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1.
Effects of electron-interface-phonon interaction on the interaction between electrons in double heterostructures are considered. It is found that the interaction potential between electrons caused by each of four interface-phonon modes is different. For electrons moving at the two interfaces of double heterostructure, the interaction energies of the electrons produced by the interaction with antisymmetric modes are positive which indicate that the forces between electrons are repulsive. The interaction energies caused by interaction with symmetric modes are negative and the forces are attractive. The resultant of the forces are attractive and become larger when the width of potential barrier decreases for InAs/GaSb/InAs double heterostructure. 相似文献
2.
Magnetism of Fe/Cr/Sn/Cr multilayers have been studied by the first-principles density-functional theory. Calculations by the full-potential linearized augmented plane waves (FP LAPW) and screened Korringa–Kohn–Rostoker (SKKR) methods have shown that two types of solutions may be found in these systems: a high-spin (HS) and a low-spin (LS) ones in accordance with the Cr magnetic moment magnitudes. In this work, we have concentrated our attention on the LS solution. The calculation has shown that the LS solution has a phase slip of antiferromagnetic ordering in Cr and is classified as an incommensurate spin density wave (ISDW). The dependence of the ISDW solution on the thickness of Cr, lattice parameter and boundary conditions has been investigated. 相似文献
3.
P. T. H. Fisk M. J. Sellars M. A. Lawn C. Coles 《Applied physics. B, Lasers and optics》1995,60(6):519-527
A microwave frequency standard based on buffer gas-cooled171Yb+ ions confined in a linear Paul trap has been demonstrated in prototype form. The standard exhibits a fractional frequency instability characterised by an Allan deviation of (y() = 2.9 × 10–13–1/2 for < 2 × 104 s. Factors affecting the stability of the standard have been systematically investigated. 相似文献
4.
We look at some one-dimensional semi-infinite superlattices with an underlying Hamiltonian that is of the nearest neighbour, tight binding type. A real space rescaling procedure which is exact in one dimension is applied to obtain the location of the subbands. It has been found that these subbands never overlap in 1D, and we interpret this as a band repulsion effect. Relevance in the case of a disordered system where this band repulsion crosses over to the well-known level repulsion is discussed. Then with a proper matching at the boundary we solve for the sets of denumerably infinite number of decaying solutions (the surface states) in the gaps. These types of states have been proposed quite some time ago. We look at detail theirexact analytical solutions in 1D and find that their decay lengths near the band edges diverge as |E–E
b|–v, wherev=1/2 andE
b is the nearest band edge. The decay lengths and their divergence exponent match extremely well with those obtained from transfer matrix method. Some recent experiments on quantum well structures seem to have observed such states. 相似文献
5.
We review spacetime dynamics in the presence of large-scale electromagnetic fields and then consider the effects of the magnetic component on perturbations to a spatially homogeneous and isotropic universe. Using covariant techniques, we refine and extend earlier work and provide the magnetohydrodynamic equations that describe inhomogeneous magnetic cosmologies in full general relativity. Specialising this system to perturbed Friedmann–Robertson–Walker models, we examine the effects of the field on the expansion dynamics and on the growth of density inhomogeneities, including non-adiabatic modes. We look at scalar perturbations and obtain analytic solutions for their linear evolution in the radiation, dust and inflationary eras. In the dust case we also calculate the magnetic analogue of the Jeans length. We then consider the evolution of vector perturbations and find that the magnetic presence generally reduces the decay rate of these distortions. Finally, we examine the implications of magnetic fields for the evolution of cosmological gravitational waves. 相似文献
6.
D. Chattopadhyay 《Applied Physics A: Materials Science & Processing》1991,53(1):35-42
Transport properties of the electrons itinerant two dimensionality in a square quantum well of In0.53Ga0.47As are studied in the framework of Fermi-Dirac statistics including the relevant scattering mechanisms. An iterative solution of the Boltzmann equation shows that the ohmic mobility is controlled by LO phonon scattering at room temperature, but below 130 K alloy scattering is predominant. The calculated mobilities with a suitable value of the alloy scattering potential agree with the experimental results over a range of lattice temperature. For lattice temperatures below 25 K where the carrier energy loss is governed by the deformation potential acoustic scattering, the warm electron coefficient is found to be negative. Its magnitude decreases with increasing lattice temperature and is greater for larger channel widths. Values of the small-signal AC mobility of hot electrons at a lattice temperature of 4.2 K are obtained for different sheet carrier densities and channel widths. Cut-off frequencies around 100 GHz are indicated.Dedicated to H.-J. Queisser on the occasion of his 60th birthday 相似文献
7.
Nishant N. Patel K. B. Joshi 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,59(1):19-23
Using empirical pseudopotential method Γ-L crossover is found for
the Ga0.74Al0.26Sb. The conduction band minimum is observed to
switch at the (0.87, 0, 0) point for Ga0.51Al0.49Sb which shifts to
the X point for Ga0.21Al0.79Sb and remains at X leading finally to
indirect band gap in AlSb. Band structure calculations for a large number of
alloys are performed and bowing parameters bX and bL are proposed
for the EX and EL respectively. Our findings may serve as
directive to select the materials in a range of composition to examine the
bowing parameters and thereby effective mass experimentally for the
GaxAl1-xSb alloys. 相似文献
8.
A. Gueddim 《Applied Surface Science》2007,253(17):7336-7341
Theoretical investigations of the conduction band offset (CBO) and valence band offset (VBO) of the relaxed and pseudo-morphically strained GaAs1−xNx/GaAs1−yNy heterointerfaces at various nitrogen concentrations (x and y) within the range 0-0.05 and along the [0 0 1] direction are performed by means of the model-solid theory combined with the empirical pseudopotential method under the virtual crystal approximation that takes into account the effects of the compositional disorder. It has been found that for y < x, the CBO and VBO have negative and positive signs, respectively, whereas the reverse is seen when y > x. The band gap of the GaAs1−xNx over layer falls completely inside the band gap of the substrate GaAs1−yNy and thus the alignment is of type I (straddling) for y < x. When y > x, the alignment remains of type I but in this case it is the band gap of the substrate GaAs1−yNy which is fully inside the band gap of the GaAs1−xNx over layer. Besides the CBO, the VBO and the relaxed/strained band gap of two particular cases: GaAs1−xNx/GaAs and GaAs1−xNx/GaAs0.98N0.02 heterointerfaces have been determined. 相似文献
9.
O22−-doped NaCl crystals are colored electrolytically by using a pointed cathode and a flat anode at various temperatures and voltages, which mainly benefit from appropriate coloration temperatures and voltages as well as anode structure of used electrolysis apparatus. Characteristic OH−, U, V2m, UA, V2, V3, O2−-Va+ complex, F, R1, R2 and M absorption bands are observed in absorption spectra of the colored crystals. Production and conversion of color centers in electrolytic coloration is explained. Current-time curves for electrolytic colorations and their relationships with electrolytic colorations were given. 相似文献
10.
A. Alsaad A. Ahmad 《The European Physical Journal B - Condensed Matter and Complex Systems》2006,54(2):151-156
First-principles calculations are performed to compute the e33
piezoelectric coefficients of GaN, ScN and (ScxGa1-xN) alloys
exhibiting an alternation of hexagonal GaN, with hexagonal ScN along the c-axis. For Sc compositions larger than 50%, each atom has nearly five nearest
neighbors (i.e., the ground state exhibits a phase that is five-fold
coordinated). On the other hand, Sc-deficient (Sc, Ga) N alloys adopt a
ground-state that is four-fold coordinated). The magnitude of e33 in
the Sc-deficient ideally ordered (Sc0.25Ga0.75N) is found to be larger
than the magnitude of the corresponding e33 coefficients resulting from
the compositional weighted average over the hexagonal (h-ScN) and the wurtzite (w-GaN) parent compounds. On the other hand, the e33 coefficients of the Sc-rich
ordered (Sc0.75Ga0.25N) is found to be negligibly small. In addition, e33
piezoelectric coefficients in ordered (Sc0.5Ga0.5N) exhibit quite
large magnitudes, due to the nonpolar to polar transition occurs at Sc composition x = 0.5, and thus can bridge the corresponding coefficients of (Ga, In) N and
ferroelectric alloys. The microscopic origins for this huge enhancement in
the piezoelectric behavior in Sc-low and Sc-intermediate alloys and the role
of each atom are revealed and discussed. 相似文献