Chalcogen-based thin film transistor using CuInSe2 photo-active layer

We propose chalcogen-based photo-thin film transistor (P-TFT) using CuInSe₂ (CIS) homo-junction. By using a tri-layer process, we fabricated n- and p-type CIS films. Optical and electrical properties of the fabricated CIS films are measured to be suitable for homo-junction. For the fabrication of a P-TFT, n-type CIS generating higher photo current was used for a channel layer whereas p-type CIS with higher carrier density was used for source and drain. The fabricated transistor exhibited typical transistor operation of p-channel enhancement mode and current increase with light.