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1.
Growth characteristics and surface morphology of boron carbide films fabricated by ablating a B4C target in high vacuum with a traditional KrF excimer laser and a high brightness hybrid dye/excimer laser system emitting at the same wavelength while delivering 700 fs pulses are compared. The ultrashort pulse processing is highly effective. Energy densities between 0.25 and 2 J cm−2 result in apparent growth rates ranging from 0.017 to 0.085 nm/pulse. Ablation with nanosecond pulses of one order of magnitude higher energy densities yields smaller growth rates, the figures increase from 0.002 to 0.016 nm/pulse within the 2-14.3 J cm−2 fluence window. 2D thickness maps derived from variable angle spectroscopic ellipsometry reveal that, when ablating with sub-ps pulses, the spot size rather than the energy density determines both the deposition rate and the angular distribution of film material. Pulse shortening leads to significant improvement in surface morphology, as well. While droplets with number densities ranging from 1 × 104 to 7 × 104 mm−2 deteriorate the surface of the films deposited by the KrF excimer laser, sub-ps pulses produce practically droplet-free films. The absence of droplets has also a beneficial effect on the stoichiometry and homogeneity of the films fabricated by ultrashort pulses. 相似文献
2.
S. B. Krupanidhi 《Journal of Chemical Sciences》2003,115(5-6):775-788
Relaxor properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) and non-lead perovskite thin films have been analysed in terms of large frequency dispersion of dielectric response
at low temperatures. A wide spectrum of dielectric relaxation was observed in the frequency-dependent response of the imaginary
part of the dielectric permittivity. Transformation from normal ferroelectric to relaxor behaviour has been observed in the
case of the Ca substituting the BaTiO3 thin films. A number of techniques were exploited to investigate the wide spectrum of relaxation times in pulsed laser ablated
thin films.ac anddc electric field induced complex dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were studied as function of frequencies at different temperatures. Nonlinear behaviour of dielectric
susceptibility with respect to the amplitude of theac drive was observed at lower temperatures. The frequency dependence of transition temperatureT
m
(temperature of the maximum of dielectric constant) was studied using the Vogel-Fulcher relation.
Dedicated to Professor C N R Rao on his 70th birthday 相似文献
3.
M. Igarashi K. KakimotoT. Hayashida Y. HanadaS. Fujita K. MoritaN. Nakamura S. HanyuY. Sutoh H. KutamiY. Iijima T. Saitoh 《Physica C: Superconductivity and its Applications》2010,470(20):1230-1233
We have studied a hot-wall heating system to produce GdBa2Cu3Oy (GdBCO) films with large critical currents (Ic) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (Jc) of about 3 MA/cm2 and Ic over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform Ic distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with Ic over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W. 相似文献
4.
Jan Remsa Miroslav Jelinek Tomáš Kocourek Ji?í Oswald Marian ?erňanský Michal Jelínek 《Applied Surface Science》2009,255(10):5292-5294
High quality, thick, highly oriented crystalline thin films of Yttrium Aluminum Garnet (Y3Al5O12) and Yttrium Aluminum Perovskite (YAlO3) doped with Erbium were prepared by pulsed laser deposition. Samples were created in vacuum or oxygen environment. Depositions were arranged at room temperature, or at high substrate temperatures ranging from 800 to 1100 °C. Amorphous layers were annealed by laser, or in oven (argon flow, temperatures in range from 1200 to 1400 °C). Fused silica and sapphire (0 0 0 1) were used as substrates. Properties of films were characterized by X-ray diffraction, atomic force microscopy, and by photoluminescence measurement. Size of crystalline grains was in the range 116-773 nm. Thickness of layers was up to 17 μm. 相似文献
5.
介绍了采用X射线光电子谱(XPS)等技术研究脉冲激光沉积在Ni、Mo、C、NaCl(100)表面的Cu、Au原子团簇的电子状态;结合Cu2p3/2 X射线光电子谱峰和Cu L3M4,5M4,5俄歇跃迁分离了电子结合能的初态和终态贡献,得出了它们随Cu表面浓度变化的关系,并对之作出了解释。使用XPS、RBS、TEM三项技术研究了Au在NaCl(100)表面的生长过程,通过计算得出了在不同表面浓度下Au原子团簇的平均高度和表面覆盖率。 相似文献
6.
7.
A porous SiC (PSC) layer was fabricated by anodization of a 1.6 μm thin SiC layer deposited onto p-type Si(1 0 0) substrate by pulsed laser deposition (PLD), using a hot-pressed 6H-SiC(p) as sputtered target. p-Type PSC layers were fabricated by anodization in HF/ethylene glycol electrolyte (1:1 by vol.) at different etching times. The properties of the PSC layer formed by this method were investigated by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and photoluminescence (PL). The results show, that the growth layer was crystalline and PL spectra exhibit blue band emission centered at 2.95 eV. In addition, the results indicate clearly an increase in PL intensity by ten times of magnitude compared to that exhibited by the unetched sample. 相似文献
8.
G. Dixit J. P. Singh R. C. Srivastava H. M. Agrawal R. J. Choudhary A. Gupta 《Surface and interface analysis : SIA》2010,42(3):151-156
Nickel ferrite is a soft magnetic material with inverse spinel structure. Soft ferrite films are used in microwave devices, integrated planar circuits, etc., because of their high resistivity. In this work, thin films of nickel ferrite were deposited on Si (100) substrate by using pulsed laser deposition (PLD) technique. The thickness of the film was measured by surface profilometer and also by X‐ray reflectivity (XRR). The films were annealed at three different temperatures to observe the effect on the structural and magnetic properties of the film. The films were characterised by X‐ray diffraction (XRD), Raman spectroscopy and vibrating sample magnetometer (VSM) to study the structural and magnetic properties. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
9.
本文使用脉冲激光沉积的方法在SrTiO3(STO)单晶衬底上采用一种新型的透明导电氧化物材料La0.07Sr0.93SnO3(LSSO)薄膜作为电极材料制备了BiFe0.95Mn0.05O3(BFMO)铁电薄膜电容器.XRD表征结果证实BF-MO/LSSO/STO外延异质结具有很好的单晶质量.光透过率的测试结果表明在500~2500nm的波长范围内,整个异质结的透光率与单纯STO衬底基片相似.在波长500nm附近BFMO出现吸收边,通过对吸收边进行(hνα)2-hν曲线拟合得到BFMO的直接光学带隙约为2.8eV.利用Pt作为上电极,我们测得了饱和的电滞回线,剩余极化Pr~60μC/cm2. 相似文献
10.
The preparation process, crystallinity and electrical properties of pulse laser deposited Pb(ZrxTi1−x)O3 (PZT) thin films were investigated in this paper. PZT (x = 0.93) thin film samples deposited at different substrate temperatures were prepared. Si (1 1 0) was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by pulsed laser deposition (PLD), and then PZT was epitaxially deposited on YBCO also by PLD. After annealing, the top electrode Ag was prepared on PZT by thermal evaporation, and then the Ag/PZT/YBCO/Si structured thin films were obtained. The XRD and the analysis of their electrical characters showed that, when the substrate temperature was elevated from 600 °C to 800 °C, the crystallinity and electrical properties of PZT thin films became better and better, and the FR(LT)–FR(HT) phase transition of PZT (x = 0.93) thin films occurred at 62 °C. The PZT film deposited at 800 °C had the best pyroelectric properties, and when the FR(LT)–FR(HT) phase transition of this film occurred, the peak value of pyroelectric coefficient (p) was obtained, with a value of 1.96 × 10−6 C/(cm2 K). The PZT film deposited at 800 °C had the highest remnant polarization (Pr) and the lowest coercive field (Ec), with the values of 34.3 μC/cm2 and 41.7 kV/cm respectively. 相似文献