差分输入双积分电路在热电阻测温中的应用

针对常规分立双积分AD只能处理单端信号的问题,给出了一种输入和基准电压均支持差分信号的分立差分双积分AD。在热电阻测量中,把热电阻和基准电阻串联同一回路,以基准电阻压降作为基准,对热电阻的压降进行测量,并从软硬件两个方面对常见的误差因素进行对消处理。实验表明,该电路用于PT100测温时,跳字不超过0.1℃,精度可以达到±0.1℃,且对运放型号无特殊要求,是一种低成本、高精度的温度测量方案。     

基于RTD和HEMT的D触发器设计

共振隧穿二极管(RTD)作为一种新的量子器件和纳米电子器件,具有负内阻、电路功耗低、工作频率高、双稳态和自锁等特性,可突破CMOS工艺尺寸的物理极限,在数字集成电路领域有更为广阔的发展空间.针对RTD的特性,采用3个RTD串联的单双稳态转换逻辑单元(MOBILE)和类SR锁存器,设计了基于RTD和HEMT(高电子迁移率晶体管)的D触发器.较于其他研究的D触发器,该D触发器能有效降低电路的器件数量和复杂度,且能抗S、R信号的延时差异干扰,具有更稳健的输出.     

基于RTD可编程逻辑门的n变量函数实现算法

共振隧穿二极管（RTD）可编程逻辑门是一种由单双稳态转换逻辑单元（MOBILE）及正、负输入分支组成的阈值逻辑电路。基于二进制神经元模型中的三层网络结构,提出了基于RTD可编程逻辑门的n变量函数实现算法。按照汉明距离由大到小的顺序,搜索最优输入向量,用定理1或定理2方法产生隐层函数,通过变换次数,确定输入向量的真假及隐层函数的权重。由于定义了最优输入向量及变换次数,提高了算法的准确性;又由于采用了定理2方法,令设计的电路更简单。     

A novel micro accelerometer with adjustable sensitivity based on resonant tunneling diodes

Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current--voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In_0.1Ga_0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.     

有机分子共振隧穿二极管

介绍了共振隧穿二极管(RTD)和有机分子共振隧穿二极管的结构、功能及工作原理，并对有机分子RTD的研究进展作了概述。     

基于开关序列的RTD多值反相器设计

共振隧穿二极管(Resonant Tunneling Diode-RTD)本身所具有的负阻抗(Negative Differential Resistance-NDR)特性使其成为天然的多值器件.本文描述了RTD以及三端共振隧穿(Resonant Tunneting-RT)器件的伏安特性,介绍了元件用PSPICE软件的模拟方法,并以开关序列原理为指导思想设计出更为简洁的三值、四值反相器电路.设计出的电路具有低功耗和高速的特点,适合作为超高速大规模数字集成电路中的单元电路.     

Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes

We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GaP, or GaAs_xP_1−x. n-Type tunnelling diodes have been fabricated and the symmetry in the current–voltage (I–V) characteristics, as well as the peak-to-valley ratios, are found to be sensitive probes for the interface quality in the heterostructures. For GaInP RTDs, we show that the introduction of GaP intermediate layers is crucial for the realisation of a useful tunnelling current. RTDs including thin barriers (less than about 10 monolayers (ML)) of GaP are realised, but the strong mismatch between the materials limit the useful thickness. Finally, RTDs with GaAs_xP_1−x alloys are fabricated showing the best peak-to-valley ratio of the diodes (about 5), as well as a symmetric I–V characteristics. The electrical data are further compared to studies by transmission electron microscopy (TEM) in the various material systems.     

基于AlGaN/GaN共振隧穿二极管的退化现象的研究

文章研究了GaN基共振隧穿二极管 (RTD) 的退化现象. 通过向AlGaN/GaN/AlGaN量子阱中引入三个实测的深能级陷阱中心并自洽求解薛定谔方程和泊松方程, 计算并且讨论了陷阱中心对GaN基RTD的影响. 结果表明, GaN基RTD的退化现象是由陷阱中心的缺陷密度和激活能的共同作用引起. 由于陷阱中心的电离率和激活能的指数呈正相关关系, 因此具有高激活能的陷阱中心俘获更多电子, 对负微分电阻 (NDR) 特性的退化起主导作用. 关键词： 共振隧穿二极管 GaN 陷阱中心 电离率     

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An Al_0.24Ga_0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.     

基于RTD可编程逻辑门的数字电路3层网络综合算法

随着集成电路的不断发展,CMOS器件的工艺逐渐达到其物理设计极限,研究新器件和新设计方法成为集成电路继续发展的必经之路. 阈值逻辑门因具有强大的逻辑功能而备受关注,共振隧穿二极管（RTD）因其负阻特性在设计阈值逻辑门时更具优势. 由于阈值逻辑门与二进制神经元模型有相似之处,因此可用神经网络模型实现逻辑函数,从而为电路设计提供新的思路. 对基于RTD可编程逻辑门的3层网络算法中的隐层综合算法进行了改进,提出采用汉明距离最大优先覆盖的方法对真向量进行覆盖,从而提高了真向量的覆盖效率,减少了隐层函数个数,并采用真假向量标记的方法简化了隐层综合算法.提出的算法比原隐层综合算法简单,进一步简化了基于RTD可编程逻辑门实现n变量函数的电路.