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排序方式: 共有1322条查询结果,搜索用时 15 毫秒
1.
High index of refraction via quantum interference in a three-level system of Er^3+-doped yttrium aluminium garnet crystal 下载免费PDF全文
A simple three-level system is proposed to produce high index of refraction with zero absorption in an Er^3+-doped yttrium aluminium garnet (YAG) crystal, which is achieved for a probe field between the excited state 4I13/2 and ground state 4I15/2 by adjusting a strong coherent driving field between the upper excited state 4I11/2 and 4I15/2. It is found that the changes of the frequency of the coherent driving field and the concentration of Er^3+ ions in the YAG crystal can maximize the index of refraction accompanied by vanishing absorption. This result could be useful for the dispersion compensation in fibre communication, laser particle acceleration, high precision magnetometry and so on. 相似文献
2.
J Ashenfelter 《Pramana》2002,59(5):713-717
The ESTU began operation in 1988 and achieved the design voltage of 20 MV in 1990. Since that time, improvements to the gas
handling system, negative ion injector, accelerator terminal and control system have greatly increased its capability and
reliability. Today, the ESTU can efficiently produce an extensive assortment of stable ions at wide-ranging energies in support
of low-energy nuclear physics. 相似文献
3.
Shuichi Ishida Keiki Takeda Atsushi Okamoto Ichiro Shibasaki 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):255
Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ013 meV, the electron effective mass of m*0.10m0 seven times of the band edge mass in bulk InSb and the effective g-factor of |g*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory. 相似文献
4.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR. 相似文献
5.
Volodymyr Malyutenko Vitalii Borblik Victor Vainberg 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):563
An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera. 相似文献
6.
J. R. Lindle W. W. Bewley I. Vurgaftman J. R. Meyer J. L. Johnson M. L. Thomas W. E. Tennant 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):558
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. 相似文献
7.
Yang Woo Shin 《Operations Research Letters》2004,32(4):364-373
We consider a single server queue with disasters where the arrivals of customers and disasters are correlated. When a disaster occurs, it removes all the customers in the system and there requires repair time for the system to be operated normally. The stationary queue length distribution at the embedded points and at an arbitrary time are presented. 相似文献
8.
The refraction holodiagram RHD is analyzed here with respect to the law of refraction. Particularly, we study the surface that exactly conjugates by refraction a virtual point source with a real image or conversely. By using the total optical path as a parameter we build a diagram that consists in a family of Descartes ovals of the apple type that contains the Pascal's limaçon as a particular extreme case and the spherical surface with the Weierstrass points as another. These representations permit the straightforward application of Fermat's principle in the case of arbitrary refracting surfaces and show the shape of generalized Fresnel's zones in the intersections with any surface. Snell's law is applied to rays incident on the apple type surfaces to find out the conditions for exact conjugation. Sensitivity to optical path variations is also discussed. The RHD curves family can be represented in a Cartesian way where the ovals appear as equally spaced straight lines. 相似文献
9.
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