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1.
Patrick Imrie Jianyong Jin 《Journal of polymer science. Part A, Polymer chemistry》2022,60(2):149-174
4D printing is an exciting branch of additive manufacturing. It relies on established 3D printing techniques to fabricate objects in much the same way. However, structures which fall into the 4D printed category have the ability to change with time, hence the “extra dimension.” The common perception of 4D printed objects is that of macroscopic single-material structures limited to point-to-point shape change only, in response to either heat or water. However, in the area of polymer 4D printing, recent advancements challenge this understanding. A host of new polymeric materials have been designed which display a variety of wonderful effects brought about by unconventional stimuli, and advanced additive manufacturing techniques have been developed to accommodate them. As a result, the horizons of polymer 4D printing have been broadened beyond what was initially thought possible. In this review, we showcase the many studies which evolve the very definition of polymer 4D printing, and reveal emerging areas of research integral to its advancement. 相似文献
2.
Vsevolod Khikhlovskyi Albert J. J. M. van Breemen Jasper J. Michels René A. J. Janssen Gerwin H. Gelinck Martijn Kemerink 《Journal of Polymer Science.Polymer Physics》2015,53(17):1231-1237
In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of phase‐separated blends, taking advantage of the possibility to selectively dissolve the different components is introduced. This method is applied in combination with AFM to investigate a blend of a semiconducting and ferroelectric polymer typically used as active layer in organic ferroelectric resistive switches. It is found that the blend consists of a ferroelectric matrix with three types of embedded semiconductor domains and a thin wetting layer at the bottom electrode. Statistical analysis of the obtained images excludes the presence of a fourth type of domains. The criteria for the applicability of the presented technique are discussed. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1231–1237 相似文献
3.
Abstract
In this note, we consider a Frémond model of shape memory alloys. Let us imagine a piece of a shape memory alloy which is
fixed on one part of its boundary, and assume that forcing terms, e.g., heat sources and external stress on the remaining
part of its boundary, converge to some time-independent functions, in appropriate senses, as time goes to infinity. Under
the above assumption, we shall discuss the asymptotic stability for the dynamical system from the viewpoint of the global
attractor. More precisely, we generalize the paper [12] dealing with the one-dimensional case. First, we show the existence
of the global attractor for the limiting autonomous dynamical system; then we characterize the asymptotic stability for the
non-autonomous case by the limiting global attractor.
* Project supported by the MIUR-COFIN 2004 research program on “Mathematical Modelling and Analysis of Free Boundary Problems”. 相似文献
4.
甲基紫掺杂聚乙烯醇薄膜材料在两束相干光照射下生成相位光栅.当改变一束相干光光程,通过监测相位光栅的一级衍射信号强度的变化,可以检测相位光栅的生长和擦除过程.在此实验基础上,讨论了甲基紫掺杂聚乙烯醇薄膜材料多重全息存储的原理与结果. 相似文献
5.
Quenching of the eutectoidal composition of the shape memory alloys (SMA’s) allowed us to display the gradual transition of
the martensitic structure as a function of the composition. Indeed, we have verified that for low Al and Ni percentages, the
martensite structure obtained is β′, while, for high Al and Ni (Al<13.3 mass%) contents, the martensite structure is essentially
of β1′ type. Elsewhere, we have observed that a nickel addition (<4.3 mass%) operates simultaneously on the composition of the
eutectoidal pointand the domain of the different martensitic structures types. During reheating of the quenched structure,
the transformation sequences of the martensite to the parent phase (β1), then the decomposition of the later phase into the
equilibrium phases, and finally, the redissolution of all phases to form the β phase at high temperature, are rather similar.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
6.
High-temperature series expansions of the susceptibility and second moment to 15th order are calculated for zero external field on the linear chain (LC), plane square (PSQ), simple cubic (SC), and body-centered cubic (BCC) lattices. Checks for specific models against pertinent work in the literature are detailed. 相似文献
7.
A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates. 相似文献
8.
9.
Yasumitsu Matsuo Takehiko Ijichi Hironori Yamada Junko Hatori Seiichiro Ikehata 《Central European Journal of Physics》2004,2(2):357-366
We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and
investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current
at around the coercive electric fieldE
c
of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET)
based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than
that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such
devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the
organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the
initial drain current ofE
G
=0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E
c
). From these results, it is suggested that the PEN-FET becomes a memory device. 相似文献
10.
We employ an agent‐based model to show that memory and the absence of an a priori best strategy are sufficient for self‐segregation and clustering to emerge in a complex adaptive system with discrete agents that do not compete over a limited resource nor contend in a winner‐take‐all scenario. An agent starts from a corner of a two‐dimensional lattice and aims to reach a randomly selected site in the opposite side within the shortest possible time. The agent is isolated during the course of its journey and does not interact with other agents. Time‐bound obstacles appear at random lattice locations and the agent must decide whether to challenge or evade any obstacle blocking its path. The agent is capable of adapting a strategy in dealing with an obstacle. We analyze the dependence of strategy‐retention time with strategy for both memory‐based and memory‐less agents. We derive the equality spectrum to establish the environmental conditions that favor the existence of an a priori best strategy. We found that memory‐less agents do not polarize into two opposite strategy‐retention time distributions nor cluster toward a center distribution. © 2004 Wiley Periodicals, Inc. Complexity 9: 41–46, 2004 相似文献