Localization and quantification of radical production in cavitating flows with luminol chemiluminescent reactions

Hydrodynamic cavitation experiments in microfluidic systems have been performed with an aqueous solution of luminol as the working fluid. In order to identify where and how much reactive radical species are formed by the violent bubble collapse, the resulting chemiluminescent oxidation reaction of luminol was scrutinized downstream of a constriction in the microchannel. An original method was developed in order to map the intensity of chemiluminescence emitted from the micro-flow, allowing us to localize the region where radicals are produced. Time averaged void fraction measurements performed by laser induced fluorescence experiments were also used to determine the cavitation cloud position. The combination void fraction and chemiluminescence two-dimensional mapping demonstrated that the maximum chemiluminescent intensity area was found just downstream of the cavitation clouds. Furthermore, the radical yield can be obtained with our single photon counting technique. The maximum radical production rates of 1.2*10⁷ OH/s and radical production per processed liquid volume of 2.15*10¹⁰ HO/l were observed. The proposed technique allows for two-dimensional characterisation of radical production in the microfluidic flow and could be a quick, non-intrusive way to optimise hydrodynamic cavitation reactor design and operating parameters, leading to enhancements in wastewater treatments and other process intensifications.     

Electrical behavior of the Au/MoS2 interface studied by light emission induced by scanning tunneling microscopy

Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS₂ surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS₂ surface so that their electrical behavior can be changed depending on their position with regard to the other islands.     

Resistance of nondiffracting vortex beam against amplitude and phase perturbations

The revival of the nondiffracting vortex beam after its interaction with the 2D on axis obstacle is examined. We show that the phase topology and the spatial distribution of the orbital angular momentum of the beam transmitted through the obstacle regenerate to the initial form during further free propagation. We verify that the healing effect appears even if the interaction is accompanied by the exchange of the orbital angular momentum.     

多媒体在二维动量实验中的应用

利用VisualBasic的多媒体功能和CCD摄像头以及气垫桌等组成的实验系统，演示了二维碰撞中的动量守恒．     

Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

二氟甲烷分子3a1和2b2轨道的电子动量谱

借助电子动量谱学结合量子化学理论和其他方法可以给出轨道电子在整个空间的分布信息,由此给出电子运动的完备描述[1,2 ] .清华大学电子动量谱学实验室近几年已成功地对甲烷[3] 、异丁烷[4 ] 、环戊烷[5] 、二乙酰等[6 ] 分子的轨道电子动量分布进行了测量.我们利用第二代电子动量谱仪首次对CH2 F2 分子3a1和2b2 轨道的电子动量谱进行测量,并与理论计算结果作了比较.同时还计算了坐标空间和动量空间中电子在x - y平面的密度分布.电子动量谱学最基本的过程是(e ,2e)反应,即电子与靶粒子碰撞而发生的电离过程.而对于(e ,2e)反应,含有大量信…     

二次谐波系统在浑沌态下的光子统计

数值分析了调制泵浦作用下的二次谐波产生系统的浑沌动力学行为.考虑到混沌运动的遍历性,提出一种研究浑沌态光场光子统计的数值方法,即通过数值积分求解系统动力学方程估计光子数的系统平均.运用这一方法于二次谐波系统,计算了其在浑沌态下的光子统计分布,结果表明是一种超Poisson分布.     

负动量压缩因子的环形对撞机磁聚焦结构的研究

探讨了设计负动量压缩因子(α_p<0)的正负电子对撞机储存环磁聚焦结构的可行性及方法.作为应用实例,说明了设计α_p<0的τ–粲工厂磁聚焦结构的可能性.     

激光调Q CAI

从激光调Q速率方程出发,分析推导了激光调Q过程中,腔内光子数与工作物质内反转粒子数间的关系.再根据激光调Q的过程中,对腔Q值控制方式不同,将激光调Q技术分为:转镜调Q、声光调Q、电光调Q、饱和吸收调Q和脉冲透射式调Q.用C语言进行了激光调Q CAI软件的开发研制,获得了将文学、图形、动画和计算融为一体的,直观而生动地将调Q的理论和过程再现于屏幕的CAI课件.介绍了课件的内容、结构及其特点.