Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

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介绍了在神光Ⅱ装置上开展的长脉冲2ns三倍频激光与黑腔靶相互作用的实验。报道了采用PIN探测器阵列测量大角度受激Raman散射（SRS）角分布和采用激光卡计对背向SRS光能量积分测量的实验结果。相同实验条件下激光辐照缝靶产生的SRS光能量要强于激光与全腔靶作用产生的SRS光，小腔靶的SRS光能量要强于标准腔靶。对比长脉冲2ns及短脉冲1ns激光打靶实验结果可以看出：由于激光功率密度的下降，长脉冲激光打靶时SRS散射光能量要弱于短脉冲激光打靶。长脉冲2ns激光与标准腔靶相互作用时，等离子体堵腔比较严重。     

Analysis of heterojunction resonant cavity-enhanced Schottky photodiodes by using two-valley transport model

The article concerns heterojunction resonant cavity-enhanced (RCE) Schottky photodiodes with GaAs in the absorption layer. The quantum efficiency and linear pulse response have thoroughly been analysed. For the first time, the response of a heterojunction photodiode has been modelled by the phenomenological model for a two-valley semiconductor. The results obtained have shown that the satellite valleys, as well as the parasitic time constant, significantly influence the response and, accordingly, have to be taken into account when analysing and optimizing RCE photodetectors.     

Two-colour HgCdTe infrared detectors operating above 200 K

The performance of dual waveband HgCdTe photodiodes fabricated using metaloorganic chemical vapour deposition operated at high temperatures is presented. The effect of additional separating layer on the quantum efficiency and cross-talk of the photodiodes is analyzed. The photodiodes with cutoff wavelengths up to 6 μm, good R₀A product, and high quantum efficiency at 200 K have been demonstrated. The temperature dependence of the differential resistance is discussed. It is shown that the multilayer heterojunction P-n-N-n-P structure operating in a simultaneous mode has better performance than a structure operating in a sequential mode.     

Electro-optical granulometer for measurements of flowing particles

An electro-optical technique is described for the measurement of the size distribution of particles from 2.5 μm upwards, in a flow. The apparatus utilizes a white light source, a photodiode array and particle-sizing electronics. The data acquisition system is a multichannel analyser or a microcomputer. This device is an extension to the flow case of a previous device designed for static size analysis, and a critical comparison with size acquisition systems commercially available is given. Shape of particles and outline of waveform during particle detection are discussed.     

Optical characterization of the silicon photodiodes for the establishment of national radiometric standards

Optical properties of the silicon photodiodes are investigated in the visible spectral regime. Non-linearity measurement standard was established by using Hamamatsu S1337-11 type windowless silicon photodiode whose non-linearity value was found to be better than 6×10⁻⁵ at photocurrent level of 10⁻⁹ to 10⁻⁴ A. Temperature effects on the spectral responsivity for S1337-11, S1337-1010BQ and S1227-1010BQ type photodiodes were analyzed between 20°C and 40°C at 488.1, 514.7 and 632.8 nm vacuum wavelengths. The spatial uniformities of the responsivity for three type photodiodes are performed with a laser beam having 1 mm diameter by using home made two-axis micro translation system. Results of the reflectance measurements for three elements of reflection-based trap detectors were compared with the predicted values obtained from Fresnel equations.     

用于脉冲γ强度测量的Ф60,1000μmPIN探测器

采用电阻率为10000—20000Ω.cm的高阻单晶硅材料,研制成功灵敏区尺寸为60mm,耗尽层厚度~1000μm的大面积厚PIN半导体探测器.设计了该类探测器厚度测量专用的反冲质子测量系统,对探测器的时间响应、γ灵敏度、漏电流、γ/n分辨等物理参数进行了测量和分析,结果表明,这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要.     

含有源频率选择表面可调复合吸波体

基于传输线等效理论,设计了含有源频率选择表面(active frequency selective surface,AFSS)的三层可调复合吸波体,第一层是表面层,为AFSS衬底;中间层是AFSS层,由频率选择表面(frequency selective surface,FSS)和PIN二极管阵列构成;第三层是介质层.反射率测量结果表明,通过调节PIN二极管阵列偏置电压可以动态调节吸波体反射特性,在偏置电压为5 V时,可获得最佳吸波性能,在5—15 GHz和5.3—13 GHz频段分别可获得-8 dB和- 关键词： 频率选择表面 复合吸波材料 反射率 PIN二极管     

减小雪崩光电二极管温度影响的研究

本文就如何减小温度对雪崩光电二级管响应度的影响进行了研究。文中从理论上分析了温度以及偏置电压对雪崩光电二极管响应度的影响，并在此基础上提出了两种减小温度影响的可行方法：恒温恒压法和偏置电压温度补偿法，并进行了实验验证     

一种光电混合集成有源光双稳器件

本文报道一种光电混合集成的有源双稳态器件,它仅由一只半导体激光器,两只PIN光电探测器及几只电子元器件构成.实验上得到了光学迟滞回线,显示了光开关、光存储、光脉冲整形等功能.文中简述了器件工作原理,光电混合集成制作工艺技术及性能指标.