Unique ion beam scattering technique on depth profile determination

Abstract

By combination of energy and time of flight detection in ERDA or NRA measurement, the particles' masses can be determined, additionally to the depth information. This leads to unique depth profile determination even for complex targets. Combination with th concept of Jacobi transformations results in extremely fast measurements. In this paper, a way is shown how this concept can be realized even for accelerators ofenergies as low as about 1 MeV.     

The influence of laser power and repetition rate on oxygen and nitrogen insertion into titanium using pulsed Nd:YAG laser irradiation

Oxygen and nitrogen insertion in a titanium substrate is performed in air using a Q-switched Nd-YAG laser. This process modifies the surface by the formation of specific layers on the substrate. These layers show different properties, largely influenced by the insertion of elements in the layers. The treatment conditions, especially the laser parameters (fluence and repetition rate), must be known and controlled. Using nuclear analysis, we demonstrate that oxygen insertion is mainly influenced by repetition rate, and that nitrogen insertion is controlled by laser fluence. The physical phenomena involved in the oxygen and nitrogen insertion are discussed.     

Use of QUASES™/XPS measurements to determine the oxide composition and thickness on an iron substrate

QUASES? Analyze and Generate were used to model the extrinsic loss structures for XPS spectra of oxide films grown on iron in such a way that their thickness and structure could be determined. The Generate program used in conjunction with spectra of model iron oxides allowed for both magnetite (Fe₃O₄) and maghaemite (γ‐Fe₂O₃) structures to be identified in all films studied. These structures were identified as overlying layers in the oxide films and were usually intermixed at their interface. The absence of other iron oxide structures within the film could be tested based on their goodness of fit to the experimental spectrum. Comparison of the thickness values obtained using Generate with those found using nuclear reaction analysis suggested that the Generate results were higher by 20%. This difference likely resulted from the use of a calculated inelastic mean free path value for Fe 2p electrons in the Generate calculation rather than using the real attenuation length. For oxide films whose thickness approached 10 nm, the QUASES? results for photoelectron spectra obtained with a Zr achromatic x‐ray source were compared with those from the standard Al monochromatic source. In this particular case, the oxide thicknesses obtained using Generate and Analyze were found to be more consistent when the Zr source was used. Copyright © 2004 John Wiley & Sons, Ltd.     

Glass of the past: The degradation and deterioration of medieval glass artifacts

Medieval artifacts made of glass are at a serious disadvantage concerning the chemical stability compared with ancient or common modern glasses. The total amount of silica and other network formers such as alumina is very low and potassium instead of sodium was introduced into the silicate structure by using local raw material. By means of scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS) and nuclear reaction analysis (NRA) a weathering mechanism governed by an ion exchange process could be determined for medieval glass paintings exposed to the ambient air for centuries. Additionally, the leached glass surface of medieval hollow glass artifacts found in a well and exposed to moist earth show a brown discoloring due to the oxidation of Mn(II) to Mn(IV) oxide. That process can be converted by a treatment of the glass objects in an aqueous hydrazine solution.     

18O distributions in porous anodic alumina by plasma profiling time‐of‐flight mass spectrometry and nuclear reaction analysis

A comparison is made between plasma profiling time‐of‐flight mass spectrometry (PP‐TOFMS) and nuclear reaction analysis (NRA) for depth profiling of ¹⁸O tracer in porous anodic oxide films on aluminum. The films were formed galvanostatically, for a range of times, using phosphoric acid electrolytes that were either enriched in ¹⁸O or of the natural isotopic concentration. The morphologies of the films were determined by electron microscopy. The findings from PP‐TOFMS and NRA reveal a partitioning of the tracer between the surface regions and buried layers of the films. However, a relatively high background of ¹⁶O in PP‐TOFMS prevents a reliable quantification of the concentration of ¹⁸O. Copyright © 2012 John Wiley & Sons, Ltd.     

Formation of carbon nitride compounds during successive implantations in copper

Copper substrates are successively implanted with carbon and nitrogen (¹³C⁺ and ¹⁴N⁺) at high fluences (5 × 10¹⁷ and 1 × 10¹⁷ at. cm⁻², respectively) in order to synthesize specific carbon nitride compounds. The concentration as well as the depth distribution of carbon ¹³C and nitrogen ¹⁴N are determined using non resonant nuclear reactions induced by a 1.05 MeV deuteron beam. The use of (d,p) and (d,α) reactions allows us to profile both ¹³C and ¹⁴N elements with a single and relatively rapid measurement and a quite good resolution. The bonded states of carbon and nitrogen are studied as a function of depth by X-ray photoelectron spectroscopy (XPS). The curve fitting of the C 1s and N 1s photopeaks shows that carbon and nitrogen atoms exist in different chemical states depending on the analysis depth, which correspond to specific kinds of chemical bonds. At least two characteristic C–N bonds are detected indicating that different carbon nitride compounds have been formed during the implantations.     

Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study

Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements of and resolve any relevant measurement issues in the amount of thermal oxide on (100) and (111) orientation silicon wafer substrates in the thickness range 1.5–8 nm. As a result of the invitation to participate in this activity, 45 sets of measurements have been made in different laboratories using 10 analytical methods: medium—energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), XPS, SIMS, ellipsometry, grazing—incidence x‐ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM). The measurements are made on separate sets of 10 carefully prepared samples, all of which have been characterized by a combination of ellipsometry and XPS using carefully established reference conditions and reference parameters. The results have been assessed against the National Physical Laboratory (NPL) data and all show excellent linearity. The data sets correlate with the NPL data with average root‐mean‐square scatters of 0.15 nm, half being better than 0.1 nm and a few at or better than 0.05 nm. Each set of data allows a relative scaling constant and a zero thickness offset to be determined. Each method has an inherent zero thickness offset between 0 nm and 1 nm and it is these offsets, measured here for the first time, that have caused many problems in the past. There are three basic classes of offset: water and carbonaceous contamination equivalent to ～ 1 nm as seen by ellipsometry; adsorbed oxygen mainly from water at an equivalent thickness of 0.5 nm as seen by MEIS, NRA, RBS and possibly GIXRR; and no offset as seen by XPS using the Si 2p peaks. Each technique has a different uncertainty for the scaling constant and consistent results have been achieved. X‐ray photoelectron spectroscopy has large uncertainties for the scaling constant but a high precision and critically, if used correctly, has zero offset. Thus, a combination of XPS and the other methods allows the XPS scaling constant to be determined with low uncertainty, traceable via the other methods. The XPS laboratories returning results early were invited to test a new reference procedure. All showed very significant improvements. The reference attenuation lengths thus need scaling by 0.986 ± 0.009 (at an expansion factor of 2), deduced from the data for the other methods. Several other methods have small offsets and, to the extent that these can be shown to be constant or measurable, these methods will also show low uncertainty. Recommendations are provided for parameters for XPS, MEIS, RBS and NRA to improve their accuracy. Copyright © 2004 John Wiley & Sons, Ltd.     

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950 °C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E_α = 3.2 MeV, nuclear reaction analysis (NRA) at E_d = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.     

Thin films of vanadium oxide grown on vanadium metal: oxidation conditions to produce V2O5 films for Li‐intercalation applications and characterisation by XPS,AFM, RBS/NRA

Thin films of vanadium oxide were grown on vanadium metal surfaces (i) in air at ambient conditions, (ii) in 5 mM H₂SO₄ (aq), pH 3, (iii) by thermal oxidation at low oxygen pressure (10^?5 mbar) at temperatures between 350 and 550 °C and (iv) at near‐atmospheric oxygen pressure (750 mbar) at 500 °C. The oxide films were investigated by atomic force microscopy (AFM), X‐ray photoelectron spectroscopy (XPS), X‐Ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). The lithium intercalation properties were studied by cyclic voltammetry (CV). The results show that the oxide films formed in air at room temperature (RT), in acidic aqueous solution, and at low oxygen pressure at elevated temperatures are composed of V₂O₃. In air and in aqueous solution at RT, the oxide films are ultra‐thin and hydroxylated. At 500 °C, nearly atmospheric oxygen pressure is required to form crystalline V₂O₅ films. The oxide films grown at pO₂ = 750 mbar for 5 min are about 260‐nm thick, and consist of a 115‐nm outer layer of crystalline V₂O₅. The inner oxide is mainly composed of VO₂. For all high temperature oxidations, the oxygen diffusion from the oxide film into the metal matrix was considerable. The oxygen saturation of the metal at 450 °C was found, by XPS, to be 27 at.% at the oxide/metal interface. The well‐crystallized V₂O₅ film, formed by oxidation for 5 min at 500 °C and 750 mbar O₂, was shown to have good lithium intercalation properties and is a promising candidate as electrode material in lithium batteries. Copyright © 2005 John Wiley & Sons, Ltd.     

微束核反应及其对流体包裹体的应用

本文主要介绍了扫描质子探针中微束核反应分析原理。给出了用８７２ｋｅＶ质子能量的＾１９Ｆ（ｐ,αγ）＾１６Ｏ共振反应测量氟元素的方法,并利用扫描质子探针对地幔流体包裹体内的氟元素含量进行了测量。