High-Density Excitons in a Diluted Magnetic Semiconductor: Cd 1 − x Mn x Te

Time-resolved magneto photoluminescence in a diluted magnetic semiconductor Cd 0.9 Mn 0.1 Te has been carried out with varying exciton density from 10 14 to 10 19 cm m 3 . The reduction of the Zeeman shift and that of the magnetic polaron energy was found under strong photoexcitation. The spectral feature is interpreted in terms of the heating of the manganese spin subsystem. Polarization dependence of the spin heating is observed for the first time, revealing the contribution of the spin flip between excitons and magnetic ions to the heating process.     

Influence of the image charge effect on the hydrogen-like impurity-bound polaron in a spherical quantum dot in the presence of an electric field

We have investigated the influence of an external electric field on the binding energies and polaronic shifts of the ground and some first few excited states of a hydrogenic impurity in a spherical quantum dot by taking into account the image charge effect. By using Landau–Pekar variational method the general analytical expression is obtained for the impurity bound-polaron energies. It has been numerically identified the conditions (electric field, nominal radius of quantum dot, etc.) in which the bound-polaron states can be existence in GaAs quantum dot. We have shown that the polaronic shifts in the binding energy of 1s-like state are the same in cases with and without image charge effect while they for 2s-like state are not coincide and have different monotonic behavior versus confinement potential. Electron–phonon interaction lifts the degeneracy of the 2px-, 2py-, and 2pz-like states of a donor impurity and reduces their binding energies.     

The Photophysics of Thin Polymer Films of Poly-(meta-phenylene-co-2,5-dioctoxy-para-phenylenevinylene)

Summary.  We have investigated the effect of film preparation procedures on the photoluminescence efficiency of the luminescent co-polymer poly-(m-phenylene-co-2,5-dioctoxy-p-phenylenevinylene) (PmPV). The photoluminescence efficiency of PmPV films improved by up to 50% when the solution was degassed by bubbling argon gas through it prior to spin casting in an inert atmosphere and baking under vacuum. Photoinduced absorption and doping measurements show that this preparation method reduces polaron photogeneration, which reduces the photoluminescence (PL) yield through exciton quenching and excited state absorption. It is proposed that this sample preparation method increases interchain separation, reducing the formation of polarons and non-radiative quenching routes, thus resulting in increased PL efficiency. Received June 23, 2000. Accepted (revised) August 3, 2000     

基态非简并聚合物中的极化子和双极化子的动力学(Ⅰ)--弱电场下研究

文中模拟了在基态非简并聚合物中的极化子和双极化子在弱电场中的运动,研究了在不同简并参数的系统中极化子和双极化子的动力学稳定性,发现在同一个系统中,双极化子比极化子的运动速度慢,晶格振荡小; 在简并参数大的系统中,极化子和双极化子的运动速度都变慢.极化子和双极化子在弱电场下都存在饱和速度,达到饱和速度后, 电场的能量发生了转换.     

The impedance function of a confined polaron and bipolaron: The single-path-integral approach

We use the single-path-integral to calculate the impedance function of the polaron and bipolaron in quantum confinement with the presence of the external fields. The expectation values of the classical equation of motion is considered in order to obtain the impedance function. The mobility of the polaron and bipolaron in quantum confinement is also calculated in the direction parallel and perpendicular to the magnetic field. Without trapping, we also calculate the effective mass of the bipolaron in the magnetic field.     

Raman spectra of carriers in ionic-liquid-gated transistors fabricated with poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene)

We observed the Raman spectra of carriers, positive polarons and bipolarons, generated in a poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) film by FeCl₃ vapor doping. Electrical conductivity and Raman measurements indicate that the dominant carriers in the conducting state were bipolarons. We identified positive polarons and bipolarons generated in an ionic-liquid-gated transistor (ILGT) fabricated with PBTTT-C14 as an active semiconductor and an ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide [BMIM][TFSI] as a gate dielectric using Raman spectroscopy. The relationship between the source−drain current (I_D) at a constant source−drain voltage (V_D) and the gate voltage (V_G) was measured. I_D increased above −V_G = 1.1 V and showed a maximum at −V_G = 2.0 V. Positive polarons were formed at the initial stage of electrochemical doping (−V_G = 0.8 V). As I_D increased, positive bipolarons were formed. Above V_G = −2.0 V, bipolarons were dominant. The charge density (n), the doping level (x), and the mobility of the bipolarons were calculated from the electrochemical measurements. The highest mobility (μ) of bipolarons was 0.72 cm² V⁻¹ s⁻¹ at x = 110 mol%/repeating unit (−V_G = 2.0 V), whereas the highest μ of polarons was 4.6 × 10⁻⁴ cm² V⁻¹ s⁻¹ at x = 10 mol%.     

Polaron with at most one phonon in the weak coupling limit

We introduce the polaron model with at most one phonon from the H. Fröhlich polaron Hamiltonian by eliminating contributions from more than two phonons. Spectral properties of this 0,1-phonon polaron model are investigated. It is clarified that, in the weak coupling region, the lowest energy and the effective mass obtained from the 0,1-phonon polaron model agree with those of the H. Fröhlich polaron Hamiltonian.     

Polaron effect dependence of thermopower in organic semiconductors

A unified physical model for thermopower was presented in organic semiconductors, based on the Marcus theory and variable-range hopping theory. According to the proposed model, the characteristic of charge carrier thermoelectric transport in organic semiconductors has been investigated. In particular, polaron effects, energetic disorder, and carrier density dependence of the thermopower have been discussed in detailed. The calculation also shows a good agreement with the experimental data in organic semiconductors.     

Pressure-dependent dynamical properties of Zn-based II–VI semiconductors

The effect of pressure on optical phonons and polaron properties in ZnS, ZnSe, and ZnTe II–VI compound semiconductors has been investigated. The calculations are performed in the framework of ab initio pseudopotential approach based on the density functional perturbation theory. At zero pressure, a reasonable degree of agreement is generally found between our results and data available in the literature. It is found that when pressure is increased the phonon modes at Г in the Brillouin zone are shifted towards high energies. The pressure dependence of features such as Fröhlich coupling parameter, the Debye temperature of the longitudinal optical phonon frequency and the polaron effective mass showed that the polaron properties are sensitive to the pressure effect.