氦原子与非对称替代氢分子碰撞(E=0.3eV)角分布计算

用密耦方法计算了非对称同位素替代分子与氦原子碰撞(He-HD,HT,DT)转动激发,当入射能量E=0.3 eV时,得到了上述碰撞体系的微分散射截面或角分布.基于上述理论计算,讨论了原子与双原子分子碰撞的同位素效应.     

Dissociative excitation cross sections of the lead atom in collisions between electrons and PbI2 molecules

Dissociative excitation of the lead atom in e-PbI₂ collisions has been studied experimentally. 27 excitation cross sections were measured for an energy of the exciting electrons equal to 100 eV. Nine optical excitation functions were recorded with variation of the electron energy in the range 0–100 eV. The most probable reaction channels for low electron energies are discussed, as well as the ratio of the dissociative excitation cross sections for the lead atom in e-PbI₂ and e-PbCl₂ collisions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 6, pp. 701–706, November–December, 2006.     

Search for a reliable methodology for PSD determination based on a combined molecular simulation-regularization-experimental approach: The case of PHTS materials

We present here a methodology for searching a robust pore size distribution (PSD) for adsorbent materials. The method is based on a combination of individual adsorption isotherms, obtained from Grand Canonical Monte Carlo simulations, a regularization procedure to invert the adsorption integral equation (Tikhonov regularization solved by singular value decomposition), and the needed experimental adsorption isotherm. The selection of several parameters from the available choices to start the procedure are discussed here: the size of the kernel (number of individual pores and number of experimental adsorption points to be included), the fulfillment of the Discrete Picard condition, and the L-curve criteria, all leading to find a reliable and robust PSD. The procedure is applied to plugged hexagonal templated silicas (PHTS), synthesized, and characterized in our laboratory.     

修饰态布居的选择性激发对无反转激光的作用

以三能级V型系统为例研究修饰态布居的选择性激发对无反转激光增益的作用. 当非 相干驱动场的频谱宽度远小于驱动场产生的修饰态能级的间距时，非相干驱动场只将一个修 饰态的布居抽运至激发态. 借助原子的衰减通道，系统中形成单向布居转移通道，从而建立 修饰态布居的选择性激发. 利用修饰态布居的选择性激发，可以摆脱裸态共振无反转激光的 三个限制: (1) 不再要求辅助的低频驱动跃迁比高频激光跃迁具有更高的衰减速率；(2) 显 著降低非相干激发速率的阈值；(3) 无反转激光的线性增益不再反比于相干驱动场的强 关键词： 修饰态布居的选择性激发 无反转激光增益 原子衰减速率 非相干激发阈值速率     

Pr(0.5):ZBLAN的双频激发上转换发光的研究

报道了Pr(0.5):ZBLAN玻璃在双频双光束光源激发下的激发态上转换现象.发现上转换发射谱的荧光与常规荧光发射谱的荧光一致，还发现双频激发下的上转换激发谱有3个明显的谱峰，它们依此对应于788.5nm 1G4→3P2,850.5nm 1G4→1I6和805.0nm 3H6→1D2的激发态吸收跃迁，而大的850.5nm上转换激发谱峰是由大的1G4(Pr3+ )→1I6(Pr3+)跃迁的振子强度f=23.04×10-6所致.这说明起源于1G4能级的激发态吸收上转换尤其1G4(Pr3+)→1I6(Pr3+)     

Yb:FAP和Yb:C_3S_2-FAP晶体光谱的温度特性和选择激发

报导了Yb :FAP和Yb :C3S2 _FAP晶体在不同温度下的吸收光谱和荧光光谱实验结果 ,研究发现由于电子_声子近共振耦合作用 ,Yb :FAP和Yb :C3S2 _FAP晶体均存在有明显的振动谱 ,Yb :FAP晶体的零声子线在低温下还劈裂为相差 10cm- 1 的两条线 .采用激光选择激发技术研究了Yb3 离子在FAP和C3S2 _FAP晶体中的格位特征 ,结果表明Yb3 离子在这两种基质中都只占据Ca(Ⅱ )格位 ,但由于CaF2 的挥发 ,导致了Ca(Ⅱ )格位的局部畸变 .     

Sufficient conditions of non‐uniqueness for the Coulomb friction problem

We consider the Signorini problem with Coulomb friction in elasticity. Sufficient conditions of non‐uniqueness are obtained for the continuous model. These conditions are linked to the existence of real eigenvalues of an operator in a Hilbert space. We prove that, under appropriate conditions, real eigenvalues exist for a non‐local Coulomb friction model. Finite element approximation of the eigenvalue problem is considered and numerical experiments are performed. Copyright © 2003 John Wiley & Sons, Ltd.     

类铜离子的电子碰撞参数及其规律

用准相对论扭曲波方法系统地计算了Ｂａ、Ｎｄ、Ｇｄ、Ｙｂ、Ａｕ、Ｐｂ类铜离子组态能级之间的电子碰撞激发强度Ω（ｎｌ－ｎｌ），３≤ｎ≤７，４≤ｎ≤７，同时给出了高能极限的碰撞强度和外推到阈值的碰撞强度，用最小二乘样条方法拟合了全能域碰撞强度及热平均速率系数。对于一个激发过程，用１０个参数可以得到碰撞电子在任意能量下的碰撞强度以及任意温度下的速率系数。     

Universality in some classical Coulomb systems of restricted dimension

Coulomb systems in which the particles interact through thed-dimensional Coulomb potential but are confined in a flat manifold of dimensiond–1 are considered. The actual Coulomb potential acting is defined by particular boundary conditions involving a characteristic macroscopic distanceW in the direction perpendicular to the manifold: either it is periodic of periodW in that direction, or it vanishes on one ideal conductor wall parallel to the manifold at a distanceW from it, or it vanishes on two parallel walls at a distanceW from each other with the manifold equidistant from them. Under the assumptions that classical equilibrium statistical mechanics is applicable and that the system has the macroscopic properties of a conductor, it is shown that the suitably smoothed charge correlation function is universal, and that the free energy and the grand potential have universal dependences onW (universal means independent of the microscopic detail). The casesd=2 are discussed in detail, and the generic results are checked on an exactly solvable model. The cased=3 of a plane parallel to an ideal conductor is also explicitly worked out.Laboratoire associé au Centre National de la Recherche Scientifique-URA D0063.