Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Design and Cold Tests of Asymmetric Quasioptical Resonators

This paper presents the design and test of asymmetric quasioptical resonators for gyrotron applications, where most of the diffraction output coupling comes from the smaller of two mirrors. A computer code based on scalar diffraction theory is used to calculate the resonator losses and the electric field near the mirrors. Resonators with mirror separations approaching confocal have reduced side lobes in the diffraction patterns, which should allow for better power transmission and focusing. Cold tests have been performed at 94 and 141 GHz to measure the quality factor of the asymmetric resonators as a function of mirror separation and mirror misalignment. Typical resonator parameters include 65 cm mirror separation, 1-3% output coupling and 85% of the losses from the small mirror. A half-symmetric resonator with one flat and one curved mirror has also been investigated. The calculated values of Q are in reasonably good agreement with the cold test measurements.     

Bending loss measurement using a fiber cavity ringdown scheme

A novel sensitive technique for the determination of losses in fiber cavities is presented. The method is based on the cavity ringdown scheme implemented in silica-based single-mode fibers. Bending losses of fiber cavities of different lengths have been measured showing all an oscillating behavior with respect to the curvature radius of the fiber as predicted by a theoretical model. The best minimum detectable absorbance per cavity pass achieved by this new method is 1.72×10⁻³ dB within a 10 m-long cavity. This limit suffices well for an accurate determination of optical bending losses even in bend-insensitive fibers. Furthermore, the comparison of the measured bending losses with a theoretical model allows the extraction of different fiber parameters. Good agreement has been found between the experimentally derived parameters and literature data.     

Failure of the Quasiparticle Picture of X-ray Absorption?

The Golden rule expression for x-ray absorption spectra (XAS) is typically calculated within a one-particle (quasiparticle) approximation and generally leads to good agreement between theory and experiment. The fact that a quasiparticle approximation works fairly well is surprising, since it neglects satellite excitations and intrinsic losses due to a suddenly created core-hole. The resolution of this paradox requires physics beyond the independent particle approximation. This is discussed here using an effective Green's function formulation based on a quasi-boson model that takes interference between inelastic losses into account. This approach shows that inelastic excitations such as multi-electron excitations tend to be suppressed, and that the XAS is given by a broadened quasiparticle particle approximation, together with weak satellite structure and edge singularity effects.     

Nonequilibrium Statistical Thermodynamics of Two Dissipative Processes in Solids: Energy Losses of Channeled Particles at Low Velocities and Ultrasound Absorption by Conduction Electrons

We use methods of nonequilibrium statistical thermodynamics to investigate two dissipative processes in solids. We find the electron energy losses of a particle moving in a planar channeling regime and the sound absorption coefficient in metals under electron impurity scattering. The oscillator model is used to analyze the contribution from the effect of electron entrainment by a moving scattering center to the total dissipated energy. We investigate the frequency and temperature dependence of energy losses and also the dependence of the absorption coefficient on the sound wave vector.     

Numerical analysis of roughness effect on microtube heat transfer

Roughness effect on the heat transfer and pressure loss performances of microscale tubes and channels are investigated through a finite element CFD code. Surface roughness is explicitly modelled through a set of random generated peaks along the ideal smooth surface. Different peak shapes and distributions are considered; geometrical parameters are representative of tubes in the diameter range from 50 to 150 μm. The use of a fine enough mesh allows the direct computation of tube performances under the assumption of incompressible fully developed flow. As a result, a significant increase in Poiseuille number is detected for all of the configurations considered, while the effect of roughness on heat transfer rate is smaller and highly dependent on the tube shape.     

Alternating-current losses in two-layer superconducting cables consisting of second-generation superconductors coated by U-shaped ferromagnetic materials

Alternating-current losses in a two-layer superconducting cable, each layer being composed of 15 closely-spaced rectangular wires made up of second-generation superconductors when the ends of wires are coated by either a non-magnetic or strong ferromagnetic material having a U profile is numerically investigated. Computations are carried out through the finite-element method. The alternating-current losses do not increase significantly if the relative permeability of the coating is increased three orders of magnitude, provided that the current amplitude is less than half of the critical current in a superconducting wire. However, the losses are much higher for ferromagnetic coating if the amplitude of the applied current oscillating at 50 Hz is close to the critical current. The ferromagnetic coating is seen to accumulate the magnetic field lines normally on its surfaces, while the field lines are parallel to the long axes of the wires, leading to more significant flux penetration in the coated regions. This facilitates a uniform low-loss current flow in the uncoated regions of the wires. In contrast, coating with a non-magnetic material gives rise to a considerably smaller current flow in the uncoated regions, whereas the low-loss flow is maintained in the coated regions. Moreover, the current flows in opposite directions in the coated and uncoated regions, where the direction in each region is converse for the two materials.     

MgB2超导圆线基底交流损耗的计算分析

二硼化镁(MgB2)超导体在非铜氧化物陶瓷超导体中具有最高临界转变温度,给超导应用带来了新的契机.铁与镁不反应,且价格低廉,在需要热处理的超导成材工艺中,常常采用铁作MgB2的基底;然而,这种高磁导率的材料有可能增大基底的损耗.本文采用有限元分析软件ANSYS计算了工频下不同材料基底超导圆线传输交流的基底损耗,分析了基底损耗与电流大小、基底厚度之间的关系,对双层基底的损耗也进行了研究.本文的结果对于适当选取截面尺寸、基底材料和工作电流以期减小交流损耗,具有一定参考意义.     

Diffraction mode selection in planar Bragg resonators of optical and microwave wavelength ranges

Using the coupled waves approach complemented by the time-domain quasi-optical approximation, we solve a 2D diffraction problem which allows to evaluate the eigenfrequencies, quality factors and spatial structures of eigenmodes in planar Bragg resonators with a finite length and width of the corrugated area. We find the values of the Fresnel parameter determined by the geometrical dimensions of the system which allows for efficient transverse mode discrimination due to the larger diffraction losses of the modes with higher transverse numbers.     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.