两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

WOx/TiO2光催化剂的可见光催化活性机理探讨

采用磁控溅射技术在用浸渍提拉法制得的TiO2薄膜上，溅射氧化钨层,通过气相反应中光催化降解二甲苯的实验表明，WOx/TiO2薄膜具有可见光活性.通过UV-Vis吸收光谱、X射线光电子能谱（XPS）等方法对其可见光活性的机理进行探索.UV-Vis吸收光谱表明WOx,TiO2对可见光响应的范围有一定的扩展,吸收强度增加.XPS表明WOx/TiO2薄膜表面形成了明显的W杂质能级和Ti缺陷能级,这是WOx/TiO2在可见光范围有一吸收的主要原因,也是光催化剂具有可见光活性的必要条件之一，同时杂质能级的存在使半导体费米能级上移,载流子增加,光催化效率提高.     

Influence of target surface degradation on the properties of r.f. magnetron‐sputtered calcium phosphate coatings

This paper reports a detailed study of how repeated r.f. magnetron sputtering from a hydroxyapatite (HA) powder target affects the nature and reproducibility of a sequential series of thin‐film coatings deposited onto Ti6Al4V substrates. An evaluation of the effective lifespan of the HA sputter targets and the reproducibility of the calcium phosphate (CaP) coatings produced from them has been made from Fourier transform infrared spectroscopy, XPS and, as appropriate, atomic force microscopy and SEM/energy dispersive x‐ray analyses. The annulus region of the target surface, from which sputtering under r.f. magnetron conditions normally occurs, showed severe surface degradation after only one deposition run, as indicated by significant PO₄^3? and OH^? depletion. This deterioration continued after each subsequent deposition cycle but to a much lesser extent than that observed in the initial sputtering period. The layers produced from all of the sputter runs contained the expected Ca²⁺ and PO₄^3? species characteristic of a CaP system but were OH^? deficient in the as‐deposited state. However, the chemical and morphological properties of the coatings did not change significantly until after the third consecutive sputter cycle. Hence, these data indicate that, even though a significant level of degradation of the HA target occurs at the outset of the sputtering procedure, the general plasma conditions employed here have a dominant influence on the coating properties until a critical degradation condition is met. As such, the compacted HA powder targets of interest can have a life‐cycle greater than single usage without detriment to the chemistry and morphology of the coatings produced from them. Copyright © 2003 John Wiley & Sons, Ltd.     

Deposition of complex multielemental thin films

Modern condensed-matter physics is increasingly concerned with the design, synthesis, analysis, and exploitation of chemically complex materials and structures. Complex metal oxides and strongly correlated electron systems such as YBa₂Cu₃O_7−x and La_1−xSr_xMnO₃ are paradigmatic examples. Their production in the form of high-quality thin films is of both technological and fundamental importance and has stimulated a concerted effort in the last two decades to find and optimize efficient techniques to this end. This review discusses the physics behind and the requirements for synthesizing high-quality films of such materials and examines fundamental aspects of the growth processes associated with magnetron sputtering and pulsed laser deposition, the two techniques which presently offer the best solutions in this burgeoning field.     

Surface transient effects in ultralow‐energy Cs+ sputtering of Si

This study examines the dependence of the sputter rate and the transient width (z_tr) as a function of Cs⁺ primary ion energy (impact energy (E_p) = 320 eV, 500 eV and 1 keV) and incident angles between 0 and 70° . The instrument used was the ATOMIKA 4500 SIMS depth profiler and the sample was Si with ten delta layers of Si_0.7 Ge_0.3. We observed the narrowest transient widths of between 1.4 and 2.0 nm apparent depth. This was achieved at incident angles (θ) of 30–50° . An extended transient effect was observed when profiled at θ > 50° . Below this incident angle, the transient width is less than twice the penetration depth (z_tr < 2R_norm). At minimum z_tr, z_tr ≈ R_norm. The detection sensitivity is best achieved at θ ≈ 30° for all energies investigated. The sputter rate is lowest at normal incidence, rising gradually to a maximum at θ ≈ 50–60° . This is similar to that observed with ultralow‐energy O₂⁺ primary ion beams. 1 At ultralow energies, reducing E_p does not have a significant effect in reducing z_tr. We conclude that for E_p < 1 keV, the optimum condition to achieve minimum z_tr while maintaining good sensitivity and high sputter rate is at θ ≈ 30° . Copyright © 2007 John Wiley & Sons, Ltd.     

Thickness effect on the band gap of magnetron sputtered Pb45Se45O10 thin films on Si

Oxygen doped PbSe thin films with different thickness were grown on the Si (100) substrates by magnetron sputtering, and characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and physical properties measurement system. As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76% was obtained. According to the density functional theory calculations and the experimental results, the band gap of the PbSe thin films decreased from 0.278 eV to 0.21 eV when doped with oxygen. Doping with oxygen during the deposition process is a viable way to prepare PbSe thin films with a tunable band gap. The band gap increased almost linearly with the lattice constant, confirmed by the calculated and experimental results.     

Design of magnet and control of the beam emittance for Penning H- ion source

The design requirement and principle of the deflection magnet for Magnetron and Penning H- ion source are discussed.It is proved that there exists a maximum emittance for the beam that may be transformed by the magnet into a state with equal Twiss parameters of αr=αy and βr =βy,which is the requisite condition to get a minimum emittance at the entrance of RFQ after transporting by a LEBT with solenoids.For this maximum emittance,the corresponding magnetic field gradient index is 1.     

8 mm二次谐波回旋速调管放大器双阳极磁控注入电子枪的设计

 计算了8 mm二次谐波回旋速调管双阳极电子枪的设计参数，根据这些参数，采用EGUN软件进行模拟和优化，设计出了一只双阳极磁控注入电子枪，该枪的电子束纵横速度比为1.45，速度零散为5.4%，并讨论了电极形状、磁场分布、电流、控制极电压和第二阳极电压对电子注性能的影响，结果发现电子注对这些影响因子非常敏感，设计中应对它们进行充分优化。     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

直流反应磁控溅射制备掺铟ZnO透明导电薄膜的研究

本文介绍了掺铟ZnO透明导电膜的制备工艺.并应用半导体物理理论分析了薄膜的导电机理,用Drude理论建立了物理模型,分析与计算了薄膜从可见到红外光波段的光学性能,结果表明,理论计算与实测值两者符合得较好.