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1.
以均苯三甲酸为配体,水热条件下合成了均苯三甲酸铕及铕镧系列发光配合物LaxEu1-x(BTC)·nH2O(x=0,0.1,0.3,0.5,0.7,0.9),通过元素分析及化学滴定法测定了配合物的组成。用红外光谱对其进行了表征,确定了该系列配合物的组成为LaxEu1-x(BTC)·nH2O。研究了系列配合物的荧光性质,荧光光谱表明:该类配合物均能发出强的铕离子的特征荧光,并且镧元素的掺入能增强铕配合物的发光强度,但发射峰的位置基本上没有变化;其中5D0→7F1和5D0→7F2的跃迁发射较强,且均劈裂为两个峰(587,593nm)和(611,618nm),这是由于铕离子所处的配位环境引起的。 相似文献
2.
3.
Ray Leslie Withers Carlos Otero-Diaz Adrian Gómez-Herrero Albert Prodan Lasse Norén 《Journal of solid state chemistry》2005,178(10):3159-3168
Ternary derivatives of 1T-TaS2 have been synthesized and the variation in the highly structured diffuse intensity distributions characteristic of such materials carefully monitored to investigate the effect that such substitution has upon the band structures and Fermi surfaces (FSs) of the materials. Removal of d electrons via the replacement of Ta ions with lower valent transition metal ions leads to a systematic increase in the radii of the characteristic structured diffuse intensity distribution. Extended Hückel tight binding calculations of the FSs of the doped samples are carried out and used to predict possible nesting wave-vectors. The results are in reasonably good agreement with the radii of the experimentally observed diffuse intensity distributions. 相似文献
4.
Phenomena accompanying electrochemical doping of solid fullerene films with potassium were studied by sputter ion depth profiling
(XPS and SIMS). The potassium distribution was determined, and artifacts associated with possible damage of the layer composition
caused by ion impact were investigated and discussed. To compare the charge transfer while reductive doping is taking place
at fullerene/solution interface with doping from gas phase, model layers were prepared and doped by potassium under UHV conditions.
It was found that sputtering by Ar+ primary ions yields both accurate information on the alkaline metal distribution and on its concentration. Sputtering by
O+ ions led to an enrichment of potassium, apparently due to the reactivity of oxygen with the fullerene matrix. It is shown
that the reductive doping starts at the fullerene/solution interface. The concentration of potassium in the doped films was
found to be lower than expected from the charge transferred during the electrochemical reduction. Other phase transformations
such as hydrogenation are discussed.
Received March 4, 2002; accepted July 26, 2002 相似文献
5.
The not-sufficient-enough conductance of semioxidized protonated polyaniline (PANI) is usually attributed to the presence of ordered quasi-metallic domains surrounded by a poorly conducting amorphous phase. The paper presents experimental results testifying to the existence, in semioxidized PANI, of multilevel redox heterogeneity that crucially effects the conductance magnitude in view of specific topology at which higher-oxidized (conducting) domains are surrounded by less oxidized (poorly conducting) domains and because the PANI conduction is extremely sensitive to the oxidation degree. It is shown experimentally that the interphase doping with metals and degenerate semiconductors of a semioxidized salt of PANI and poly(2-acrylamide-2-methyl-1-propanesulfonic acid) (PAMPSA) with a 1: 2 ratio between PANI and PAMPSA raises the PANI-PAMPSA conductivity by 3–8 orders of magnitude due to the formation near the interface of thin layers whose conductance depends on the work function of the material in contact with PANI-PAMPSA and in extreme cases substantially exceeds the conductance of gold and copper at room temperature. 相似文献
6.
The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl3 gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl3 were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface. 相似文献
7.
A. E. Chmel’ 《Journal of Applied Spectroscopy》1997,64(4):566-568
Using Raman spectroscopy, a quantitative analysis of the distribution of OH− ions on the boundary between a bearing pipe and a glass layer deposited from chlorides in billets for quartz fiber light
guides is carried out. Water penetrated into the light-reflecting shell to a depth of several tenths of a millimeter, depending
on the composition of the doping layer (i.e., ultimately on the temperature of the depsoition process).
A. F. Ioffe Physical-Technical Institute, Academy of Sciences of Russia, 26, Politekhnicheskaya St., St. Petersburg, 194021,
Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 548–550, July–August, 1997. 相似文献
8.
有机薄膜器件负电阻特性的影响因素 总被引:1,自引:1,他引:0
研究了影响有机染料掺杂聚合物薄膜器件负电阻特性的因素,为探索有机负电阻的机理提供实验依据。实验中制备了多种有机染料掺杂聚合物薄膜器件,研究了有机小分子染料、聚合物基体、薄膜组成及厚度、ITO和聚苯胺阳极等对有机染料掺杂聚合物薄膜器件负电阻特性的影响。在室温、大气环境下,所制备的多种有机染料掺杂聚合物器件在所加电压为3~4V时,观察到明显的负电阻特性,电流峰谷比最大约为8。负电阻现象及峰谷比的大小受膜厚和器件的结构、制备工艺等影响。提出用负电阻和二极管并联组成的等效电路模型解释影响负电阻特性的因素,认为负电阻特性与载流子的不平衡注入有关。在此基础上设计、合成了主链含唔二唑电子传输基团的可溶性聚对苯撑乙烯衍生物,该聚合物兼具空穴和电子传输功能,在空气中具有较稳定的N型负电阻特性。进一步控制相关材料和工艺条件,有可能得到易于控制的负阻效应,开发出新型的有机负电阻器件。 相似文献
9.
Kai Kamada Shintaro Udo Shuichi Yamashita Yuko Tsutsumi Yasumichi Matsumoto 《Solid State Ionics》2003,160(3-4):389-394
Quantitative analysis of metal cation doping by solid oxide electrochemical doping (SOED) has been performed under galvanostatic doping conditions. A M–β″-Al2O3 (M=Ag, Na) microelectrode (contact radius: about 10 μm) was used as cation source to attain a homogeneous solid–solid contact between the β″-Al2O3 and doping target. In Ag doping into alkali borate glass, the measured dopant amount closely matched the theoretical value. High Faraday efficiencies of above 90% were obtained. This suggests that the dopant amount can be precisely controlled on a micromole scale by the electric charge during electrolysis. On the other hand, current efficiencies of Na doping into Bi2Sr2CaCu2Oy (BSCCO) ceramics depended on the applied constant current. Efficiencies of above 80% were achieved at a constant current of 10 μA (1.6 A cm−2). The relatively low efficiencies were explained by the saturation of BSCCO grain boundaries with Na. By contrast, excess Na was detected on the anodic surface of ceramics at a constant current of 100 μA (16 A cm−2). In the present study, we demonstrate that SOED enables micromole-scale control over dopant amount. 相似文献
10.
X.S. Cai 《Applied Surface Science》2006,252(8):2776-2781
SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 1020 cm−3 becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing. 相似文献