Electron transport in corona charged 12 μm teflon FEP with saturable deep traps

Surface-potential measurements carried out in negatively corona charged 12 m samples of fluorethylenepropylene (Teflon FEP) showed the following characteristics: 1) with a constant charging current, the potential initially rises linearly, and then sublinearly; 2) the potential saturates irrespectively of the charging process and 3) practically no potential decay is observed after switching off the corona. These results have been interpreted in terms of an usual model (field-independent trapping time) for charge transport in insulators, with saturable deep traps in both surface and bulk of the sample and a relatively high electron mobility in order to prevent free-space charge accumulation. The partial differential equations derived from the model are numerically solved and it was found that only the product of the mobility with the trapping time is relevant to the fitting of experimental results, provided that >10^–8 cm²/Vs. A field-dependent trapping time model leads to poorer fittings.     

Photoinjection studies of ion-implantation-induced electron traps in MOS structures

Trapping centers related to P⁺ and B⁺ ions implanted in the SiO₂ layer as well as traps introduced into SiO₂ during boron implantation through the oxide into the silicon substrate have been investigated. The internal photoemission method has been used to estimate their capture cross section and total densityN _t .     

Low field DC investigation of hot carrier trapping in silicon dioxide films

The experimental method used in this work is based upon the idea of nonavalanche injection of carriers heated by direct electric field. The structure consisted of an n-channel MOS transistor and two p-n junctions. The process of charge injection in this structure was investigated by studying the dependence of gate current on heating voltage. The trapping properties of the SiO₂ film were studied by monitoring the charging of the film during injection of electrons. The capture cross-sections, the trap centre concentrations and the dependence of the capture cross section on the electric field for fields between 1 MV/cm and 2.5 MV/cm were determined.     

Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating

A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth.     

Ray-tracing prediction of optimal conditions for speech in realistic classrooms

Recent papers have discussed the optimal reverberation times in classrooms for speech intelligibility, based on the assumption of a diffuse sound field. Here this question was investigated for more ‘typical’ classrooms with non-diffuse sound fields. A ray-tracing model was modified to predict speech-intelligibility metric U₅₀. It was used to predict U₅₀ in various classroom configurations for various values of the room absorption, allowing the optimal absorption (that predicting the highest U₅₀)—and the corresponding optimal reverberation time—to be identified in each case. The range of absorptions and reverberation times corresponding to high speech intelligibility were also predicted in each case. Optimal reverberation times were also predicted from the optimal surface-absorption coefficients using Sabine and Eyring versions of diffuse-field theory, and using the diffuse-field expression of Hodgson and Nosal. In order to validate the ray-tracing model, predictions were made for three classrooms with highly diffuse sound fields; these were compared to values obtained by the diffuse-field models, with good agreement. The methods were then applied to three ‘typical’ classrooms with non-diffuse fields. Optimal reverberation times increased with room volume and noise level to over 1 s. The accuracy of the Hodgson and Nosal expression varied with classroom size and noise level. The optimal average surface-absorption coefficients varied from 0.19 to 0.83 in the different classroom configurations tested. High speech intelligibility was, in general, predicted for a wide range of coefficients, but could not be obtained in a large, noisy classroom.     

The photoconductive effect in Pb2CrO5 thin films prepared by an electron-beam evaporation technique

Photoconductivity in Pb₂CrO₅ thin film prepared by an electron-beam evaporation technique is described. Crystallographically, three kinds of thin films are fabricated which depend on substrate temperature. A sample showing a similar x-ray diffraction profile to the evaporation source material gives the highest photoconductive response. Light illumination from the glass substrate onto the sample improves photoconductivity. A pair of interdigital electrodes is more effective than a pair of planar electrodes on the photoconductive measurement. A band gap energy level of Pb₂CrO₅ thin film is around 2.2–2.4 eV as a result of the spectral photoconductive response.     

Constant hole schubweg in Teflon FEP (fluorinated ethylene propylene copolymer)

The hole schubweg (distance travelled between deep trapping events) in Teflon FEP (fluorinated ethylene propylene copolymer) is determined by measuring the mean depth of charge injected from the polymer surface, with various fields applied to the sample. It is found that the mean-depth of the injected charge after deep trapping is independent of the electrical field strength from 0.04 to 0.4 MV/cm. The lower value of 0.04 MV/cm is determined by the sensitivity of the method.     

A generalized formula to determine the relaxation time distribution in dielectrics

The distribution of relaxation times is derived for dielectrics with constants featuring general functions in the - plane. A simple algorithm to determine the distribution parameters is also suggested. The algebraic method adopted enables translation of the algorithm into software to facilitate an efficient processing of data. The new distribution developed here could have an effective use in studies of dispersion in dielectrics and interfaces.     

A generalized representation for dielectric dispersion

The generalized formulation for dielectric dispersion is extended for dielectrics exhibiting strongly overlapping arcs in the- complex plane. Subsequently, a novel network representation is developed whereby Negative Impedance Converters (NICs) are employed along with passive R-C elements. Satisfactory agreement is obtained in comparing the experimental results with those calculated using the new formulation.     

Alkali metal oxides: Occupied,unoccupied and excited states

The occupied and unoccupied electronic states of NaO₂ and KO₂ have been investigated by UV photoemission spectroscopy and inverse photoemission spectroscopy, respectively. In addition single electron excitations from occupied into empty levels have been probed by x-ray absorption and electron energy loss spectroscopy. The experimental data are augmented by LCGTO-X model cluster calculations. A detailed assignment of initial and final states is given. The excitation cross sections and an inversion of the ligand field induced3d level splitting in NaO₂ are discussed.