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排序方式: 共有419条查询结果,搜索用时 828 毫秒
1.
The influence of pulse duration on the stress levels in ablation of ceramics: A finite element study
A. Vila Verde 《Applied Surface Science》2006,252(13):4511-4515
We present a finite element model to investigate the dynamic thermal and mechanical response of ceramic materials to pulsed infrared radiation. The model was applied to the specific problem of determining the influence of the pulse duration on the stress levels reached in human dental enamel irradiated by a CO2 laser at 10.6 μm with pulse durations between 0.1 and 100 μs and sub-ablative fluence. Our results indicate that short pulses with durations much larger than the characteristic acoustic relaxation time of the material can still cause high stress transients at the irradiated site, and indicate that pulse durations of the order of 10 μs may be more adequate both for enamel surface modification and for ablation than pulse durations up to 1 μs. The model presented here can easily be modified to investigate the dynamic response of ceramic materials to mid-infrared radiation and help determine optimal pulse durations for specific procedures. 相似文献
2.
3.
F. Prez-Willard C. Sürgers H. Von Lhneysen P. Pfundstein 《Physica E: Low-dimensional Systems and Nanostructures》2004,22(4):872-880
The electronic transport through nanostructured bismuth nanobridges has been investigated at low temperatures (T<2 K) and in magnetic fields B up to 8.5 T. The samples show reproducible resistance fluctuations as a function of B, superimposed on a large magnetoresistance of up to 50%. In addition, time-dependent resistance fluctuations in zero magnetic field demonstrate the presence of bistable scatterers in the constriction region of our samples, which are described by two-level systems. Their dynamics are shown to be sensitive to subtle modifications of the static scatterer configuration in their vicinity, which cannot be detected in the sample magnetofingerprint. 相似文献
4.
Jack Harrowfield Dominique Matt 《Journal of inclusion phenomena and macrocyclic chemistry》2004,50(3-4):133-150
The problems involved in identifying and quantifying labile interactions considered to influence complex compound structures are highlighted through the assessment of four different families of metal complexes for which extensive crystallographic data are available. Modification of the charge distribution within a ligand molecule as a result of coordination is one factor with a number of ramifications. A detailed analysis of evidence for both intra- and inter-molecular attractions in dimethylsulfoxide complexes of metal perchlorates is used to provide a basis for the consideration of weak interactions between complex ions involving forces including phenyl-group attractions, hydrogen bonding and cavity inclusion. 相似文献
5.
Mechanisms of ‘environmental decoherence’ such as surface scattering, Elliot–Yafet process and precession mechanisms, as well as their influence on the spin phase relaxation are considered and compared. It is shown that the ‘spin ballistic’ regime is possible, when the phase relaxation length for the spin part of the wave function (L(s)) is much greater than the phase relaxation length for the ‘orbital part’ (L(e)). In the presence of an additional magnetic field, the spin part of the electron's wave function (WF) acquires a phase shift due to additional spin precession about that field. If the structure length L is chosen to be L(s)>L>L(e), it is possible to ‘wash out’ the quantum interference related to the phase coherence of the ‘orbital part’ of the WF, retaining at the same time that related to the phase coherence of the spin part and, hence, to reveal corresponding conductance oscillations. 相似文献
6.
M. Dubé C. Daneault V. Vuorinen M. Alava M. Rost 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,56(1):15-26
We investigate the structure and dynamics of the interface between
two immiscible liquids in a three-dimensional disordered porous
medium. We apply a phase-field model that includes explicitly
disorder and discuss both spontaneous and forced imbibition.
The structure of the interface is dominated by a length scale
ξ× which arises from liquid conservation. We further show
that disorder in the capillary and permeability act on different
length scales and give rise to different scalings and
structures of the interface properties. We conclude with a
range of applications. 相似文献
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8.
High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions. This indicates that the defects were located in the vicinity of the interface. The change of the peak height and position of the ICTS curves under various bias conditions were qualitatively interpreted by the distribution of the defects and the current flow effect. 相似文献
9.
I. Tsiaoussis N. Frangis C. Manolikas T.A. Nguyen Tan 《Journal of Crystal Growth》2007,300(2):368-373
Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films. 相似文献
10.
The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−Ev)-(0.79−Ev) eV taking into account the forward bias I-V data. The interface state density Nss ranges from 4.93×1010 cm−2 eV−1 in (0.79−Ev) eV to 3.67×1013 cm−2 eV−1 in (0.53−Ev) eV. Furthermore, the relaxation ranges from 3.80×10−3 s in (0.53−Ev) eV to 4.21×10−4 s in (0.79−Ev) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap. 相似文献