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1.
In view of immense importance of silylenes and the fact that their properties undergo significant changes on substitution with halogens, here, we have used B3LYP/6-311++G** level of theory to access the effects of 1–4 halogens (X = F, Cl, Br, and I) on four unprecedented sets of cyclopentasilylene-2,4-dienes; with the following formulas: SiC4H3X ( 1 X ), SiC4H2X2 ( 2 X ), SiC4HX3 ( 3 X ), and SiC4X4 ( 4 X ). In going down from F to I, the singlet (s)-triplet (t) energy gap (ΔEs-t, a possible indication of stability), and band gap (ΔEH-L) decrease while nucleophilicity (N), chemical potential (μ), and proton affinity (PA) increase. The overall order of N, μ, and PA for each X is 2 X > 1 X > 3 X > 4 X . Precedence of 2 X over 1 X is attributed to the symmetric cross conjugation in the former. The highest and lowest N are shown by 2 I and 4 F . The trend of divalent angle () for each X is 4 X > 1 X > 3 X > 2 X . The results show that in going from electron withdrawing groups (EWGs) to electron donating groups (EDGs), the ΔEs-t and ΔEH-L decrease while N, μ, and PA increase. Also, rather high N of our scrutinized silylenes may suggest new promising ligands in organometallic chemistry. 相似文献
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采用交流法测量大功率商用钛酸钡(BT)陶瓷加热器的电阻和加热功率随温度的变化关系.结果显示,BT陶瓷的电导特性在80℃附近出现了明显的转变,从低温时的极化子跳跃导电转变为高温时的能带导电,此时,电阻出现极小值,而加热功率出现极大值. 相似文献
4.
In this work, the beam splitter with two input ports and two output ports in two-dimensional photonic crystals is studied through the finite-difference time-domain method. The beam splitter consists of two orthogonally cross line defects. The diameter of the two diagonal air holes at the intersection of the two line defects was modified. The input light can be identically divided into the two output ports. The beam splitters can be applied in the photonic crystal Mach-Zehnder interferometers or photonic crystal optical switches. 相似文献
5.
Olaf Hansen 《Mathematical Methods in the Applied Sciences》2002,25(12):1075-1090
In this article we study the radiosity operator along an edge between two adjacent half‐planes. First we show that the radiosity operator is invertible in a whole scale of anisotropic Sobolev spaces. In the absence of any shadows we are able to derive regularity properties of the solution, which depend only on the angle between the half‐planes, the reflectivity coefficients and the right‐hand side. This work can be considered as a supplement to the article of Rathsfeld (Mathematical Methods in the Applied Sciences 1999; 22 : 217–241). Copyright © 2002 John Wiley & Sons, Ltd. 相似文献
6.
Annegret K. Wagler 《Mathematical Methods of Operations Research》2002,56(1):127-149
An edge e of a perfect graph G is critical if G−e is imperfect. We would like to decide whether G−e is still “almost perfect” or already “very imperfect”. Via relaxations of the stable set polytope of a graph, we define two
superclasses of perfect graphs: rank-perfect and weakly rank-perfect graphs. Membership in those two classes indicates how
far an imperfect graph is away from being perfect. We study the cases, when a critical edge is removed from the line graph
of a bipartite graph or from the complement of such a graph. 相似文献
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《组合设计杂志》2002,10(5):283-293
An Orthogonal Double Cover (ODC) of the complete graph Kn by an almost‐hamiltonian cycle is a decomposition of 2Kn into cycles of length n?1 such that the intersection of any two of them is exactly one edge. We introduce a new class of such decompositions. If n is a prime, the special structure of such a decomposition allows to expand it to an ODC of Kn+1 by an almost‐hamiltonian cycle. This yields the existence of an ODC of Kp+1 by an almost‐hamiltonian cycle for primes p of order 3 mod 4 and its eventual existence for arbitrary primes p. © 2002 Wiley Periodicals, Inc. J Combin Designs 10: 283–293, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/jcd.10011 相似文献
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《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):568
An inexpensive method to produce a pyramidal-type 2D photonic structures in the silicon substrate was proposed. The method is based on the combination of imprint lithography and wet Si1 0 0 etching in water solution of hydrazine, which etches 1 1 1 faces much more slowly than others. Thermally grown SiO2 mask for the hydrazine etching was used, because single Al mask cannot be well bonded to the substrate and tends to peel during the etching. It was revealed that transmittance in the infrared spectrum region of the patterned silicon decreases by about five times compared with that of flat silicon substrate and this decrease is almost independent of the angle of the incident beam. In the infrared region, decrease of transmittance of the patterned samples is directly proportional to the wave number. The shape of formed pyramids has strong influence on the transmittance. Decrease of the transmittance is much more rapid and larger in the case of sharpless pillars. 相似文献