Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

Synthesis of Dimethyl Carbonate from CO2 , Methanol, and Epoxides Using Re（CO） 5 Cl/K2 CO3 as Catalyst System

IntroductionOver the past few years, dimethyl carbonate(DMC) has been proven to be an efficientmethylating,methoxylating, and methoxycarbonylating agent inorganic syntheses, in which DMC is used to replace thetoxic methyl halides, dimethyl sulfate or carb     

The Transport Properties of the Cell Membrane Ion Channels in Electric Fields: Bethe Lattice Treatment

The interactive two-state model of cell membrane ion channels in an electric field is formulated on the Bethe lattice by means of the exact recursion relations. The probability of channel opening or maximum fractions of open potassium and sodium channels are obtained by solving a non-linear algebraic equation. Using known parameters for the conventional mean-field theory the model gives a good agreement with the experiment both at low and high trans-membrane potential values. For intermediate voltages, the numerical results imply that collective effects are introduced by trans-membrane voltage.     

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E_g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E_g1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time.     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

催化动力学光度法测定痕量钴(Ⅱ)

本法基于钴 (Ⅱ )对高碘酸钾氧化孔雀绿的催化作用 ,提出一种灵敏地测定痕量钴 (Ⅱ )的新方法。该方法线性范围在 0～ 0 8μg·2 5mL- 1 ,检测限为 2 1× 10 - 1 0 g·mL- 1 。测定出反应表现活化能Ea=37 94kJ·mol- 1 。此法用于茶叶、维生素B1 2 中钴的测定 ,结果满意     

Zur Synthese und Struktur von K3N

Synthesis and Structure of K₃N Two phases in the binary system K/N have been obtained via co‐deposition of potassium and nitrogen onto polished sapphire at 77 K and subsequent heating to room temperature. The powder diffraction pattern of one of these phases can be satisfactorily interpreted by assuming the composition K₃N, and the anti‐TiI₃ structure‐type, which is also adopted by Cs₃O. The resulting hexagonal lattice constants are: a = 779.8(2), c = 759.2(9) pm, Z = 2, P6₃/mcm. Comparison with possible structures of K₃N generated by computational methods and refined at Hartree‐Fock‐ and DFT level, reveals that the energetically most favoured structure has not formed (presumable Li₃P‐type), but instead one of those with very low density. In this respect, the findings for K₃N are analogous to the results on Na₃N. The thermal evolution of the deposited starting mixture has been investigated. Hexagonal K₃N transforms to another K/N phase at 233 K. Its XRD can be fully indexed resulting in an orthorhombic cell a = 1163, b = 596, c = 718 pm. Decomposition leaving elemental potassium as the only residue occurs at 263 K.     

多巴酚丁胺的流动注射化学发光法测定

在盐酸介质中 ,高锰酸钾可氧化多巴酚丁胺产生化学发光 ,甲醛对该反应有较强的增敏作用 ,据此 ,建立了流动注射化学发光法测定多巴酚丁胺的方法 ;方法的线性范围为0.1～100mg·L -1,检出限为0.07mg·L -1 ,相对标准偏差为1.2 %(n=11,ρ=1.0mg·L -1) ;该法用于药物中多巴酚丁胺含量的测定 ,结果令人满意。     

K＋－SrO－La_2O_3／ZnO催化剂上甲烷氧化偶联反应Ⅰ．催化活性和反应气中添加CO_2的影响

Ｋ＋┐ＳｒＯ┐Ｌａ２Ｏ３／ＺｎＯ催化剂上甲烷氧化偶联反应＊Ⅰ．催化活性和反应气中添加ＣＯ２的影响余林徐奕德＊＊郭燮贤（中国科学院大连化学物理研究所催化基础国家重点实验室，大连１１６０２３）关键词钾离子，氧化锶，氧化镧，氧化锌，金属氧化物催化剂，甲烷，...