基于模糊PID控制的InGaAs光电探测器的温控系统

InGaAs光电探测器性能的好坏与环境温度的变化密切相关,为了使探测器能有良好的工作特性,其工作环境温度必须具有高稳定度。温度控制系统以MSP430F149为控制核心,使用参数自整定的模糊PID控制算法,以脉宽调制的方式驱动半导体制冷器工作,实现对光电探测器的高精度温度控制。并对模糊PID控制的控制效果进行了SIMULINK仿真,最后在InGaAs光电探测器上进行了温度控制的实验。实验结果表明设计的温度控制系统可以达到±0.02℃的高精度控制,完全符合实际应用需要。     

Modelling the yield point phenomena during deformation at elevated temperatures: case study on Inconel 600

The discontinuous yield behaviour (DYB) of Inconel 600 was studied during hot compression tests at temperatures in range of 850–1150°C and strain rates of 0.001–1?s^?1. The yield point phenomena were observed in the temperature range of 850–1000°C and strain rates of 0.001–0.1 s^?1. The DYB was modelled by considering the evolution of dislocation density at the early stages of yielding. The opposite effects of dislocation multiplication, dislocation interaction (work hardening) and dynamic recovery (DRV) were considered. It was shown that the dislocation multiplication and DRV result in flow softening, while the dislocation interaction leads to work hardening. The model was established in a way to consider the effects of various microstructural evolutions on the σ(ε) function. The discontinuous flow curves were fitted by the developed model with acceptable precision. The variations of material constants with temperature and strain rate were found physically meaningful. The dislocation multiplication parameter was determined at various temperatures and strain rates. It was concluded that the rate of dislocation multiplication increases as temperature rises or strain rate declines. Accelerated dislocation multiplication leads to less drop in yield stress between the upper and lower yield points.