High-frequency magnetoimpedance in nanocomposites

The transmission of millimeter-range electromagnetic waves (30–50 GHz) through a magnetic nanocomposite thin film exhibiting tunnel magnetoresistance (TMR) is calculated. The relative change of transmission coefficient in an applied magnetic field due to the magnetorefractive effect is approximately linear with TMR and strongly depends on nanocomposite resistivity and film thickness. The obtained results are in a good agreement with experiment.     

Millimeter and submillimeter wave spectroscopic investigations into the rotation-tunneling spectrum of gGg ethylene glycol, HOCH2CH2OH

The rotation-tunneling spectrum of the second most stable gGg^′ conformer of ethylene glycol (1,2-ethanediol) in its ground vibrational state has been studied in selected regions between 77 and 579 GHz. Compared to the study of the more stable aGg^′ conformer, a much larger frequency range was studied, resulting in a much extended frequency list covering similar quantum numbers, J?55 and K_a?19. While the input data were reproduced within experimental uncertainties up to moderately high values of J and K_a larger residuals remain at higher quantum numbers. The severe mixing of the states caused by the Coriolis interaction between the two tunneling substates is suggested to provide a considerable part of the explanation. In addition, a Coriolis interaction of the gGg^′ ground vibrational state with an excited state of the aGg^′ conformer may also contribute. Relative intensities of closely spaced lines have been investigated to determine the signs of the Coriolis constants between the two tunneling substates relative to the dipole moment components and to estimate the magnitudes of the dipole moment components and the energy difference between the gGg^′ and the aGg^′ conformers. Results of ab initio calculations on the total dipole moment and the vibrational spectrum were needed for these estimates. The current analysis is limited to transitions with quantum numbers J?40 and K_a?6 plus those having J?22 and K_a?17 which could be reproduced within experimental uncertainties. The results are aimed at aiding radioastronomers to search for gGg^′ ethylene glycol in comets and in interstellar space.     

Wave function mapping of self-assembled quantum dots by capacitance spectroscopy

We use frequency-dependent capacitance–voltage spectroscopy to study the dynamic charging of self-assembled InAs quantum dots. With increasing frequency, the AC charging becomes suppressed, beginning with the low-energy states. By applying an in-plane magnetic field, we generate an additional magnetic confinement that alters the tunneling barrier and hence the charging dynamics. In traveling through the potential barrier, the electrons acquire an additional momentum k₀, proportional to the magnetic field B. As the tunneling is enhanced, when k₀ matches the maximum of the electronic wave function Ψ (in momentum representation), we are able to map out the shape of Ψ by varying B.     

正常金属/超导/正常金属双垒隧道结中的量子相干输运

考虑到量子相干效应和界面散射效应 ,利用 L ambert理论模型 ,计算正常金属 /绝缘层 /超导 /绝缘层 /正常金属双垒隧道结中的准粒子输运系数和隧道谱。研究表明 :( 1)所有的准粒子输运系数和电导谱在超导能隙之上都随能量作周期性振荡 ,其振荡周期依赖于超导层的厚度 ;( 2 )在超导能隙之上 Andreev反射系数随能量呈现周期性消失现象 ;( 3)在绝缘层势垒强度取很大的隧道极限下 ,超导层中会形成一系列的准粒子束缚态 ,其位置由量子化条件决定 ;( 4)界面散射效应不仅能压低各子能隙电导峰 ,还能使子能隙电导峰劈裂为两个峰。     

The nucleon and Δ-resonance masses in relativistic chiral effective-field theory

We study the chiral behavior of the nucleon and Δ-isobar masses within a manifestly covariant chiral effective-field theory, consistent with the analyticity principle. We compute the πN and πΔ one-loop contributions to the mass and field-normalization constant, and find that they can be described in terms of universal relativistic loop functions, multiplied by appropriate spin, isospin and coupling constants. We show that these manifestly relativistic one-loop corrections, when properly renormalized, obey the chiral power-counting and vanish in the chiral limit. The results including only the πN-loop corrections compare favorably with the lattice QCD data for the pion-mass dependence of the nucleon and Δ masses, while inclusion of the πΔ loops tends to spoil this agreement.     

Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究

在研究大量实验曲线的基础上,指出势阱所有能级均有一定的宽度,电子或空穴在各能级中出现的概率符合正态分布,从理论上分析了I类超晶格和双势垒单势阱的发光光谱与吸收光谱·解释了GaAs/Ga1-xAlxAs多量子阱和超晶格吸收光谱吸收边及量子阱变窄时各吸收峰的“蓝移现象”及GaAs/Ga1-xAlxAs双势垒单量子阱样品的电流—电压特性曲线及电导—电压特性曲线的特征和出现的“负阻效应”·     

Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions

The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τ_s becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors.     

Influence of preparation method on SrMoO4 impurity content and magnetotransport properties of double perovskite Sr2FeMoO6 polycrystals

The magnetic and electric properties of the Sr₂FeMoO₆ compound produced under different preparation conditions were studied. Depending on the preparation condition, a strong variation in the nonmagnetic SrMoO₄ impurity content was found, which in turn determined the metallic or semiconducting behavior of the resistivity of the Sr₂FeMoO₆ compound. There was also evidence that SrMoO₄ played a crucial role in modifying the low magnetic field intergrain tunneling magnetoresistance in Sr₂FeMoO₆. In addition, we have established a simple method to prepare the single phase Sr₂FeMoO₆ polycrystals.     

Low energy properties of identical and strongly correlated particles

Interesting qualitative consequences can arise from the quantum mechanical identity among strongly correlated particles that carry spin. This is demonstrated for properties connected with the low energy excitations in molecular and electronic systems. Spatial permutations among the identical particles are used as the key features. The particular behaviour of rotational tunneling molecules or molecular parts under the influence of dissipation are discussed together with the consequences arising for conversion transitions. The relationship between the thermal shifting of the tunneling line and the conversion rate at low and at elevated temperatures is explicated. The valuable information, that can be extracted from the conversion behaviour after isotopical substitution, is explained in detail. At low temperatures qualitative changes are predicted for the conversion rate by deuteration. Weakly hindered rotors show, also experimentally, drastic isotopic effects. The second part is devoted to finite systems of strongly interacting electrons that appear in semi-conductor nano-structures. The lowest excitation energies are strongly influenced by the interaction. They can be understood and determined starting from the limit of crystallized electrons by introducing localized many particle ‘pocket states’. The energy levels show multiplet structure, in agreement with numerical results. The total electron spin, associated with the low energy excitations, is crucially important for the nonlinear transport properties through quantum dots. It allows for instance to explain the appearance of negative differential conductances.     

On possible spin injection at non-ideal Schottky contacts

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.