HIRFL–CSR加速器中束流与真空中剩余气体的碰撞损失

研究了重离子加速器中束流与真空中剩余气体的碰撞损失过程和碰撞截面,在依据大量实验数据的基础上,提出了一组计算离子一原子的电荷交换截面的经验公式.以兰州重离子加速器HDRFL及冷却储存环CSR为例,给出了依据碰撞截面的公式计算束流在加速器真空中的传输效率的方法,并计算了在不同真空度下HIRFL的ECR源轴向注入束运线、注入器SFC、前束运线、主加速器SSC和后束运线等不同加速阶段及CSR的传输效率,并提出合理的真空度要求.HIRFL的真空分布测量和束流的损失测量证明了该计算方法的可靠性.     

非傍轴平顶高斯光束M2因子两种定义的比较研究

基于功率密度的二阶矩方法,推导出了非傍轴平顶高斯(FG)光束束宽和远场发散角的解析表达式·研究表明,当w0/λ→0时,远场发散角趋于渐近值θmax=63.435°,与阶数无关·使用非傍轴高斯光束代替傍轴高斯光束作为理想光束,研究了非傍轴FG光束的M2因子,并与传统定义的M2因子作了比较·在非傍轴范畴,非傍轴FG光束的M2因子不仅与阶数N有关,而且与w0/λ有关·按照定义,当w0/λ→0时,非傍轴FG光束的M2因子不等于0,对阶数N=1,2,3时,M2因子分别趋于0.913,0.882和0.886·当N→∞时,M2因子取最小值M2min=0.816·     

光纤的能量传输特性及应用

着重分析了影响光纤传输能量以及光纤传输中造成能量损耗的因素。这些因素主要包括光纤材料、构造、光纤的折射率分布、光纤的长度和芯径、光纤的数值孔径和热效应以及耦合等。同时 ,结合激光二极管点火的实例 ,分析探讨了其背景和应用价值。结论是 :为了尽可能减少能量损耗、提高光纤输出的激光功率和激光功率密度 ,应当选取合适的激光工作波长、较小的光纤长度、较小的芯径和较小的数值孔径 ,应采用渐变折射率分布光纤 ,应减少弯曲与耦合     

An admissible minimax estimator of a bounded scale-parameter in a subclass of the exponential family under scale-invariant squared-error loss

A subclass of the scale-parameter exponential family is considered and for the rth power of the scale parameter, which is lower bounded, an admissible minimax estimator under scale-invariant squared-error loss is presented. Also, an admissible minimax estimator of a lower-bounded parameter in the family of transformed chi-square distributions is given. These estimators are the pointwise limits of a sequence of Bayes estimators. Some examples are given.     

Combined effect of PMD and PDL on four-wave-mixing-induced crosstalk in WDM system

We derive an explicit autocorrelation function (ACF) formula of state of polarization for a fiber transmission system with polarization mode dispersion (PMD) and polarization dependent loss (PDL), which is found to agree well with Monte Carlo simulation. Then we use the new ACF to investigate the combined effect of PMD and PDL on the polarization multiplexed scheme. We find the performance of the polarization multiplexed scheme can be deteriorated more severely than the case without PDL.     

加权二次有理Bézier插值曲线

在本文中,给定一组有序空间数据点列及每个数据点的切矢向量,利用加权二次有理Bézier曲线对数据点作插值曲线,使该曲线具有C1连续性,并且权因子只是对相应顶点曲线附近产生影响,同调整两个相邻的权因子可以调整这两个相邻顶点之间的曲线和它的控制多边形.     

辐射传递蒙特卡洛法精度分析及数值试验

本文建立了蒙特卡洛法模拟散射参与性介质内辐射传递计算模型。对蒙特卡洛法的计算精度及运行时间进行了较为详细的分析,提出了几种判断计算精度的方法。同时,借助蒙特卡洛法模拟辐射传递过程,进行数值“辐射实验”。利用该“实验结果”进行了物性反问题研究。在已知光学厚度的前提下,得到散射反照率与后半球辐射热流之间的单值函数关系。     

Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.