scans. The surface morphology and chemical composition of the deposited copper were analyzed using field emission scanning electron microscope (FESEM) and energy dispersive spectrometer (EDX). The optimum processing conditions have been identified. The copper deposit was found to adhere well to the substrate.     

Polytetrafluoroethylene and metal structure convective-flow CO laser

A convective flow CO laser composed of polytetrafluoroethylene discharge tubes, nickel–chromium steel components, a cupric heat exchanger and other components is described. Operating in liquid nitrogen condition, output power of 60 W has been obtained from a non-selective cavity.