Fourier-Feynman transform, convolution and first variation

We examine several interesting relationships and expressions involving Fourier-Feynman transform, convolution product and first variation for functionals in the Fresnel class F(B) of an abstract Wiener space B. We also prove a translation theorem and Parseval's identity for the analytic Feynman integral. This revised version was published online in June 2006 with corrections to the Cover Date.     

Maximum-entropy data analysis

The reconstruction of physical quantities from (computer-) experimental data is very often hampered by the presence of noise, insufficient information and above all by the ill-posed nature of the underlying inversion problem. It will be demonstrated that the maximum entropy concepts is particularly suited for this type of data-analysis problems. It is based on Bayesian statistics and provides a consistent probabilistic theory to obtain unbiased results, independent of any model assumptions. This is particularly desirable if there is no additional information to justify these hypotheses. If, on the other hand, additional prior knowledge is available, it can be effectively incorporated into the computation, leading to more stringent confidence intervals.     

Superconductivity in the intermetallic compound YRhAl

The intermetallic compound, YRhAl, has been prepared and is found to be isomorphic with RRhAl (R=Pr, Nd, Gd, Ho and Tm) compounds crystallizing in the orthorhombic TiNiSi-type structure (space group Pnma). Heat capacity and electrical resistivity measurements in the He-3 temperature range reveal that this compound is superconducting with a transition temperature, T_c, of 0.9 K. The electronic specific heat coefficient, γ, and the Debye temperature are found to be 6.1 mJ/mol K and 197 K, respectively. The specific heat jump at the superconducting transition is found to be consistent with the BCS weak-coupling limit. This combined with the earlier observation of superconductivity in LaRhAl (T_c=2.4 K) having a different structure than that of YRhAl, suggests that the underlying structure is not very crucial for the occurrence of superconductivity in RRhAl series of compounds.     

一种拟Grünwald插值算子的L_p收敛速度

1引言 2006年3月 高等学校计算数学学报 设f(x)为卜1，1}上的连续函数，则以第二类Chebyshev多项式认(x)(Un(eoso)= 烈共坐)的全部零点{ 乙工工1口 式为 其中 k x无=Cos了一下丁7r 了L十1 犷_，为插值结点组的了的Gr如wald插值多项 G。(，，x)=艺了(x、)‘孟(x)， n. 11 一一 k     

Electronic Structure and Magnetic Properties of SmCo7-xZrx

The electronic structure and magnetism of SmCo_7-xZr_x alloy are investigated using the spin-polarized MS-X. method. The results show that a few of electrons are transferred to the Sm(5d⁰) orbital due to orbital hybridization between Sm and Co atoms. The exchange interactions between 3d and 5d electrons are more important than the polarization effects of the conductive electrons, thus it is the main reason resulting in the long-range ferromagnetic order in SmCo_7-xZr_x. The Curie temperature of SmCo_7-xZr_x is generally lower than that of corresponding pure Co, which may be explained by the weaker average coupling strength between Co lattices due to some negative couplings mainly occurring of 2e site. The calculated results for the Sm₅Co₃₂Zr₂ cluster may lead to a better understanding of why SmCo_7-xZr_x is stable phase. Since the spin-up DOS peak of d electrons at E_F arises and the bonding of electrons at E_F strengthens with increasing Zr concentration, which results in the internal energy of the system decrease, the stable ferromagnetic order forms in SmCo_7-xZr_x.     

In situ transmission electron microscopy study of the nucleation and grain growth of Ge2Sb2Te5 thin films

The nucleation and grain growth of the Ge₂Sb₂Te₅ (GST) thin films were studied using high voltage electron microscope operated at 1250 kV. As a result, we have found that 2 nm-sized nucleus forms as a cluster which atoms are arranged regularly at the stage of nucleation prior to the formation of grains having crystal structure. The high-resolution transmission electron microscopy study and fast-Fourier transformations revealed that coexistence of face-centered-cubic (FCC) and hexagonal structure occurs, and formation of twin defect is found in the hexagonal structure during the grain growth as the annealing temperature is increased. GST grain having the hexagonal structure grow from the surface, and the growth proceeded perpendicular to the [0 0 0 1], namely the path parallel to the (0 0 0 1) plane. Consequently, grain growth to a large-scale result in a lengthened shape.     

Photo-enhanced etching ofn-Si

The etch rate ofn-type Si in diluted HF solutions was investigated as a function of the bias voltage applied to the Si/electrolyte interface in the dark and under illumination. It was observed that the etch rate depends very sensitively on the minority carrier flow through this interface. For an illumination intensity of 5.3×10¹⁶ photons/cm² s (=550nm) and the depleted Si/electrolyte interface biased slightly (less than 1 V) in reverse, the etch rate is increased by a factor of more than 1000 as compared to the etch rate under open-circuit condition. This effect can be used to create etch patterns during device processing without prior masking the semiconductors. Using the same effect it should be possible to trim the thickness of Si layers on (semi-) insulating substrates for the fabrication of enhancement-mode FETs.     

On the impeded growth of oxide films on Si in N2O ambient

Growth kinetics of thin oxide films on silicon in nitrous oxide were investigated in the very early stage of the process. It was found that the resistance to oxidation reaches an almost stationary value for about 10 s at 1100 °C. The observation is explained by the incorporation of nitrogen atoms at the interface in the film, which impede the further growth. Received: 24 September 1998 / Accepted: 9 December 1998 / Published online: 24 March 1999     

Lp径向Blaschke-Minkowski同态的Lp对偶几何表面积

2006年,Schuster提出了径向Blaschke-Minkowski同态的概念.随后,汪卫等人将其推广到L_p径向Blaschke-Minkowski同态.本文结合L_p对偶几何表面积,建立了L_p径向Blaschke-Minkowski同态的若干不等式,包括Brunn-Minkowski型不等式和单调不等式.并给出了L_p径向Blaschke-Minkowski同态的Busemann-Petty问题的肯定和否定形式.     

Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering

We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface.