Nano-laser on silicon quantum dots

A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d < 3 nm) can make the localized states into band gap. The emission energy of nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.     

基于表面等离子体激元的纳米激光器设计

设计了一种基于纳米线/间隔层/金属层的纳米激光器结构.该结构中,金属界面的表面等离子体模式与高增益介质纳米线波导模式耦合,提高了场增强效应.采用有限元法,分析了该结构的模式特性和增益阈值随几何尺寸的变化规律.结果表明:该结构具有较低的传播损耗和较强的光场限制能力,有效传播损耗最小值仅为0.013 3,归一化模式面积最小值仅为0.007.该纳米激光器结构可为发展新一代高效纳米激光器件提供理论和技术支持.