A comparative study on the interaction between tin(II) porphyrin and selected group 8B metals for potential application as reduction catalysts

We study the interaction between tin(II) porphyrin (SnPor) with platinum and non-precious Group 8B metals (iron, cobalt and nickel) by density functional theory and discuss the electronic properties of the resulting products. We also model the interaction of the resulting compounds with water where applicable. Our studies indicate that, SnPor-Ni possesses electronic properties similar to SnPor-Pt, suggesting that it may possess similar photocatalytic properties for reduction reactions, such as converting water to hydrogen gas.     

CuX(X=Al, Ga, In)分子的势能函数与稳定性的密度泛函研究

根据原子分子反应静力学原理导出了CuX(X=Al,Ga,In) 分子基态电子状态及其离解极限,并在B3LYP/LANL2DZ水平上计算了平衡几何、振动频率和解离能.利用Murrell-Sorbie 函数拟合出了解析势能函数,并计算出光谱参数和力常数.计算结果表明该分子体系是稳定存在的,其稳定性排序为 CuAl＞CuGa＞CuIn.     

Effect of Ga doping on magneto-transport properties in colossal magnetoresistive La0.7Ca0.3Mn1−xGaxO3 (0<x<0.1)

Samples of La_0.7Ca_0.3Mn_1−xGa_xO₃ with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn³⁺/Mn⁴⁺ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping.     

Adsorption of n-Butanol from Aqueous Solutions on a Bi–Ga Electrode

Curves of the differential capacitance at the Bi–Ga/H₂O interface in 0.05 M Na₂SO₄ solutions with different concentrations of n-C₄H₉OH are obtained by a bridge method at 420 Hz and 32°C. Adsorption parameters of n-C₄H₉OH, determined by a regression analysis of these curves, are compared with relevant data for mercury and partially fused polycrystalline bismuth (pBi). That the adsorption behavior of organic molecules at Hg differs from that at pBi and Bi–Ga is due not to their different hydrophilicity but to a different physical interaction water–electrode. The reason for this phenomenon can be an unequal spread of electron density beyond the ionic cores of Hg and Bi. These notions are corroborated by the fact that the Bi–Ga data fit overall correlation dependence between the electronic capacitance of different electrodes in the absence of a chemisorption interaction metal–water and the adsorbability of the n-C₄H₉OH molecules on them.     

Electrical Double Layer on Liquid Sn–Ga Alloy in Aqueous Solutions

Double-layer parameters of a liquid Sn–Ga electrode in aqueous electrolyte solutions are studied. It is shown that Sn in the alloy with Ga is a surface-active component and is forced out onto a surface layer of the electrode. The double-layer parameters of an Sn–Ga electrode (8 at. % Sn), which are measured in the experimentally accessible range of charges, differ radically from the parameters of Ga electrodes and are close to those of Sn electrode. Hence, an Sn–Ga electrode containing 8 at. % Sn simulates electrochemical properties of a liquid Sn electrode. The difference between reciprocal electronic capacitances of Hg and Sn and a corrected electrochemical work function of Sn are determined. It is shown that the chemisorption interaction of an Sn–Ga electrode with water molecules is virtually absent at charges more negative than –7 C/cm². A potential drop on uncharged Sn, which is associated with water chemisorption, is –20 mV. Thus, the hydrophilicity of Sn is slightly higher than that of Hg, Bi–Ga, Pb–Ga, and Tl–Ga and significantly lower than that of In–Ga, Cd–Ga, and Ga.     

A Specific HPLC Method to Determine Residual HEPES in [68Ga]Ga-Radiopharmaceuticals: Development and Validation

Background: Nowadays, in Nuclear Medicine, clinically applied radiopharmaceuticals must meet quality release criteria such as high radiochemical purity and radiochemical yield. Many radiopharmaceuticals do not have marketing authorization and have no dedicated monograph within European Pharmacopeia (Ph. Eur.); therefore, general monographs on quality controls (QCs) have to be applied for clinical application. These criteria require standardization and validation in labeling and preparation, including quality controls measurements, according to well defined standard operation procedures. However, QC measurements are often based on detection techniques that are specific to a certain chromatographic system. Several radiosyntheses of [⁶⁸Ga]Ga-radiopharmaceuticals are more efficient and robust when they are performed with 2-[4-(2-hydroxyethyl)piperazin-1-yl] ethanesulfonic acid (HEPES) buffer, which is considered as an impurity to be assessed in the QC procedure, prior to clinical use. Thus, Ph. Eur. has introduced a thin-layer chromatography (TLC) method to quantify the HEPES amount that is present in [⁶⁸Ga]Ga-radiopharmaceuticals. However, this is only qualitative and has proven to be unreliable. Here we develop and validate a new high-performance liquid chromatography (UV-Radio-HPLC) method to quantify the residual amount of HEPES in ⁶⁸Ga-based radiopharmaceuticals. Method: To validate the proposed UV-Radio-HPLC method, a stepwise approach was used, as defined in the guidance document that was adopted by the European Medicines Agency (CMP/ICH/381/95 2014). The assessed parameters are specificity, linearity, precision (repeatability), accuracy, and limit of quantification. A range of concentrations of HEPES (100, 80, 60, 40, 20, 10, 5, 3 μg/mL) were analyzed. Moreover, to test the validity and pertinence of our new HPLC method, we analyzed samples of [⁶⁸Ga]Ga-DOTATOC; [⁶⁸Ga]Ga-PSMA; [⁶⁸Ga]Ga-DOTATATE; [⁶⁸Ga]Ga-Pentixafor; and [⁶⁸Ga]Ga-NODAGA-Exendin-4 from different batches that were prepared for clinical use. Results: In the assessed samples, HEPES could not be detected by the TLC method that was described in Ph. Eur. within 4 min incubation in an iodine-saturated chamber. Our developed HPLC method showed excellent linearity between 3 and 100 μg/mL for HEPES, with a correlation coefficient (R²) for calibration curves that was equal to 0.999, coefficients of variation (CV%) < 2%, and percent deviation value of bias from 100% to 5%, in accordance with acceptance criteria. The intra-day and inter-day precision of our method was statistically confirmed and the limit-of-quantification (LOQ) was 3 μg/mL, confirming the high sensitivity of the method. The amount of HEPES that was detected with our developed HPLC method in the tested [⁶⁸Ga]Ga-radiopharmaceuticals resulted well below the Ph. Eur. limit, especially for [⁶⁸Ga]Ga-NODAGA-Exendin-4. Conclusions: The TLC method that is described in Ph. Eur. to assess residual HEPES in [⁶⁸Ga]-based radiopharmaceuticals may not be sufficiently sensitive and thus unsuitable for QC release. Our new HPLC method was sensitive, quantitative, reproducible, and rapid for QCs, allowing us to exactly determine the residual HEPES amount in [⁶⁸Ga]Ga-radiopharmaceuticals for safe patient administration.     

非等电子Sb替换Cu和Te后黄铜矿结构半导体Cu_3Ga_5Te_9的热电性能

热电材料是一类能够实现热与电相互转换的功能材料,在制冷和发电领域极具应用潜力.本文采用金属Sb元素非等电子替换Cu3Ga5Te9化学式中的Cu和Te,观察到材料Seebeck系数和电导率提升的现象.这些电学性能的改善与载流子浓度和有效质量的增大及迁移率基本维持不变有关.载流子浓度的提高是由于Sb原子占位在Te晶格位置后费米能级进入到价带所产生的空穴掺杂效应所致,同时也与Cu含量减少后铜空位(V-1Cu)浓度增大相关联.另外,非等电子替换后,阴离子(Te2-)移位导致了晶格结构缺陷参数u和η的改变,其改变量fiu和fiη与材料晶格热导率(κL)的变化密切相关.在766 K时,适量的Sb替换量使材料的最大热电优值(ZT)达到0.6,比Cu3Ga5Te9提高了近25%.因此,通过选择替换元素、被替换元素及替换量有效地调控了材料的电学及热学性能,在黄铜矿结构半导体中实现了非等电子元素替换改善热电性能的思想.     

铜铟镓硒太阳能电池多层膜的结构分析

对于溅射后硒化和共蒸发等方法制备的铜铟镓硒（CIGS）太阳能电池薄膜,利用多种分析方法研究了CIGS多层膜的复杂结构等．研究表明：卢瑟福背散射（RBS）在分析CIGS多层膜方面具有其独特优势和可靠的结果;溅射后硒化方法制备的CIGS薄膜中,Ga和In在CIGS薄膜中呈梯度分布,这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系;RBS和俄歇电子能谱分析（AES）均显示CIGS太阳能电池器件多层膜界面处存在扩散,尤其是CdS与CIGS,Mo与CIGS的界面处;X射线荧光（XRF）结果表明,电池效率最高的CIGS层中In,Ga比例为In：Ga=0．7：0.3;X射线衍射（XRD）结果显示：退火后的CIGS／Mo薄膜结晶品质得到了优化．     

n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能.研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35％.霍尔(Hall)效应测试表明In0.35Ga0.65N...