HBT参数对π源空间分布的敏感性研究(英文)

利用理想高斯源的两粒子关联函数，对单高斯源和双高斯源的两π介子HBT关联效应进行了研究，得出了相应的半径参数和A参数．结果表明，半径参数主要取决于高能重离子碰撞中多数π介子产生的中间区域；对产生π介子的边缘区域的空间分布形状不敏感．在边缘区域内产生的π介子主要影响A参数的变化．π介子源空间分布的非高斯形是导致λ参数减少的一个重要因素．The HBT radius parameters and the HBT λ-parameters of single Gaussian source and double Gaussian source are investigated by using two-pion correlation function in HBT intensity interferometry. It is indicated that the radius parameter is insensitive to the spatial shape of the edge zone of source and is mainly affected by the size of the central zone of pions emitted in high energy heavy-ion collisions. The pions produced at the edge of source influence the λ parameter. The non-Gaus...     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

含有本征SiGe层的SiGe异质结双极晶体管集电结耗尽层宽度模型

本文分别建立了含有本征SiGe层的SiGe HBT(异质结双极晶体管)集电结耗尽层各区域的电势、电场分布模型,并在此基础上,建立了集电结耗尽层宽度和延迟时间模型,对该模型进行了模拟仿真,定量地分析了SiGe HBT物理、电学参数对集电结耗尽层宽度和延迟时间的影响,随着基区掺杂浓度和集电结反偏电压的提高,集电结耗尽层延迟时间也随之增大,而随着集电区掺杂浓度的提高和基区Ge组分增加,集电结耗尽层延迟时间随之减小. 关键词： SiGe HBT 集电结耗尽层 延迟时间     

Two-pion interferometry for a partially coherent evolution source

We give the formulas of two-pion Hanbury-Brown-Twiss (HBT) correlation function for a partially coherent evolution pion-emitting source, using quantum probability amplitudes in a path-integral formalism. The multiple scattering of the particles in the source is taken into consideration based on Glauber scattering theory. Two-pion interferometry with effects of the multiple scattering and source collective expansion is examined for a partially coherent source of hadronic gas with a finite baryon density and evolving hydrodynamically. We do not find observable effect of either the multiple scattering or the source collective expansion on HBT chaotic parameter.     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9–1.6 μm) and the long wavelength IR (LWIR) band (8–12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).     

SiGe HBT大信号等效电路模型

基于SiGe HBT(异质结双极晶体管)的物理模型，建立了描述SiGe HBT的大信号等效电路模型.该等效电路模型考虑了准饱和效应和自热效应等，模型分为本征和非本征两部分，物理意义清晰，拓扑结构相对简单.该模型嵌入了PSPICE软件的DEVEO(器件方程开发包)中.在PSPICE软件资源的支持下，利用该模型对SiGe HBT器件进行了交直流特性模拟分析，模拟结果与理论分析结果相一致，并且与文献报道的结果符合较好. 关键词： SiGe HBT 等效电路模型 PSPICE     

A Time-Symmetric Formulation of Quantum Entanglement

I numerically simulate and compare the entanglement of two quanta using the conventional formulation of quantum mechanics and a time-symmetric formulation that has no collapse postulate. The experimental predictions of the two formulations are identical, but the entanglement predictions are significantly different. The time-symmetric formulation reveals an experimentally testable discrepancy in the original quantum analysis of the Hanbury Brown–Twiss experiment, suggests solutions to some parts of the nonlocality and measurement problems, fixes known time asymmetries in the conventional formulation, and answers Bell’s question “How do you convert an ’and’ into an ’or’?”     

激发态质子转移分子2-(2'-羟基苯基)苯并噻唑溶液的全光开关效应

研究了激发态质子转移(ESPT)分子2-(2'-羟基苯基)苯并噻唑(HBT)在不同极性溶剂中的光开关行为,探讨了溶剂极性对HBT分子光开光效应的影响.揭示了光开关脉冲信号的形成原因,建立了基于光诱导HBT分子激发态非线性折射效应的皮秒全光开关的理论模型.根据对时间响应函数的理论计算和实验结果分析,确定了光开关脉冲信号下降前沿和上升后沿的形成机理以及影响因素,并提出了增强光开关信号下降前沿的关断深度,提升上升后沿的恢复速度的有效途径和方法.本文工作为制成皮秒量级关断,微秒甚至纳秒量级重新打开的快速全光开关器 关键词： 全光开关 2-(2'-羟基苯基)苯并噻唑(HBT) 激发态质子转移 非线性光学特性     

高温下HBT晶体热分解过程的理论模拟

基于自洽电荷密度泛函紧束缚(SCC-DFTB)方法研究了富氮含能材料5, 5’-双四唑肼(C₂H₄N₁₀, HBT)晶体在高温下的热分解反应过程.结果表明,结构优化参数与实验误差在5%以内.在2000 K, 2500 K,和3000 K不同温度下,HBT晶体热分解路径和产物表现出相似性.通过过渡态理论和分子动力学两种方法,研究了分解反应C₂H₄N₁₀→C₂H₃N₇+HN₃,发现HBT晶体分解产物中存在叠氮酸(HN₃)分子,化学反应势垒高度为222.85 kJ·mol^-1.研究结果为进一步理解高温下HBT晶体热分解特征提供理论参考.