We discuss the spectral lineshapes of reflectance and modulated reflectance (MR) measurements on optoelectronic device structures such as epi-layers, quantum wells (QWs), vertical-cavity surface emitting-lasers (VCSELs) and resonant-cavity light-emitting diodes (RCLEDs). We consider the various methods for the extraction of built-in electric fields and band-gap energies from Franz-Keldysh oscillations (FKO), using the example of a tensilely strained InGaAs QW system, whose InGaAsP barriers yield strong FKO. We describe how critical point transition energies can be easily obtained by eye from Kramers-Kronig (KK) transforms of low field or QW modulation spectra, using the example of the modulated transmittance spectra of dilute-nitrogen InGaAsN p-i-n structures. We also discuss how the ordinary reflectivity spectrum, usually acquired at the same time as the MR signal, may also be exploited to extract layer thicknesses and compositions, and information about the active QW absorption spectrum in VCSEL and RCLED structures. 相似文献
We have studied the polariton relaxation dynamics in a CdTe microcavity at low temperatures after resonant excitation into the upper polariton branch (UPB). Initially, we have set a negative exciton–cavity detuning, such that the energy difference between the two polariton branches coincides with that of an LO phonon. Our experimental results reveal a sublinear dependence of the integrated emission from the lower polariton branch (LPB) with excitation power. This evidences not only an inefficient LO phonon mediated relaxation from the UPB to the LPB but also a substantial inhibition of polariton relaxation along the LPB. After that, we have progressively reduced the negative detuning, approaching the exciton–cavity resonance. Under these conditions it is possible to observe a nonlinear emission arising from K0 LPB-states similar to that observed after nonresonant excitation. Marked oscillations are present in the time evolution traces, with a period that does not depend on excitation power or detuning. 相似文献
We present a detailed experimental study aimed at demonstrating the polariton nature of the photoluminescence emission in a bulk GaN microcavity grown on (111) silicon. The comparison of the photoluminescence with coincident reflectivity measurements at different temperatures shows an anticrossing behaviour with a Rabi splitting of the order of 35 meV up to room temperature. Relevant confirmations of the mixing between excitons and photons are found in the analysis of the spectral linewidth and of the time resolved kinetics. 相似文献
Open‐access microcavities are emerging as a new approach to confine and engineer light at mode volumes down to the λ3 regime. They offer direct access to a highly confined electromagnetic field while maintaining tunability of the system and flexibility for coupling to a range of matter systems. This article presents a study of coupled cavities, for which the substrates are produced using Focused Ion Beam milling. Based on experimental and theoretical investigation the engineering of the coupling between two microcavities with radius of curvature of 6 m is demonstrated. Details are provided by studying the evolution of spectral, spatial and polarisation properties through the transition from isolated to coupled cavities. Normal mode splittings up to 20 meV are observed for total mode volumes around . This work is of importance for future development of lab‐on‐a‐chip sensors and photonic open‐access devices ranging from polariton systems to quantum simulators.
Photonics applications of silicon are presented. In particular it is demonstrated that silicon when rendered low dimensional, e.g. in form of nanocrystals or quantum wires, can be turned into an active photonic materials which shows light amplification characteristics, non-linear optical effects, photon confinement in both one and two dimensions, photon trapping with evidences of light localization, and gas sensing properties. 相似文献
We have used time-resolved photoluminescence spectroscopy to study the light emission dynamics in a semiconductor microcavity as a function of excitation density and exciton-cavity detuning. We paid special attention to polariton spin relaxation by using circularly polarized excitation. We have found a striking behavior of the photoluminescence degree of polarization, which reaches its maximum value at a finite time. As the excitation density is increased and the system enters the stimulated emission regime, this maximum is followed by a negative dip, whose depth strongly depends on exciton-cavity detuning. 相似文献
The dependence of the transition from the strong-coupling regime to the weak-coupling regime on the polariton spin orientation in a InGaAs semiconductor microcavity is experimental studied by means of time-resolved photoluminescence. Polaritons are created by non-resonant circularly-polarized optical excitation and the power intensity that breaks the strong coupling is found to be much lower for co-polarized polaritons than that for cross-polarized polaritons. Coulomb screening effects alone cannot explain the stronger loss of oscillator strength for majority excitons (co-polarized) and spin-dependent mechanisms are required to justify such behaviour. 相似文献
I review the recent progress made concerning the optical properties of (In,Al,Ga)N-based and (Zn,Mg)O-based epilayers and low dimensional systems like quantum wells, superlattices and microcavities. 相似文献
We derive the effective cavity pumping and decay rates for the master equation of a quantum dot–microcavity system in the presence of N weakly coupled dots. We show that the in-flow of photons is not linked to the out-flow by thermal equilibrium relationships. 相似文献