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1.
We present a detailed experimental study aimed at demonstrating the polariton nature of the photoluminescence emission in a bulk GaN microcavity grown on (111) silicon. The comparison of the photoluminescence with coincident reflectivity measurements at different temperatures shows an anticrossing behaviour with a Rabi splitting of the order of 35 meV up to room temperature. Relevant confirmations of the mixing between excitons and photons are found in the analysis of the spectral linewidth and of the time resolved kinetics.  相似文献   
2.
We have demonstrated theoretically that it is possible to use the resonant coupling of exciton-polaritons in a planar microcavity and Tamm plasmons at a metal film on the surface of the structure to provide lateral spatial control of the exciton-polaritons within the cavity. The resonant coupling of the Tamm plasmons to cavity exciton-polaritons results in a triplet of hybrid plasmon–exciton-polariton modes with the lowest at a significantly lower energy than that of the unperturbed exciton-polaritons. Further, a patterned metal film on the structure surface can provide a sufficiently large lateral modulation of the excitation energy that localization of the exciton-polaritons within chosen regions of the cavity is possible. We show how the approach opens the way to a practical demonstration of polariton channels, traps, and devices, including logic gates.  相似文献   
3.
程光煦 《物理学进展》2011,23(1):82-124
在给出介质中的光 (电磁 )波与极化波混合作用而得出的极化激元方程、极化激元色散方程之后又讨论了相应的物理意义及相关的物理问题 ;获得极化激元的实验方法 ,接着还介绍和讨论了极化激元的拉曼散射。  相似文献   
4.
Polariton linewidths have been measured in a series of microcavities with different excitonic and cavity inhomogeneous broadening in the weak-disorder regime. We show experimentally that the behaviour of the polariton linewidths as a function of the detuning depends on the asymmetric line shape of an inhomogeneously broadened exciton line and particularly the disorder effect can be modulated and cancelled around resonance. When the disorder contribution is minimal, the behaviour of the cavity polariton linewidths tends to one of the homogeneous broadening system.  相似文献   
5.
6.
We theoretically discuss scattering of polaritons in semiconductor microcavities by means of a microscopic model. Taking into account the composite character of excitons (formed by an electron and a hole), we analyze the relation between polarizations of incoming and outgoing polariton states under resonant excitation by linearly polarized laser beams with opposite in-plane momenta. In addition to these polarization selection rules, we investigate the nonlinear processes up to the sixth order and we show the origin of an induced anisotropy due to the excitation beams which is responsible for the operation of an optical gate based on polariton–polariton scattering in a microcavity.  相似文献   
7.
The beats of the Stokes luminescence parameters in pillar semiconductor microcavities are theoretically analysed. The beats are originated by a slight in-plane anisotropy of the pillar. The influence of the coherence time of exciton polaritons on the decay rate of polarization oscillations of the emission of light by the cavity is revealed. This link is essential for studies of the dynamic properties of polariton condensates in pillar microcavities.  相似文献   
8.
We report on the first experimental observation of Tamm plasmon-polaritons (TPP) formed at the interface between a metal and a dielectric Bragg reflector (DBR). Contrary to conventional surface plasmons, TPPs have an in-plane wave vector less than the wave vector of light in vacuum, which allows for their direct optical excitation, and can be formed in both the TE and TM polarizations. The angular resolved reflectivity and transmission spectra of a GaAs/AlAs DBR covered by Au films of various thicknesses show the resonances associated with the TPP at low temperatures and at room temperature. The in-plane dispersion of TTPs is parabolic with an effective mass 4×10−54×105 of the free electron mass.  相似文献   
9.
We demonstrate a remarkable thickness dependence of nonlinear optical response of exciton–polaritons in GaAs thin films by degenerate four-wave mixing (DFWM) at low temperature (T=5 K). High-quality samples of layer thickness from 80 to 200 nm were grown by molecular beam epitaxy. Confined mode of the exciton–polariton dominantly contributed to the reflection spectra, which were examined by the calculation using a transfer matrix method. The DFWM intensity at exciton resonance was enhanced at a particular thickness (110 nm). This thickness dependence is in good agreement with the nonlocal theory, which shows a remarkable size dependence of the internal field relevant to the confined mode of the exciton–polaritons.  相似文献   
10.
We extend our recent results [O.A. Egorov et al. Phys. Rev. Lett. 102, 153904 (2009)] on half-light–half-matter polariton solitons in planar semiconductor microcavities operating in the strong coupling regime. We initiate discussion on the structure of the solitons in the momentum space and its link to the instability of the upper branch of the polariton bistability loop. Numerical results showing the soliton excitation by a seed pulse are presented.  相似文献   
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