Momentum transport and torque scaling in Taylor-Couette flow from an analogy with turbulent convection

We generalize an analogy between rotating and stratified shear flows. This analogy is summarized in Table 1. We use this analogy in the unstable case (centrifugally unstable flow vs. convection) to compute the torque in Taylor-Couette configuration, as a function of the Reynolds number. At low Reynolds numbers, when most of the dissipation comes from the mean flow, we predict that the non-dimensional torque G = T/ν² L, where L is the cylinder length, scales with Reynolds number R and gap width η, G = 1.46η^3/2(1 - η)^-7/4 R ^3/2. At larger Reynolds number, velocity fluctuations become non-negligible in the dissipation. In these regimes, there is no exact power law dependence the torque versus Reynolds. Instead, we obtain logarithmic corrections to the classical ultra-hard (exponent 2) regimes: G = 0.50 . These predictions are found to be in excellent agreement with avail-able experimental data. Predictions for scaling of velocity fluctuations are also provided. Received 7 June 2001 and Received in final form 7 December 2001     

Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate

The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

Transition of 3D to 2D growth modes of InAs grown on GaAs

We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.     

Dispersion modeling by kinematic simulation: Cloud dispersion model

A new technique has been developed to compute mean and fluctuating concentrations in complex turbulent flows (tidal current near a coast and deep ocean). An initial distribution of material is discretized into any small clouds which are advected by a combination of the mean flow and large scale turbulence. The turbulence can be simulated either by kinematic simulation (KS) or direct numerical simulation. The clouds also diffuse relative to their centroids; the statistics for this are obtained from a separate calculation of the growth of individual clouds in small scale turbulence, generated by KS. The ensemble of discrete clouds is periodically re-discretized, to limit the size of the small clouds and prevent overlapping. The model is illustrated with simulations of dispersion in uniform flow, and the results are compared with analytic, steady state solutions. The aim of this study is to understand how pollutants disperses in a turbulent flow through a numerical simulation of fluid particle motion in a random flow field generated by Fourier modes. Although this homogeneous turbulent is rather a “simple” flow, it represents a building block toward understanding pollutant dispersion in more complex flow. The results presented here are preliminary in nature, but we expect that similar qualitative results should be observed in a genuine turbulent flow.     

Continuous preparation of decorated nano zinc oxide organic sols with intense luminescence

A sort of decorated nano ZnO organic sols have been successively prepared by pulsed laser ablation at the interface of ZnO target and a flowing liquid containing polymers. It is found that the decorated nano ZnO ethanol sols, the decorated nano ZnO-PS (polystyrene) cyclohexane sols and the decorated nano ZnO-PMMA (polymethyl methacrylate) ethyl butyrate sols all have strong fluorescence emission at 329 nm and 411 nm, 308 nm and 317 nm, and at 330 nm and 400 nm, respectively. The results show the decorating for nano ZnO will intensely affect their luminescence, and the wavelength and intensity of luminescence can be adjusted or controlled by the different decoration.     

Cascade Grating Structure for Increasing the Channel Number on Holographic Demultiplexer

The expansion capability of the channel number in the optical demultiplexer using two cascaded photopolymer volume gratings is reported. It could be accomplished by designing of two gratings with different spectral range. As a result of the experiment, a 0.4-nm-spaced 130-channel demultiplexer with the channel uniformity of 3.5 dB, the 3 riB-bandwidth of 0.12nm, and the channel crosstalk of-20 dB is experimentally demonstrated.     

Study of short-lived silver isotopes with a laser ion source

The continuum part of the⁶Li (a,a)⁶Li (1.47–2.47 MeV) scattering data at E_a=50 MeV are extracted in two discretized bins. Coupled-channel calculations are carried out coupling the 1⁺ ground state of⁶Li with both the resonant, 3⁺ ₁ state, and two non-resonant continuum states. The discretized continuum of the⁶Li (p,p)⁶Li (1.75–3.25 MeV) scattering data at E_p=65 MeV are also analysed on the same footing. In both the cases the effect of coupling is found to be minimal.     

Comparison of the elastic and inelastic scatterings between152Sm+12C and148 Nd+16O

Angular distributions of elastic and inelastic scattering have been measured for¹⁵²Sm+¹²C at 63.2 MeV and¹⁴⁸Nd+¹⁶O at 90.9 MeV. An evident interference pattern in the inelastic scattering has been observed for the first time in a strong Coulomb coupling system.We are indebted to Dr. S. Pieper for supplying the Ptolemy Program. One of us (Chenglie Jiang) would like to acknowledge the Argonne National Laboratory for the opportunity given, to perform theoretical calculations with the code Ptolemy during his visit there. Thanks are also due to Mr. H. Folger (GSI, Germany) for supplying the targets. This work was supported in part by China National Nature Science Fundation.     

Excitations in208Pb nearE x=5683 keV

A search for the recently proposed two-phonon octupole vibrational (2-POV) 4⁺ or 6⁺ state in²⁰⁸Pb at an excitation energy of 5683 keV has been performed using the²⁰⁷Pb(d,p),²⁰⁸Pb (p,p) and (,) reactions at high energy resolution. No evidence for a two-phonon excitation at this energy is found.This work was supported in part by the DFG under contract nr. II C4-Gr 894/2-1 and by the DFG-Graduiertenkolleg Struktur der Hadronen und Kerne under contract nr. Mu 705/3-1.