Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

用楔形柱面光纤微透镜耦合的1.3μm SOA组件

运用激光模式耦合理论分析了半导体光放大器(SOA)与单模通信光纤的连接损耗,并设计制作了楔形柱面光纤微透镜用来实现两者的模斑匹配,有效地降低了器件的光耦合损耗.本文介绍了楔形柱面光纤微透镜耦合的1.3 μm半导体光放大器(SOA)组件及其制作方法.该组件的最大增益不小于14 dB,其偏振灵敏度小于1 dB,增益波动不大于0.5 dB.     

Existence Results for Semilinear Neutral Functional Differential Inclusions via Analytic Semigroups

In this paper we prove existence results for semilinear neutral functional differential inclusions with finite or infinite delay in Banach spaces. Our theory makes use of analytic semigroups and fractional powers of closed operators, integrated semigroups and cosine families.      

房水中烯醇化酶总活性的联酶荧光法测定

采用酶联反应荧光法测定样品中烯醇化酶的总活性。方法最低检出限为０２ＩＵ／Ｌ，在０２０～３５ＩＵ／Ｌ范围标准曲线呈线性，γ＞０９９７，回收率达９０％，相对标准偏差＜１０％。对临床确诊的视网膜母细胞瘤进行了初步探讨，检验结果的特异性较高。     

Memory management optimization problems for integrated circuit simulators

In hardware design, it is necessary to simulate the anticipated behavior of the integrated circuit before it is actually cast in silicon. As simulation procedures are long due to the great number of tests to be performed, optimization of the simulation code is of prime importance. This paper describes two mathematical models for the minimization of the memory access times for a cycle-based simulator.An integrated circuit being viewed as a directed acyclic graph, the problem consists in building a graph order on the vertices, compatible with the relation order induced by the graph, in order to minimize a cost function that represents the memory access time. For both proposed cost functions, we show that the corresponding problems are NP-complete. However, we show that the special cases where the graphs are in-trees or out-trees can be solved in polynomial time.     

Circuit analysis of the compound quasi-optical power combiner

In 1991, we developed a new type of quasi-optical power combiner, called a compound quasi-optical power combiner, at Ka-band. In this paper, the circuit of such a compound quasi-optical power combiner is analysed. Its equivalent circuit model is proposed. The circuit equations, the balance condition, the injection locking and the stabilized condition of the compound quasi-optical power combiner are studed by the equivalent circuit model. As an example, a compound quasi-optical power combiner which consists of two single—cavity, two—device power combiners is analysed     

The interlace polynomial of a graph

Motivated by circle graphs, and the enumeration of Euler circuits, we define a one-variable “interlace polynomial” for any graph. The polynomial satisfies a beautiful and unexpected reduction relation, quite different from the cut and fuse reduction characterizing the Tutte polynomial.It emerges that the interlace graph polynomial may be viewed as a special case of the Martin polynomial of an isotropic system, which underlies its connections with the circuit partition polynomial and the Kauffman brackets of a link diagram. The graph polynomial, in addition to being perhaps more broadly accessible than the Martin polynomial for isotropic systems, also has a two-variable generalization that is unknown for the Martin polynomial. We consider extremal properties of the interlace polynomial, its values for various special graphs, and evaluations which relate to basic graph properties such as the component and independence numbers.     

集成微管路离子选择电极功能块研究

本文对微型管状离子选择电极在流动条件下的电化学特征进行了研究,并设计了新的集成微管路离子选择以电极功能块。用此微型装置测定了土壤、血清、水和药物中的K~+、Na~+、pH、Cl~-、F~-、阿托品、东茛菪碱,并和各种标准方法作了比较,获得满意分析结果。     

Physically based molecular device model in a transient circuit simulator

Two efficient, physically based models for the real-time simulation of molecular device characteristics of single molecules are developed. These models assume that through-molecule tunnelling creates a steady-state Lorentzian distribution of excess electron density on the molecule and provides for smooth transitions for the electronic degrees of freedom between the tunnelling, molecular-excitation, and charge-hopping transport regimes. They are implemented in the fREEDA™ transient circuit simulator to allow for the full integration of nanoscopic molecular devices in standard packages that simulate entire devices including CMOS circuitry. Methods are presented to estimate the parameters used in the models via either direct experimental measurement or density-functional calculations. The models require 6–8 orders of magnitude less computer time than do full a priori simulations of the properties of molecular components. Consequently, molecular components can be efficiently implemented in circuit simulators. The molecular-component models are tested by comparison with experimental results reported for 1,4-benzenedithiol.