排序方式： 共有54条查询结果，搜索用时 0 毫秒
1.
I numerically simulate and compare the entanglement of two quanta using the conventional formulation of quantum mechanics and a time-symmetric formulation that has no collapse postulate. The experimental predictions of the two formulations are identical, but the entanglement predictions are significantly different. The time-symmetric formulation reveals an experimentally testable discrepancy in the original quantum analysis of the Hanbury Brown–Twiss experiment, suggests solutions to some parts of the nonlocality and measurement problems, fixes known time asymmetries in the conventional formulation, and answers Bell’s question “How do you convert an ’and’ into an ’or’?” 相似文献
2.
N. Cohen R. Gardi G. Sarusi A. Sa&#x;ar M. Byloos A. Bezinger A.J. SpringThorpe H.C. Liu 《Infrared Physics & Technology》2007,50(2-3):253-259
A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9–1.6 μm) and the long wavelength IR (LWIR) band (8–12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP). 相似文献
3.
We present a systematic analysis of two-pion interferometry for the central Au+Au collisions at √sNN=3, 5, 7, 11, 17, 27, 39, 62, 130 and 200 GeV/c with the help of a multiphase transport (AMPT) model. Emission source-size radius parameters Rlong, Rout, Rside and the chaotic parameter λ are extracted and compared with the experimental data. Transverse momentum and azimuthal angle dependencies of the HBT radii are also discussed for central Au+Au collisions at 200 GeV/c. The results show that the HBT radii in central collisions do not change much above 7 GeV/c. For central collisions at 200 GeV/c, the radii decrease with the increasing of transverse momentum pT but are not sensitive to the azimuthal angle. These results provide a theoretical reference for the energy scan program of the RHIC-STAR experiment. 相似文献
4.
We give the formulas of two-pion Hanbury-Brown-Twiss (HBT) correlation function for a partially coherent evolution pion-emitting source, using quantum probability amplitudes in a path-integral formalism. The multiple scattering of the particles in the source is taken into consideration based on Glauber scattering theory. Two-pion interferometry with effects of the multiple scattering and source collective expansion is examined for a partially coherent source of hadronic gas with a finite baryon density and evolving hydrodynamically. We do not find observable effect of either the multiple scattering or the source collective expansion on HBT chaotic parameter. 相似文献
5.
6.
HBT参数对π源空间分布的敏感性研究(英文) 总被引：1，自引：1，他引：0
利用理想高斯源的两粒子关联函数,对单高斯源和双高斯源的两π介子HBT关联效应进行了研究,得出了相应的半径参数和A参数．结果表明,半径参数主要取决于高能重离子碰撞中多数π介子产生的中间区域;对产生π介子的边缘区域的空间分布形状不敏感．在边缘区域内产生的π介子主要影响A参数的变化．π介子源空间分布的非高斯形是导致λ参数减少的一个重要因素．The HBT radius parameters and the HBT λ-parameters of single Gaussian source and double Gaussian source are investigated by using two-pion correlation function in HBT intensity interferometry. It is indicated that the radius parameter is insensitive to the spatial shape of the edge zone of source and is mainly affected by the size of the central zone of pions emitted in high energy heavy-ion collisions. The pions produced at the edge of source influence the λ parameter. The non-Gaus... 相似文献
7.
Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits. 相似文献
8.
研究了激发态质子转移(ESPT)分子2-(2'-羟基苯基)苯并噻唑(HBT)在不同极性溶剂中的光开关行为,探讨了溶剂极性对HBT分子光开光效应的影响.揭示了光开关脉冲信号的形成原因,建立了基于光诱导HBT分子激发态非线性折射效应的皮秒全光开关的理论模型.根据对时间响应函数的理论计算和实验结果分析,确定了光开关脉冲信号下降前沿和上升后沿的形成机理以及影响因素,并提出了增强光开关信号下降前沿的关断深度,提升上升后沿的恢复速度的有效途径和方法.本文工作为制成皮秒量级关断,微秒甚至纳秒量级重新打开的快速全光开关器关键词：全光开关2-(2'-羟基苯基)苯并噻唑(HBT)激发态质子转移非线性光学特性 相似文献
9.
提出了一种沟槽型发射极SiGe异质结双极化晶体管新结构. 详细分析了新结构中沟槽型发射极的引入对器件性能的影响,并对其机理进行研究. 新型发射极结构通过改变发射极电流路径使电阻分区并联,在不增大结电容的前提下,有效减小发射极电阻,提高器件的频率特性. 结果表明,新结构器件的截止频率和最大振荡频率分别增加至100.2 GHz和134.4 GHz,更重要的是沟槽型发射极结构的引入,在提高器件频率特性的同时,不会降低器件的电流增益,也不会增加结电容,很好实现了频率特性、电流增益和结电容之间的折中. 对沟槽型发射极进行优化设计,改变侧墙高度和侧墙宽度. 沟槽型发射极电阻不受侧墙高度改变的影响,频率性能不变;侧墙宽度增加,频率性能降低.关键词：SiGe 异质结双极化晶体管沟槽型发射极发射极电阻 相似文献
10.
本文分别建立了含有本征SiGe层的SiGe HBT(异质结双极晶体管)集电结耗尽层各区域的电势、电场分布模型,并在此基础上,建立了集电结耗尽层宽度和延迟时间模型,对该模型进行了模拟仿真,定量地分析了SiGe HBT物理、电学参数对集电结耗尽层宽度和延迟时间的影响,随着基区掺杂浓度和集电结反偏电压的提高,集电结耗尽层延迟时间也随之增大,而随着集电区掺杂浓度的提高和基区Ge组分增加,集电结耗尽层延迟时间随之减小.关键词：SiGe HBT集电结耗尽层延迟时间 相似文献