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1.
Hydrodynamic cavitation experiments in microfluidic systems have been performed with an aqueous solution of luminol as the working fluid. In order to identify where and how much reactive radical species are formed by the violent bubble collapse, the resulting chemiluminescent oxidation reaction of luminol was scrutinized downstream of a constriction in the microchannel. An original method was developed in order to map the intensity of chemiluminescence emitted from the micro-flow, allowing us to localize the region where radicals are produced. Time averaged void fraction measurements performed by laser induced fluorescence experiments were also used to determine the cavitation cloud position. The combination void fraction and chemiluminescence two-dimensional mapping demonstrated that the maximum chemiluminescent intensity area was found just downstream of the cavitation clouds. Furthermore, the radical yield can be obtained with our single photon counting technique. The maximum radical production rates of 1.2*107 OH/s and radical production per processed liquid volume of 2.15*1010 HO/l were observed. The proposed technique allows for two-dimensional characterisation of radical production in the microfluidic flow and could be a quick, non-intrusive way to optimise hydrodynamic cavitation reactor design and operating parameters, leading to enhancements in wastewater treatments and other process intensifications. 相似文献
2.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0). 相似文献
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4.
C. Maurel 《Surface science》2006,600(2):442-447
Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS2 surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS2 surface so that their electrical behavior can be changed depending on their position with regard to the other islands. 相似文献
5.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR. 相似文献
6.
Volodymyr Malyutenko Vitalii Borblik Victor Vainberg 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):563
An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera. 相似文献
7.
二次谐波系统在浑沌态下的光子统计 总被引:3,自引:2,他引:1
数值分析了调制泵浦作用下的二次谐波产生系统的浑沌动力学行为.考虑到混沌运动的遍历性,提出一种研究浑沌态光场光子统计的数值方法,即通过数值积分求解系统动力学方程估计光子数的系统平均.运用这一方法于二次谐波系统,计算了其在浑沌态下的光子统计分布,结果表明是一种超Poisson分布. 相似文献
8.
R. Gerbaldo G. Ghigo G. Giunchi L. Gozzelino F. Laviano E. Mezzetti 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(3):297-300
We present results from an extended magneto-optical (MO) analysis of two samples cut from high-density pellets of MgB2. The first sample was studied in order to show that no matter how large the sample is and despite the bulk granularity, the
material enters into a critical state in a crystal-like fashion. The second sample was chosen for the quantitative analysis.
A numerical approach based on an inverted 2D Biot-Savart model was used to calculate the current paths across the homogeneous
polycrystalline bulk, as well as in the vicinity and across some morphological defects. Local current densities in the homogeneous
part were estimated as a function of the applied magnetic field at different temperatures, in three regimes: below full penetration,
at full penetration and above full penetration, respectively. A hypothesis of interpretation of the apparent absence of magnetic
granularity inside the polycrystalline microstructure is presented. It is related to a critical state likely reached by a
network of strongly coupled Josephson junctions.
Received 31 May 2001 and Received in final form 5 December 2001 相似文献
9.
10.
Long range one-dimensional ordering of lead phthalocyanine monolayer on InSb(1 0 0) (4 × 2)/c(8 × 2)
Sub-monolayer and monolayer of lead phthalocyanine deposited on InSb(1 0 0) (4 × 2)/c(8 × 2) surface have been investigated by scanning tunneling microscopy and low energy electron diffraction. Molecules first adsorb on the indium rows of the (4 × 2)/c(8 × 2) structure in the [1 1 0] direction and diffuse at the surface in order to form two-dimensional islands. The molecule-substrate interaction stabilizes the PbPc molecules on the In rows. It weakens the interaction between molecules located in adjacent rows resulting in numerous gliding planes between the molecular chains, in the direction parallel to the rows. At monolayer completion, a long-range one-dimensional order is adopted by the molecules in the [1 1 0] direction. 相似文献