Phase transition in the one-dimensional pair-hopping model with unusual one-electron hopping

By modifying the conventional one-electron hopping behavior, we study effects of an occupation-dependent hopping on the ground state of the half-filled one-dimensional pair-hopping model. At weak coupling, the use of bosonization and renormalization-group analysis techniques helps to derive the phase diagram. Such unusual hopping is shown to drive a spin-gap transition and to introduce a new region where the triplet superconducting instability dominates for positively small pair-hopping interaction.     

新疆玛纳斯湖水蒸发过程研究

本文依据Na^ ,K^ ,Mg^2 //Cl^-,SO4^2--H2O五元水盐体系相图，对新疆玛纳斯盐湖水进行原料分析、理论研究、25℃等温蒸发实验和自然蒸发实验，研究了该湖水蒸发过程中盐类的析出规律及湖水中各组分浓度变化的规律，为进行工艺实验及将来的综合开发利用提供了可靠依据。     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

电子束蒸发制备HfO_2高k薄膜的结构特性

使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .俄歇电子能谱证实薄膜组分符合化学配比 ;x射线衍射测量表明刚沉积的薄膜是近非晶的 ,高温退火后发生部分晶化 ;原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面 ,表明薄膜具有优良的热稳定性 ;椭偏测得在 6 0 0nm处薄膜折射率为 2 0 9;电容 电压测试得到的薄膜介电常数为 1 9.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2 薄膜的方法     

有效二能级原子与压缩相干光场相互作用过程中场熵的特性

本文研究了包括Stark效应时,双光子Jaynes-Cummings模型与单模压缩相干光场发生相互作用过程中场熵的特性,讨论了Stark移动参数、光场参数对场墒演化的影响.     

Simulation and fabrication of carbon nanotubes field emission pressure sensors

A novel field emission pressure sensor has been achieved utilizing carbon nanotubes (CNTs) as the electron source. The sensor consists of the anode sensing film fabricated by wet etching process and multi-wall carbon nanotubes (MWNTs) cathode in the micro-vacuum chamber. MWNTs on the silicon substrate were grown by thermal CVD. The prototype pressure sensor has a measured sensitivity of about 0.17-0.77 nA/Pa (101-550 KPa). The work shows the potential use of CNTs-based field-emitter in microsensors, such as accelerometers and tactile sensors.     

石灰石闪蒸改性及脱硫性能的试验研究

本文对3种不同产地的石灰石进行了闪蒸改性处理,对改性石灰石颗粒的孔径分布进行了测定,研究了压力、温度等参数对石灰石闪蒸改性的影响。并在气流反应器上对闪蒸后的样品进行了硫化试验。结果表明,在一定的压力和温度下,闪蒸处理能够增大石灰石颗粒的微孔孔径,并使石灰石样品的脱硫性能得到较大提高。     

Deposition-evaporation stochastic systems in two and higher dimensions

We study the stochastic dynamics of deposition-evaporation cooperative processes of dimers, trimers, etc., in two- and higher-dimensional lattices. The dimer system in bipartite lattices allows for an exact solution of dynamic correlations and scaling functions by means of a quantum spin equivalence. Autocorrelations exhibit a diffusive asymptotic kinetics and crossovers of different dynamic regimes in highly anisotropic lattices. Monte Carlo simulations combined with finite-size scaling arguments support the validity of the diffusive picture in more general situations. Steady-state coverages and diffusion constants are obtained using mean-field approaches, spin wave calculations, and random walk analyses in nearly jammed configurations.     

X-ray photoelectron spectroscopy characterization of oxidated Si particles formed by pulsed ion-beam ablation

X-ray photoelectron spectroscopy (XPS) is used to probe oxidation states of Si species in particles deposited using a pulsed ion-beam evaporation method. The effects of He ambient gas, ion beam intensity and post-treatments on the oxides composition and oxygen content have been studied. It is found that presence of He ambient gas led to a profound oxidation of Si species as compared to that prepared in vacuum at the same ion-beam ablation energy, i.e. both increase of SiO₂ component and oxygen concentration in the oxides coverage. The deposition in He also resulted in an increase of oxygen concentration even under lower ablation intensity, but a higher Si suboxides concentration. It is revealed that the reaction between Si and O was controlled by the ion beam intensity (temperature of Si plasma) and the gas ambient (collision probability of Si and O species). The difference in structure of oxide layers for samples obtained under various conditions is discussed based on the results of XPS analyses.     

掺杂对碳纳米管拉曼光谱及场发射性能的影响

采用高温热解法在860℃分别制备出了镓、氮以及硼和氮掺杂的碳纳米管,提纯后利用丝网印刷工艺分别将它们制备成薄膜,并测试了它们的拉曼光谱与场发射性能。测试结果表明,掺杂纳米管的缺陷密集度比纯碳纳米管明显增大,而它们的场致电子发射性能则与掺杂元素的性质密切相关。镓和氮掺杂的纳米管均具有非常优异的场发射性能,而硼和氮共掺杂的纳米管的场发射性能很差。掺杂引起碳纳米管费米能级附近能态密度的变化及功函数的降低是其具有优异场致电子发射性能的主要原因。