Topochemically Controlled Redox Reactions in the System In/Sn/Cl

The difference in reactivity of the two modifications of InCl in solid state reactions with SnCl₂ is discussed. It is explained on the basis of semi‐empirical and ab initio calculations giving the density of states diagrams of InCl and the energies of possible disproportionation reactions. Their general features are discussed on the basis of a simple bonding picture for open‐packed structures involving inert pair elements. A detailed analysis of the DOS distribution allows to pinpoint the observed redox instability to a specific structural feature of α‐InCl.     

Surface reconstructions of InGaAs alloys

The surface reconstructions of In_xGa_1−xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the In_xGa_1−xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence.     

Indium(I) iodide as a radical initiator: intramolecular cyclization of functionalized bromo-alkynes to substituted tetrahydrofurans

Aryl substituted α-carbonyl bromo-alkynes undergo facile cyclizations to the corresponding substituted 4-methylene-tetrahydrofurans using indium(I) iodide in acetonitrile under sonication in high yields. The reaction is predicted to proceed via a radical process initiated by InI and a plausible radical pathway is suggested.     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

Opening of epoxides with aromatic amines promoted by indium tribromide: a mild and efficient method for the synthesis of β-amino alcohols

A mild and efficient synthesis of β-amino alcohols by aminolysis of epoxides promoted by indium tribromide is described. The methodology is regio- and chemoselective and works well with independence of the epoxide or the aromatic amine used. In addition, the reaction can be carried out in a wide variety of undried solvents under air.     

Surface tension and density measurements for indium and uranium using a sessile-drop apparatus with glow discharge cleaning

The sessile-drop method is used to measure the surface tension and density of liquid indium and uranium under high vacuum. Measurements are made over the temperature range 156–500°C for In and at the melting point for U. Surface oxides are efficiently removed with a glow discharge system. Drop profiles are captured by photograph and processed using nonlinear regression to yield the surface tension and density. In this regression procedure, normal distances from calculated profiles to data points are minimized. For indium, the density and surface tension measurements yield _mp = 7.05 × 10³kg/m³, d/dT = −0.776 kg/m³·°C, and γ_mp = 0.568 N/m, dγ/dT = −9.45 × 10⁻⁵ N/m·°C. The results for uranium at the melting point are _mp = 17.47 × 10³ kg/m³ and γ_mp = 1.653 N/m.     

Study on the electroreduction of In(III) ions at gold from acidic bromide solutions by the rotating ring-disc electrode technique

The mechanism of the indium electrodeposition on gold from acidic KBr solutions has been investigated by means of the rotating ring-disc electrode technique. The measurements showed that the overall electrode reaction In(III) + 3 e In consists of two successive charge transfer steps, i.e. In(III) + 2 e In(I) and In(I) + e In, with soluble monovalent indium as an intermediate. The current efficiency for In(I) generation under steady-state conditions is 100% in the case of low disc current densities. The disproportionation of In(I) in the bulk of solution occurs in slightly acidified solutions,pH=2, in addition to the In(I) electrochemical reduction. Based on the ring current transients, it was established that the two-electron transfer step is preceded by the formation of a thin passive film of indium metal.

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Untersuchung der elektrochemischen Reduktion von In(III)-Ionen an Gold in sauren Bromidlösungen mit der rotierenden Ring-Scheiben-Elektrode

Zusammenfassung Mit Hilfe der rotierenden Ring-Scheiben-Elektrode wurde der Mechanismus der kathodischen Abscheidung von Indium auf Gold in sauren KBr-Lösungen untersucht. Aus den Messungen folgt, daß die Bruttoreaktion In(III) + 3e In über zwei aufeinanderfolgende Durchtrittsreaktionen, In(III) + 2 e In(I) und In(I) + e In, mit löslichem einwertigem Indium als Zwischenprodukt abläuft. Bei kleinen Stromdichten werden die In(I)-Ionen mit 100%iger Stromausbeute erzeugt. In schwächer sauren Lösungen (pH=2) konnte außer der elektrochemischen Reduktion von In(I) zusätzlich dessen Disproportionierung innerhalb der Lösung ermittelt werden. Auf Grund der Ringstrom-Zeit-Kurven wurde auch festgestellt, daß die Bildung von einer dünnen In-Metallschicht, die ein passives Verhalten aufweist, dem Zweielektronenübergang vorangegangen ist.

     

A study on the utility of bismuth-film electrodes for the determination of In(III) in the presence of Pb(II) and Cd(II) by square wave anodic stripping voltammetry

This work is an investigation into the utility of bismuth-film electrodes (BiFEs) for the determination of indium in the presence of cadmium and lead by square wave anodic stripping voltammetry (SWASV). The purpose of this study was to demonstrate that, after judicious choice of the associated chemical and instrumental conditions, it is possible to achieve satisfactory separation of the relevant stripping peak and, thus, to determine simultaneously trace concentrations of cadmium, lead and indium. It was conclusively demonstrated that a BiFE performed better than the equivalent mercury-film electrode (MFE) in this particular application.     

Synthesis and molecular structures of dialkylselenonium methylide complexes of indium tribromide

The reaction of bromomethyl-dibromo-indium(III), Br₂InCH₂Br with dialkylselenides, R¹SeR² (R¹ = CH₃, R² = CH₂C₆H₅; R¹ = C₂H₅, R² = CH₂C₆H₅; R¹ = R² = CH₂C₆H₅) afforded the corresponding dialkylselenonium methylide complexes of indium tribromide, Br₃InCH₂SeR¹R², which were fully characterized by NMR spectroscopy and single crystal X-ray diffraction studies.     

Atomic structure of InAs quantum dots on GaAs

In recent years, the self-assembled growth of semiconductor nanostructures, that show quantum size effects, has been of considerable interest. Laser devices operating with self-assembled InAs quantum dots (QDs) embedded in GaAs have been demonstrated. Here, we report on the InAs/GaAs system and raise the question of how the shape of the QDs changes with the orientation of the GaAs substrate. The growth of the InAs QDs is understood in terms of the Stranski–Krastanow growth mode. For modeling the growth process, the shape and atomic structure of the QDs have to be known. This is a difficult task for such embedded entities.

In our approach, InAs is grown by molecular beam epitaxy on GaAs until self-assembled QDs are formed. At this point the growth is interrupted and atomically resolved scanning tunneling microscopy (STM) images are acquired. We used preparation parameters known from the numerous publications on InAs/GaAs. In order to learn more about the self-assemblage process we studied QD formation on different GaAs(0 0 1), (1 1 3)A, and ( )B substrates. From the atomically resolved STM images we could determine the shape of the QDs. The quantum “dots” are generally rather flat entities better characterized as “lenses”. In order to achieve this flatness, the QDs are terminated by high-index bounding facets on low-index substrates and vice versa. Our results will be summarized in comparison with the existing literature.