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1.
纳米SiC蓝光发射的研究 总被引:4,自引:0,他引:4
在4.68eV的激光激发下,室温CVD合成的纳米SiC粉体,可发射475nm的蓝光,经600~1100℃在N2气氛下进行快速退火(RTA)处理,其荧光强度随退火温度升高而增强,当T≥900℃时,荧光强度下降,但发光峰位与退火温度无关.通过XRD、IR、TEM、XPS等研究,认为纳米SiC中与氧有关的缺陷可能是引起475nm蓝光发射的主要原因 相似文献
2.
Hong-li GuoGuo Liu Xue-dong LiHai-min Li Wan-li ZhangJian-guo Zhu Ding-quan Xiao 《Applied Surface Science》2011,257(15):6573-6576
The multiferroic (PMN-PT/CFO)n (n = 1,2) multilayered thin films have been prepared on SiO2/Si(1 0 0) substrate with LNO as buffer layer via a rf magnetron sputtering method. The structure and surface morphology of multilayered thin films were determined by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. The smooth, dense and crack-free surface shows the excellent crystal quality with root-mean-square (RMS) roughness only 2.9 nm, and average grain size of CFO thin films on the surface is about 44 nm. The influence of the thin films thickness size, periodicity n and crystallite orientation on their properties including ferroelectric, ferromagnetic properties in the (PMN-PT/CFO)n multilayered thin films were investigated. For multilayered thin films with n = 1 and n = 2, the remanent polarization Pr are 17.9 μC/cm2 and 9.9 μC/cm2; the coercivity Hc are 1044 Oe and 660 Oe, respectively. In addition, the relative mechanism are also discussed. 相似文献
3.
Jen-Hwan Tsai 《Journal of luminescence》2010,130(10):1680-1686
In this paper, a shift in the photoluminescence (PL) peak from blue to near-infrared region was observed in the Si+-implanted 400-nm-thick SiO2 films with the rapid thermal annealing (RTA) method only. As the Si+-fluence was 1×1016 ions/cm2, a blue band was observed in the films after RTA at 1050 °C for 5 s in dry-N2 atmosphere; then, the band shifted from blue to orange upon increasing the holding temperature of RTA to 1250 °C in the films after the isochronal RTA in dry N2. Furthermore, while the fluence was increased to 3×11016 ions/cm2 and the holding temperature was at the same range between 1050 and 1250 °C, the PL peak occurred between red and near-infrared regions. Although the RTA and conventional thermal annealing (CTA) methods produce a similar mechanism, the CTA method needs a much longer annealing-time and a higher Si+-implanted dose than the RTA method for producing the same shift and intensity of PL peak from the as-implanted sample. Therefore, the RTA method can produce the mechanism in the Si+-implanted sample with the PL energy between blue and near-infrared band in place of the CTA method. 相似文献
4.
5.
T. Boudiar C.S. Sandu B. Canut M.G. Blanchin V.S. Teodorescu J.A. Roger 《Journal of Sol-Gel Science and Technology》2003,26(1-3):1067-1070
Transparent Conducting Oxide (TCO) films of Sb doped SnO2 have been successfully elaborated by us using the Sol-Gel Dip Coating (SGDC) technique. Good conductive and optical properties of such films depend on the densification and crystallisation of the SGDC deposits, which can be achieved by classical thermal procedures but such procedures are time consuming in case of multilayered films. Here are presented results of Rapid Thermal Annealing (RTA) of these films, which lead to good conductive properties even in the case of monolayered films. 相似文献
6.
本文利用快速退火对 8″直拉硅单晶片中的流动图形缺陷(FPDs)进行了研究.首先用Secco腐蚀液腐蚀了大直径直拉硅片,利用光学显微镜观察了FPDs的宏观分布,并用原子力显微镜(AFM)对原生FPDs的微观形貌进行观察,证明了 FPDs是一种空位型原生缺陷,然后采用了高温快速热处理,分别在N2、N2/O2(3;)、Ar三种气氛中对原生直拉单晶硅片进行了处理.对比退火前后FPDs密度的变化,分析了高温快速热处理对直拉硅单晶片中FPDs的影响,实验表明1200℃快速热处理180s可以显著降低硅片表面的FPDs. 相似文献
7.
Xiangqin Meng Chengtao Yang Wujun Fu Quntiao Xie Qingqing Chen 《Surface and interface analysis : SIA》2013,45(2):672-676
Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
8.
富硅氮化硅薄膜的荧光发射 总被引:2,自引:0,他引:2
室温下在3.45eV的激光激发下,对950℃温度下淀积的LPCVD富硅的SiNx薄膜中,观测到5个高强度的可见荧光的发射。其峰位位置分别为2.7,2.69,2.4,2.3,2.1eV。通过TEM、IR、XPS等的分析研究表明,该样品为纳米硅镶嵌结构的a-SiNx:H复合膜,分析了其微结构的成因及其与膜内应力之间的相互关系。经过1000~1200℃快速退火(RTA)处理,原PL谱蓝移并只出现了峰位为3.0,2.8eV的两个紫蓝色荧光的发射,用能隙态模型对此结果做了初步的分析和讨论。认为薄膜中纳米硅团簇的密度、尺寸的变化和亚稳态缺陷态对其PL峰以及膜应力起着十分重要的作用。 相似文献
9.
非晶Ni-Al阻挡层对快速退火制备的硅基Ba0.6Sr0.4TiO3薄膜结构及物性影响的研究 总被引:1,自引:1,他引:0
应用非晶Ni-Al薄膜作为扩散阻挡层,采用磁控溅射法和溶胶-凝胶法在Pt/TiO2/SiO2/Si(001)衬底上制备了Pt/Ni-Al/Ba0.6Sr0.4TiO3/Ni-Al/Pt电容器结构,研究了在650~800 ℃温度范围内快速退火(RTA)工艺对电容器结构和物理性能的影响.结果表明:在外加电场为-100 kV/cm时,700 ℃和750 ℃退火样品的介电常数达到最大,分别为150和170.非晶Ni-Al薄膜的应用可以有效地降低BST薄膜的漏电流密度.650 ℃退火样品在整个测试电场范围内满足欧姆导电机制;700 ℃、750 ℃和800 ℃退火样品分别在电压低于-3.67 V、-2.65 V和-2.14 V时满足欧姆导电机制,在电压高于-3.67 V、-2.65 V和-2.14 V时满足普尔-弗兰克导电机制. 相似文献
10.
对大直径重掺锑硅单晶中流动图形缺陷(FPDs)进行了研究.利用高温快速退火工艺(RTA) ,将重掺锑硅片在N2,Ar,H2三种不同气氛下进行热处理,对退 火前后FPDs的密度变化进行了研究,分析了重掺锑硅单晶中FPDs在不同高温RTA过程中的热 稳定性.并从重掺杂原子锑与间隙氧之间的关系,分析了重掺锑硅片中FPDs在高温快速退火 工艺下的消除机制,认为重掺锑硅单晶中大量的锑原子,影响了硅片中间隙氧的浓度分布, 进而影响了原生微缺陷的形成及热行为.
关键词:
重掺锑硅单晶
快速退火(RTA)
流动图形缺陷(FPDs)
空洞缺陷 相似文献