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The abstraction of chemisorbed hydrogen on Si(1 0 0) and Si(1 1 1) induced by atomic hydrogen has been investigated by studying with a rotatable mass spectrometer the angle-resolved molecular hydrogen desorption from a Si surface exposed to a chopped beam of atomic hydrogen. The angular distributions of desorbing molecules can be fitted independent of the surface temperature and the surface reconstruction by a cosnθ function with n < 1 for Si(1 0 0) and Si(1 1 1). These results are interpreted by non-activated pathways involving site-specific hot-atom abstraction on two adjacent silicon atoms with one having a dangling bond. Possible mechanisms according to the surface reconstructions are discussed. 相似文献
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