Image Formation in Low Vacuum SEM

The role of positive gaseous ions in the formation of secondary electron images in low vacuum scanning electron microscopes is discussed. This paper describes the charging processes and related effects that occur during high vacuum imaging of insulators and then discusses the influence of ions on those processes. The ions are responsible for a number of phenomena, including distortion of the electric field above and below the specimen surface due to space charge, removal of excess negative charge from the specimen, alteration of the specimen surface barrier, and scavenging/filtering of the secondary electron emission. The resulting electron-specimen-ion interactions can give rise to interesting contrast effects that are unique to this class of instruments.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Dielectric and13C NMR studies of the carbon monoxide clathrate hydrate

The structure I clathrate hydrate of carbon monoxide has been studied using dielectric measurements and¹³C NMR spectroscopy. Broad, weak dielectric absorption curves with maxima at 2.2–3.8 K yieldE _a = 0.14 kJ mol^–1 for the average Arrhenius activation energy associated with the reorientation of the low polarity guest. Except for H₂S this represents the fastest reorienting polar guest known among the clathrate hydrates. The low temperature dielectric absorption curves can best be fitted with a Cole-Davidson asymmetric distribution of relaxation times and activation energies (with = 0.06 at 4 × 10⁶ Hz), which at 10⁷ Hz has been resolved into a double symmetric distribution of discrete relaxation times for CO in the small and large cages. The cross-polarization magic angle spinning¹³C NMR spectra indicate identical chemical shifts for CO in the small and large cages, in contrast to other hydrates. The static spectra show that the CO molecules undergo anisotropic reorientation in the large cages and that there is still considerable mobility at 77 K. One possible model for the anisotropic motion has the CO rapidly moving among sites over each of the 14 faces of the cage with the CO axis orientated towards the cage centre. The cage occupancy ratio at 220 K, _s/ _L = 1.11, indicates slightly greater preference of CO for the small cage.Dedicated to Dr D. W. Davidson in honor of his great contributions to the sciences of inclusion phenomena.     

层叠Blumlein线多开关导通时间分散性

高介电常数陶瓷储能脉冲形成线需要用到多开关触发的层叠Blumlein线结构。从形成线波过程理论出发，分析了多开关导通时间分散性对层叠Blumlein线及其输出波形的影响。主要包括两方面影响:其一是造成输出方波脉冲的前沿和后沿均出现阶梯形畸变；其二是使得各延迟导通的平行平板Blumlein线承受过电压，容易引起陶瓷储能介质的电击穿。在不单独考虑开关电感的理想情况下，利用PSpice电路程序模拟了开关导通时间分散性对四级层叠Blumlein线的影响，模拟结果与波过程理论分析一致。为减弱这些影响，提出了可行的解决方案。     

Solution-Processable Low Voltage Organic Transistors of Thieno[3,2-b]thiophene-Based Conducting Polymer

A low-operating voltage and high performance polymeric field effect transistors using octadecylphosphonic acid-treated high-k AlOx and HfO₂ hybrid dielectrics were demonstrated. High-k metal oxide hybrid dielectrics were prepared by oxygen plasma treatment of deposited Al film for AlOx and by spin coating of solution-processable HfO₂ sol-gel solution for HfO₂ in combination with phosphoric acid-based self-assembled monolayer (SAM), resulting in high capacitance (10 nF/cm² for SiO₂, 600 nF/cm² for AlOx and 580 nF/cm² for HfO₂). With phosphoric acid-based SAM on high-k metal oxide and thermal annealing of thieno[3,2-b]thiophene-based conducting polymer, the device performance was significantly enhanced. The highest mobility of the transistors using ODPA-treated AlOx as a gate dielectric is 2.3 × 10^?2 cm² V^?1 s^?1 in the saturation region with the source-drain of ?2 V. In ODPA-treated HfO₂ hybrid dielectric, the saturated mobility is 1.1 × 10^?2 cm² V^?1 s^?1 and the threshold voltage was measured to be ?0.31 V, which is at least one order lower than SiO₂ hybrid dielectric (?3 V).     

不同液体介质的高压静电雾化试验研究

自行设计、组装高压静电雾化试验装置,研究同一环境下煤油、乳化剂和酒精3种不同液体介质在高压静电场中的雾化过程.结果表明:液体介质的表面张力和粘性力越小、电导率越大,静电雾化效果越好.煤油、乳化剂和酒精分别在40 V,10 kV和25 kV时达到最佳的雾化效果.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

基于蛋清栅绝缘层的高性能C_(60)有机场效应晶体管(英文)

采用生物材料(蛋清)作为栅绝缘层制备了基于C60为有源层的有机场效应晶体管。器件展现出了合理的电学特性,场效应迁移率和阈值电压分别为2.59 cm2·V-1·s-1和1.25 V。有机场效应晶体管展现良好性能的原因是蛋清具有较高的介电常数及热退火后形成的光滑表面形貌。实验结果表明,对于制备有机场效应晶体管来说,蛋清是一种有前途的绝缘层材料。     

Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

This paper describes the structural properties and electrical characteristics of thin Dy₂O₃ dielectrics deposited on silicon substrates by means of reactive sputtering. The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Dy₂O₃ dielectrics annealed at 700 °C exhibit a thinner capacitance equivalent thickness and better electrical properties, including the interface trap density and the hysteresis in the capacitance-voltage curves. Under constant current stress, the Weibull slope of the charge-to-breakdown of the 700 °C-annealed films is about 1.6. These results are attributed to the formation of well-crystallized Dy₂O₃ structure and the reduction of the interfacial SiO₂ layer.