Metrology of electromagnetic static actuation of MEMS microbridge using atomic force microscopy

The objective of this paper is to describe application of atomic force microscopy (AFM) for characterization and calibration of static deflection of electromagnetically and/or thermally actuated micro-electromechanical (MEMS) bridge. The investigated MEMS structure is formed by a silicon nitride bridge and a thin film metal path enabling electromagnetic and/or thermal deflection actuation. We present how static microbridge deflection can be measured using contact mode AFM technology with resolution of 0.05 nm in the range of up to tens of nm. We also analyze, for very small structure deflections and under defined and controlled load force varied in the range up to ca. 32 nN, properties of thermal and electromagnetical microbridge deflection actuation schemes.     

薄膜型超导红外(光)探测器

在高Tc GdBaCuO超导薄膜上,采用光刻技术分别制成两种不同结构的辐射、热测量器件及2×4集成阵列式微桥器件红外(光)探测器.探测器芯片安装在STD-3型红外探测器杜瓦冷指上.用黑体及波长为0.6328μm的He-Ne激光器辐照器件,系统观测各种器件的特性,其中最好的结果:在10Hz时的噪音等效功率NEP(500,10,1)=3.6×10^-12 WH_z^1/2;探测率D^*(500,10,1)=1.6×10¹⁰ cmH_z^1/2W^-1;响应率R_v=8.2×103VW^-1.另外,多元串接微桥器件出现的多台阶式的特性,可望在红外探测计量及高频方面获得重要应用.