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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
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The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf
and Ti targets in an Ar/O2 ambience, followed by an annealing in different gas
ambiences of N2, NO and NH3 at 600℃ for 2 min.
Capacitance--voltage and gate-leakage properties are characterized and compared. The
results indicate that the NO-annealed sample exhibits the lowest interface-state and
dielectric-charge densities and best device reliability. This is attributed to the
fact that nitridation can create strong Si \equiv N bonds to passivate
dangling Si bonds and replace strained Si--O bonds, thus the sample forms a hardened
dielectric/Si interface with high reliability. 相似文献
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