Silicon-Based Integrated Optic Pressure Sensor Using Intermodal Interference between TM-Like and TE-Like Modes

In this paper, a silicon-based integrated optic pressure sensor using an intermodal interference between the fundamental TM-like and TE-like modes is described. The sensor consists of a micromachined rectangular diaphragm and a straight polystyrene optical waveguide passing over the diaphragm. Its sensitivity is theoretically known to be strongly dependent on the position of the waveguide over the diaphragm. To experimentally investigate such dependence, we fabricated a sensor with a 1.2 mm ×10 mm ×20 μm diaphragm, over which waveguides were placed at 50 μm intervals. The measured phase sensitivity was 98 mrad/kPa for the waveguide nearest to the diaphragm edge. The measurement was also carried out for the other waveguides. As theoretically expected, the largest sensitivity was obtained for the waveguide nearest to the edge.     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

用楔形柱面光纤微透镜耦合的1.3μm SOA组件

运用激光模式耦合理论分析了半导体光放大器(SOA)与单模通信光纤的连接损耗,并设计制作了楔形柱面光纤微透镜用来实现两者的模斑匹配,有效地降低了器件的光耦合损耗.本文介绍了楔形柱面光纤微透镜耦合的1.3 μm半导体光放大器(SOA)组件及其制作方法.该组件的最大增益不小于14 dB,其偏振灵敏度小于1 dB,增益波动不大于0.5 dB.     

Efficient synthesis of an aldehyde‐capped polythiophene containing fluorinated electron‐withdrawing groups

To incorporate an acceptor type polythiophene segment onto a supramolecular block copolymer for potential light harvesting applications, effective synthetic routes for the end‐functionalized and acceptor‐substituted polythiophenes are critical. The Ullmann coupling reaction can be utilized to obtain electron‐deficient polythiophenes and to attach terminal thiophene units that carry functional groups. In this article, the reactions involving a 2,5‐dibromothiophene monomer containing an electron‐withdrawing fluorinated ester and 5‐bromo‐2‐thiophenecarboxaldehyde (the end‐capper) were studied in detail. It was found that the Ullmann coupling reaction of the dibromide is very fast (completed in a few minutes) and the terminal bromine group does not survive long under the reaction condition. These findings lead to the development of an effective procedure for aldehyde end‐capping of electron‐deficient polythiophenes. Polymers with molecular weights around 4000 Da are routinely obtained. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 41–47, 2007     

Existence Results for Semilinear Neutral Functional Differential Inclusions via Analytic Semigroups

In this paper we prove existence results for semilinear neutral functional differential inclusions with finite or infinite delay in Banach spaces. Our theory makes use of analytic semigroups and fractional powers of closed operators, integrated semigroups and cosine families.      

Organometallic chemistry related to applications for microelectronics in Japan

This is meant to be a brief overview of the developments of research activities in Japan on organometallic compounds related to their use in electronic and optoelectronic devices. The importance of organometallic compounds in the deposition of metal and semiconductor films for the fabrication of many electronic and opto-electronic devices cannot be exaggerated. Their scope has now extended to thin-film electronic ceramics and high-temperature oxide superconductors. A variety of organometallic compounds have been used as source materials in many types of processing procedures, such as metal–organic chemical vapor deposition (MOCVD), metalorganic vapor-phase epitaxy (MOVPE), metal–organic molecular-beam epitaxy (MOMBE), etc. Deposited materials include silicon, Group III–V and II–VI compound semiconductors, metals, superconducting oxides and other inorganic materials. Organometallic compounds are utilized as such in many electronic and optoelectronic devices; examples are conducting and semiconducting materials, photovoltaic, photochromic, electrochromic and nonlinear optical materials. This review consists of two parts: (I) research related to the fabrication of semiconductor, metal and inorganic materials; and (II) research related to the direct use of organometallic materials and basic fundamental research.     

房水中烯醇化酶总活性的联酶荧光法测定

采用酶联反应荧光法测定样品中烯醇化酶的总活性。方法最低检出限为０２ＩＵ／Ｌ，在０２０～３５ＩＵ／Ｌ范围标准曲线呈线性，γ＞０９９７，回收率达９０％，相对标准偏差＜１０％。对临床确诊的视网膜母细胞瘤进行了初步探讨，检验结果的特异性较高。     

Memory management optimization problems for integrated circuit simulators

In hardware design, it is necessary to simulate the anticipated behavior of the integrated circuit before it is actually cast in silicon. As simulation procedures are long due to the great number of tests to be performed, optimization of the simulation code is of prime importance. This paper describes two mathematical models for the minimization of the memory access times for a cycle-based simulator.An integrated circuit being viewed as a directed acyclic graph, the problem consists in building a graph order on the vertices, compatible with the relation order induced by the graph, in order to minimize a cost function that represents the memory access time. For both proposed cost functions, we show that the corresponding problems are NP-complete. However, we show that the special cases where the graphs are in-trees or out-trees can be solved in polynomial time.     

基于企业微信平台和在线教育综合平台的线上教学实践

In order to achieve "postponement of school without suspension of learning" during the prevention and control of new coronavirus pneumonia, the online teaching strategy was constructed based on Enterprise WeChat and Integrated Online Education Platform for the online teaching of Separation Science and Technology. The student-centered teaching methods were applied in online teaching process.