Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.     

变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

Synthesis of N-protected indolaldehydes using modified Hass procedure

A detailed study on oxidation of N-protected bromomethylindoles into the respective aldehydes was carried out. Using a modified Hass procedure, synthesis of aryl-/hetero-aryl aldehydes in particular indolaldehydes is achieved in reasonable yields.     

Quantum transport properties of the three-dimensional Dirac semimetal Cd_3As_2 single crystals

The discovery of the three-dimensional Dirac semimetals have expanded the family of topological materials,and attracted massive attentions in recent few years.In this short review,we briefly overview the quantum transport properties of a well-studied three-dimensional Dirac semimetal,Cd_3As_2.These unusual transport phenomena include the unexpected ultra-high charge mobility,large linear magnetoresistivity,remarkable Shubnikov-de Hass oscillations,and the evolution of the nontrivial Berry's phase.These quantum transport properties not only reflect the novel electronic structure of Dirac semimetals,but also give the possibilities for their future device applications.