Yellow‐light‐emitting cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative: Its synthesis and optical properties

A soluble cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative ( 9 ) was synthesized and characterized. Comparison between 9 and its model compound ( 10 ) showed that the chromophore in 9 remained to be well defined as a result of a π‐conjugation interruption at adjacent m‐phenylene units. The attachment of a cyano substituent only at the β position of the vinylene allowed the maximum electronic impact of the cyano group on the optical properties of the poly(p‐phenylene vinylene) material. At a low temperature (?108 or ?198 °C), the vibronic structures of 9 and 10 were partially resolved. The absorption and emission spectra of a film of 9 were less temperature‐dependent than those of a film of 10 , indicating that the former had a lower tendency to aggregate. A light‐emitting diode (LED) based on 9 emitted yellow light (λ_max ≈ 578 nm) with an external quantum efficiency of 0.03%. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3149–3158, 2003     

Single LED based dual wavelength referenced optical fibre sensor system using intensity modulation

An intensity-modulated optical fibre sensor system is described which employs a single LED source to provide the measurand and the reference signals with two separate wavelength bands. The allocated wavelength bands are selected to minimize any differential intensity effects that may arise from LED thermal variations. The sensor system, comprising a transceiver unit connected to an optical displacement sensor using a single optical fibre, provides an output fully referenced for all major common-mode variations that are likely to occur. Performance characteristics for the prototype system are reported which show a linear displacement range of over 20 mm.     

Ab initio study of [001] GaN nanowires

We present the results of a study of structural, electronic, and optical properties of the unpassivated and H-passivated GaN nanowires having diameters in the range of 3.29 to 18.33 Å grown along [001] direction by employing the first-principles pseudopotential method within density functional theory in the local density approximation. Two types of nanowires having hexagonal and triangular cross-sections have been investigated. The binding energy increases with the diameter of the nanowire because of a decrease in the relative number of the unsaturated surface bonds. The binding energies of the triangular cross-sectional nanowires are somewhat smaller than those of the hexagonal cross-sectional nanowires in accordance with the Wulff’s rule except the smallest diameter triangular cross-sectional nanowire, where the binding energy is comparable with the corresponding hexagonal cross-sectional nanowires. The band gap varies rapidly with the diameter of the nanowire in the case of the smaller diameter nanowires, and quite slowly for the larger diameter nanowires. After atomic relaxation, appreciable distortion occurs in the nanowires, where the chains of Ga- and N-atoms are curved in different directions. These distortions are reduced with the diameters of the nanowires. The optical absorption in the GaN nanowires is quite strong in the ultra-violet region but an appreciable absorption is also present in the visible region for the larger diameter nanowires. The present results indicate the possibility of engineering the properties of nanowires by manipulating their diameter and surface structure. The presently predicted smaller diameter GaN nanowire possessing the triangular cross-section should be observable in the experiments.     

Photo-reception properties of common LEDs

The article proves that common LEDs may act as photodetectors with limited sensitivity, if they are polarized with an appropriate reverse voltage. The measured responsivities are ranged between 0.002 and 0.156 A/W and they depend on the LED type. The only one exception are white (phosphorescent) LEDs which do not exhibit any photosensitivity. There have also shown that a bandwidth of LEDs, which were examined in a role of photodetectors, is of a few tens of MHz, which is an order of magnitude greater than their modulation bandwidth as transmitters. The reasons of the observed LEDs behaviour are explained theoretically. The obtained results are indicated that some of them may be used as both transmitters and receivers in the VLC links working in a bi-directional half-duplex mode.     

量子阱层和垒层具有不同Al组分的270/290/330nm AlGaN基深紫外LED光电性能

为了研究AlGaN量子阱层和垒层中Al组分不同对AlGaN基深紫外发光二极管(LED)光电性能的影响,本文利用MOCVD生长、光刻和干法刻蚀工艺制备了AlGaN量子阱层和垒层具有不同Al组分的270/290/330nm深紫外LED,通过实验和数值模拟计算方法发现,量子阱层和垒层中具有低Al组分紫外LED的AlGaN材料具有较低的位错密度、较高的光输出功率和外量子效率。通过电流-电压(I-V)曲线拟合出的较大的理想因子(3.5)和能带结构图表明,AlGaN深紫外LED的电流产生是隧穿机制占据主导作用,这是因为高Al组分AlGaN量子阱中强极化场造成了有源层区域较大的能带弯曲和电势降。     

In2BP3O12:Cr3+宽带近红外荧光粉的发光性能及应用研究※

近红外光谱技术在安防监控、食品检测、生物成像、农业等领域具有重要应用价值, 而开发出紧凑高效的近红外光源是其大规模商业应用的前提. 荧光粉转换型近红外发光二极管(light emitting diodes, LED)光源具有结构紧凑、成本低、使用寿命长、发射光谱可调等优点, 因此近些年受到广泛关注, 其关键就在于开发出能被蓝光有效激发的高性能近红外荧光粉. 本工作利用高温固相法制备了一种新型宽带近红外荧光粉In₂BP₃O₁₂:Cr³⁺, 在480 nm激发下, 荧光粉发射峰值位于950 nm, 光谱覆盖了750~1350 nm范围, 半峰宽达到210 nm. 采用该荧光粉与商用蓝光InGaN LED芯片封装, 获得了具有宽带发射的近红外LED光源, 在60 mA的驱动电流下, 近红外光辐射功率为5 mW. 当采用该光源照射人的手掌, 用近红外电感耦合器(charge coupled device, CCD)相机能够对手掌中的血管进行清晰的成像. 上述结果表明该近红外荧光粉可用于制备基于蓝光芯片的宽带近红外LED光源, 并在生物医学等领域具有潜在应用前景.     

A near-infrared phosphor doped with Cr3+ towards zero-thermal-quenching for high-power LEDs

Cr³⁺-doped phosphors show significant application potential in near-infrared (NIR) light-emitting diodes (LEDs). However, the development of thermally stable and efficient NIR phosphors still faces enormous challenges. Herein, NIR phosphors K₂NaMF₆:Cr³⁺ (M³⁺ = Al³⁺, Ga³⁺, and In³⁺) were synthesized by the hydrothermal method. The represented K₂NaAlF₆:Cr³⁺ phosphor can be effectively excited by blue light (～430 nm) to present broadband emission at half a maximum of 96 nm peaking at ～ 728 nm. Meanwhile, the K₂NaAlF₆:Cr³⁺ phosphor exhibits excellent internal quantum efficiency (IQE = 68.08%) and nearly zero-thermal-quenching behavior, which is able to maintain 96.5% emission intensity at 150 °C of the initial value at 25 °C. The NIR phosphor-converted LED was fabricated based on K₂NaAlF₆:Cr³⁺ phosphor and a blue LED chip, showing a NIR output power of 394.39 mW at 300 mA with a high photoelectric conversion efficiency of 10.9% at 20 mA. Using the high-power NIR LED as a lighting source, transparent and quick veins imaging as well as non-destructive testing were demonstrated, suggesting the NIR phosphor has a wide range of practical applications.     

2D sp2 Carbon‐Conjugated Porphyrin Covalent Organic Framework for Cooperative Photocatalysis with TEMPO

2D covalent organic frameworks (COFs) are receiving ongoing attention in semiconductor photocatalysis. Herein, we present a photocatalytic selective chemical transformation by combining sp² carbon‐conjugated porphyrin‐based covalent organic framework (Por‐sp²c‐COF) photocatalysis with TEMPO catalysis illuminated by 623 nm red light‐emitting diodes (LEDs). Highly selective conversion of amines into imines was swiftly afforded in minutes. Specifically, the π‐conjugation of porphyrin linker leads to extensive absorption of red light; the sp² ?C=C? double bonds linkage ensures the stability of Por‐sp²c‐COF under high concentrations of amine. Most importantly, we found that crystalline framework of Por‐sp²c‐COF is pivotal for cooperative photocatalysis with (2,2,6,6‐tetramethylpiperidin‐1‐yl)oxyl (TEMPO). This work foreshadows that the outstanding hallmarks of COFs, particularly crystallinity, could be exploited to address energy and environmental challenges by cooperative photocatalysis.