Ultrathin Fe film on Cu(0 0 1): Exchange splitting of image states from first principles

The theoretical investigation of the image states in front of an ultrathin iron film grown on copper has been performed by means of the embedding method and a recently developed procedure for the inclusion of the image potential tail in a first principle calculation. From the electronic response to an applied electric field, the image plane position has been evaluated. This also allows one to obtain useful information about the spin dependent screening properties of the system. Exchange splitting, effective mass, and lifetime of such surface states result in good agreement with recently performed two-photon photoemission experiments [see A.B. Schmidt, M. Pickel, M. Wiemhöfer, M. Donath, M. Weinelt, Phys. Rev. Lett. 95 (2005) 107402].     

Evidence for the short-period oscillations in spin-resolved photoemission of thin Cr(110) films

The spin-resolved electronic structure of thin Cr overlayers on top of the Fe(110) surface was investigated by means of spin- and angle-resolved photoelectron spectroscopy. The initial fast drop of photoelectron spin-polarization at the Fermi level, followed by weak oscillatory behavior with the period of about 2 ML, can give an evidence for the first time spectroscopic observation of the short period oscillations in (110)-oriented thin Cr films.     

Ultraviolet photoemission spectroscopy of hydrogen complex deactivation on InP:Zn(1 0 0) surfaces

Ultraviolet photoemission spectroscopy is used to study the kinetics of the H-Zn complex deactivation in Zn doped InP(1 0 0). Hydrogen injected into the material electronically passivates the local carrier concentration. Reverse-biased anneals of the InP under ultra-high vacuum show a dramatic change in the work function of the material with increasing temperature. Spectral features are also shown to be sensitive to sample temperature. To our knowledge, we show the first view of hydrogen retrapping at the surface using photoemission spectroscopy. A simple photoelectron threshold energy analysis shows the state of charge compensation of the material.     

PHOTOEMISSION WITHIN AND BEYOND THE ONE-STEP MODEL

Photoemission in the vacuum ultraviolet photon regime has proved to be an effective tool for the investigation of valence band surface electronic structure. The interpretation cannot be exclusively confined to the valence bands but has to consider cross sections with realistic final states consistently designed within the one-step model. Therefore especially in the surface sensitive photoemission, several effects hide the final goal of deducing the energetic and wavefunction structure together with microscopic potential parameters through a convincing agreement of calculated with measured spectra. The final states band structure is much less well understood than the valence band structure under consideration. The optical potential, which controls the surface sensitivity through the underlying damping mechanisms, widely relies on empirical assumptions. Furthermore, the photon field is not only strongly influenced but in the vicinity of the plasma frequency also deteriorated by the electronic response. In view of high resolution spectroscopy the accuracy of the data interpretation is affected, and in fact, band-mapping methods are no longer valid. Examples of recent calculations to account for these effects are reviewed.     

纳米稀土-介质薄膜光电发射光谱和能带结构

用真空蒸发沉积的方法制备了纳米稀土(La、Nd、Sm)粒子 BaO介质薄膜.研究表明薄膜的光电发射光谱响应阈值受纳米稀土粒子形状和大小的影响,球形纳米稀土(Sm)粒子 BaO介质薄膜的光谱响应阈值波长为720 nm,条状纳米稀土(La和Nd)粒子 BaO介质薄膜阈值波长分别为650 nm和660 nm.研究得到纳米稀土粒子 介质薄膜等效界面位垒高度在1.7～2.0 eV之间.由于纳米稀土粒子与BaO介质各自逸出功不同,当构成薄膜后使得纳米粒子周围的空间电荷分布发生变化,纳米粒子周围的能带发生弯曲.     

The role of delay times in subcycle-resolved probe retardation measurements

The delay in the nonlinear response of matter to intense laser pulses has been studied since a long time regarding its nuclear contribution. In contrast, the electronic part of the nonlinear response in wide-band-gap dielectrics, which is usually dominant, is not well explored regarding its delay, and previous studies have revealed that the timescale is below 1 fs. Here, the influence of delay times on the recently introduced method of subcycle-resolved probe retardation measurements is investigated using a simulation. In the model assumed, the electronic nonlinearity is divided into the third order Kerr effect and the plasma contribution due to conduction band population in the strong laser field. In the regime of close-to-collinear pump-probe geometries, the probe retardation shows both π- and 2π-oscillations in the pump-probe delay. Sub-femtosecond delay times influence the phase of the oscillations significantly, but it remains difficult to distinguish the influence of the Kerr response from the plasma contribution.     

金阴极微通道板能谱响应的理论研究

分析了金阴极微通道板在X射线段（0.1～10 keV）的能谱响应,从阴极量子效率,X射线在通道材料中的衰减,微通道壁的铅层的光电效应,微通道板通道增益等多个方面进行综合计算,结果表明:得出较完善的阴极型微通道板能谱响应理论公式及其数值模拟曲线.在只考虑一个通道,增益值为1时,微通道板的能谱响应完全取决于金阴极的量子效率,若考虑多通道效应,微通道板的能谱响应受通道材料元素吸收边的影响发生突变,且通道数目越多,影响越显著;能谱响应随电压增大呈增长趋势,但会受到微通道板饱和电流的限制.实验给出了微通道板能谱响应与入射角的关系曲线,确定了能获得增益的最小入射角.     

Radiation damage in soft X-ray microscopy

The rates of chemical transformation by radiation damage of polystyrene (PS), poly(methyl methacrylate) (PMMA), and fibrinogen (Fg) in a X-ray photoemission electron microscope (X-PEEM) and in a scanning transmission X-ray microscope (STXM) have been measured quantitatively using synchrotron radiation. As part of the method of dose evaluation in X-PEEM, the characteristic (1/e) sampling depth of X-PEEM for polystyrene in the C 1s region was measured to be 4 ± 1 nm. Critical doses for chemical change as monitored by changes in the X-ray absorption spectra are 80 (12), 280 (40) and 1230 (180) MGy (1 MGy = 6.242*ρ eV/nm³, where ρ is the polymer density in g/cm³) at 300 eV photon energy for PMMA, Fg and PS, respectively. The critical dose for each material is comparable in X-PEEM and STXM and the values cited are thus the mean of the values determined by X-PEEM and STXM. C 1s, N 1s and O 1s spectroscopy of the damaged materials is used to gain insight into the chemical changes that soft X-rays induce in these materials.     

Work function of metals: Relation between theory and experiment

Theoretical approaches to calculation of work function within jellium model and the problem of extension of this model to include the lattice corrections to the work function are briefly discussed. Lattice corrections to the work function obtained from the experiment are estimated and compared with those calculated theoretically.

It is found that the mean value of the experimental lattice correction <δψ_hkl>_hkl compared to the mean work function is negligible. It is stated that the mean work function can be treated as a material constant characterizing a given metal, such as, e.g., binding energy.An expression for the dependence of jellium work function on r_s, valid in a metallic range of r_s, is given. A comparison between then theoretical and experimental results is presented and the role of correlation energy is examined. It is shown that more accurate approximations of the correlation energy than that given by Wigner's formula lead to a better agreement with experiment. A simple model is presented for explanation of work function changes on single crystal planes. Some recent results concerning the thermal dependence of work function are given. The dependence of the work function on the degree of coverage is discussed both for alkali and non-alkali atoms adsorption. Theoretical models are briefly reviewed and comparison between theory and experiment is made. A simple model is presented for explanation of the work function variation on rough planes in metallic non-alkali atoms chemisorption.     

Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.