Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.     

基底温度对α-C:H膜微观结构的影响

使用RF-PECVD法分别在基底温度为60℃、120℃和200℃的N型单晶锗表面制备了α-C:H膜,采用拉曼光谱、傅里叶变换红外吸收光谱和原子力显微镜等技术手段研究分析了α-C:H膜的价键组成及表面形貌,讨论了基底温度对α-C:H膜微结构及部分性能的影响。结果表明,在α-C:H膜沉积过程中,基底温度对膜层微观结构有较大影响,基底温度60℃时,膜层表面光滑、致密无石墨化现象。随着基底温度的升高,α-C:H膜中含H量和微晶石墨量逐渐增多,α-C:H膜层性能也逐步退化。     

采用高压RF-PECVD法制备高电导、高晶化率的p型微晶硅材料

本文报道了采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法制备高电导、高晶化率的p型微晶硅材料的结果.重点研究了反应压力和辉光功率对p型微晶硅材料结构和电学特性的影响.通过沉积参数的优化,在很薄的厚度(33nm)时,材料的暗电导率依然达到1.81S/cm,激活能达25meV,晶化率为57;.文中还对高压RF-PECVD能够制备p型微晶硅材料的生长机理和高电导机理进行了分析.     

掺硼p型非晶硅薄膜的制备及光学性能的表征

以高氢稀释的硅烷(SiH₄ )为反应气体,硼烷(B₂H₆)为掺杂气体,利用RF-PECVD方法,在玻璃衬底上制备出掺硼的氢化非晶硅(a-Si:H)薄膜,研究了硼掺杂量对氢化非晶硅(a-Si:H)薄膜的光学性能的影响.利用NKD-7000 W光学薄膜分析系统测试薄膜的透射谱和反射谱,并利用该系统的软件拟合得出薄膜的折射率、消光系数、吸收系数等光学性能参数,利用Tauc法计算掺硼的非晶硅薄膜的光学带隙.实验结果表明,随着硼掺杂量的增加,掺杂非晶硅薄膜样品在同一波长处的折射率先增大后减小,而且每一样品均随着入射光波长的增加而减小,在波长500 nm处的折射率均达到4.3以上;薄膜的消光系数和吸收系数随着硼掺杂量的增大而增大,在500 nm处的吸收系数可高达1.5×10⁵cm^-1.在实验的硼掺杂范围内,光学带隙从1.81 eV变化到1.71 eV.     

Two types of carbon nanocomposites: Graphite encapsulated iron nanoparticles and thin carbon nanotubes supported on thick carbon nanotubes, synthesized using PECVD

In this work, graphite encapsulated Fe nanoparticles and thin carbon nanotubes (CNTs) supported on the pristine CNTs, respectively, were synthesized using plasma enhanced chemical vapor deposition via efficiently controlling the flow rate of discharging CH₄ and H₂ gas. The properties of the obtained hybrid materials were characterized with superconducting quantum interference and field emission measurements. The results showed that the encapsulated Fe nanoparticles had diameters ranging from 1 to 30 nm, and this hybrid nanocomposite exhibited a ferromagnetic behavior at room temperature. Thin CNTs with an average diameter of 6 nm were attached to the surface of the prepared CNTs, which exhibited a lower turn-on field and higher emission current density than the pristine CNTs. The Fe nanoparticles either encapsulated with graphite or used as catalyst for thin CNTs growth were all originated from the pyrolysis of ferrocene.     

Polymeric like carbon films prepared from liquid gas and the effect of nitrogen

Polymeric like carbon (PLC) films are grown by a capacitance coupled RF-PECVD on the grounded electrode at room temperature from liquid gas (40% propane and 60% butane) in two regimes with nitrogen and without nitrogen gas. Films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Fourier transform infrared (FTIR) absorption and Raman spectroscopy. The result of FTIR analyses indicates that more than 90% of hydrogen atoms are bonded to carbon with sp³ hybridization. The abundance of CH₃ is more than that of CH₂ and this one is more than that of CH for carbon with sp³ hybridization in these films. The C 1s line of the XPS spectra is deconvoluted to several peaks that are attributed to the CH₃, CH₂ and CH terminations. The result of this deconvolution is consistent with FTIR results. AFM images show that the mean nanoparticle size is reduced from about 100 nm for films without nitrogen to less than 80 nm for films with nitrogen. This is in agreement with our Raman results. By addition of nitrogen to the feed gas, no variation in the C-H stretching vibration mode is observed. The effect of N-H bonds is observable in both FTIR and XPS spectra and a very small trace of N-C bonds is present only in deconvolution of N 1s line of XPS spectra. These results indicate that by addition of nitrogen to feed gas, internal structure of a-C:H nanoparticles is not changed but particle size is decreased. We suggest that the internal stress reduction due to nitrogen addition in the feed gas for PLC films can be related to decreasing of the a-C:H particle size.     

射频等离子体增强化学气相沉积SiNx薄膜的研究

采用射频等离子体增强化学气相沉积技术,以N2和SiH4作为反应气体,在P型硅基片上进行SiNx薄膜的沉积.使用椭偏仪对薄膜厚度和光学常量进行了测量, 用傅里叶变换红外光谱仪对SiNx薄膜的化学键合结构进行了分析.研究了基片温度、射频功率以及N2和SiH4的气体流量比率等实验工艺参量对薄膜沉积速率和光学常量的影响.结果表明,射频等离子体增强化学气相沉积技术沉积的SiNx薄膜是低含氢量的SiNx薄膜,折射率在1.65~2.15之间,消光系数k在0.2~0.007之间,当SiNx薄膜为富氮时k≤0.01,最高沉积速率高达6.0 nm/min,N2和SiH4气体流量比率等于10是富硅和富氮SiNx薄膜的分界点.     

非晶空心碳球的制备及生长机制

采用射频等离子体增强化学气相沉积技术,在CH4/H2的气氛中合成了非晶空心碳球.利用SEM,TEM,拉曼光谱对样品的形貌、成分和结构进行了表征.非晶空心碳球的直径在100～800nm之间,分布在弯曲的碳纳米管丛中.非晶空心碳球的生长机制可能为膨胀生长.     

RF-PECVD掺溴非晶碳氢膜的Raman光谱分析

在室温条件下,以溴乙烷为单体、氢气为载气,用13.56 MHz射频等离子体化学气相淀积方法(RF-PECVD)在硅片衬底上生长了掺溴非晶碳氢薄膜(a-C:Br:H).通过对其进行Raman光谱分析,研究了工作气压对薄膜结构的影响.结果显示:随着气体工作压力从20 Pa下降至5 Pa,样品D峰强度增强,I_D/I_G值逐步由1.18增加至1.36,G峰的位置向高频轻微移动;与此同时,薄膜生长方式逐步转为低能态形式生长,薄膜中sp~2C逐步由链式结构向环式结构转化.     

Surface and electrical properties of organic-inorganic hybrid structure as gate insulator to organic thin film transistor

Carbon-based OTFT devices were fabricated using a plasma process for the gate electrode and gate insulators. A nanocrystalline carbon (nc-C) film was used as the gate electrode, and three different layers, cyclohexene, diamond-like carbon (DLC), and cyclohexene/DLC (hybrid insulator), were used as the gate insulator. The surface and electrical properties of the three different gate insulators on the nc-C gate electrode were investigated using the SPM method, and the leakage current density and dielectric constant of the metal-insulator-metal (MIM) structures with three different insulator layers were evaluated. The hybrid insulator layer had a very smooth surface, approximately 0.2 nm, a uniform surface without defects, and good adhesion between the layers. Overall, it is believed that the hybrid insulator lead to a decrease in the electrical leakage current and an improvement in the device performance.