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1.
High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface. 相似文献
2.
Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer. 相似文献
3.
We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength. 相似文献
4.
c轴定向氮化铝薄膜的制备 总被引:3,自引:0,他引:3
利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。 相似文献
5.
Shiyang Sun Shouye Sun Yuan Ren Xin Tan Pingping Xu 《Surface and interface analysis : SIA》2020,52(4):167-173
The surface structure and properties of aluminum nitride (AlN) play an important role in many applications. Using the first principle calculations method, we analyzed the surface terminal structure of AlN and its evolution under different conditions by determining the surface energy, adsorption energy, and evaporation energy of the Al and N terminals on the AlN(0001) surface. Our results show that the reason why the N terminal is less stable than the Al terminal is not only because of its high surface energy but also because its adsorption performance is extremely sensitive to the adsorption position. The surface N atoms combine to form N2 molecules that escape during the evaporation process at high temperature. After surface N atoms escape, the AlN surface structure reconstitutes to form a hexagonal closest packing (HCP)–like structure, and the energy barrier for the reconstructing process is 3.2 eV. This shows that the structure and form of the AlN(0001) terminals depend on the environmental conditions. 相似文献
6.
The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping 下载免费PDF全文
Zn0.99Cu0.01O films were studied experimentally and theoretically.The films were prepared by pulsed-laser deposi tion on Pt(111)/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-dependence of the ferromag netic properties.The structural,magnetic,and optical properties were studied,and it was found that all the samples possess a typical wurtzite structure,and that the films exhibit room-temperature ferromagnetism.The sample deposited at 600℃and an oxygen pressure of 10 Pa showed a large saturation magnetization of 0.83μB/Cu.The enhanced ferromagnetism in the(Cu,Li)-codoped ZnO is attributable to the existence of Zn vacancies(VZn),as shown by first-principles calcu lations.The photoluminescence analysis demonstrated the existence of V Zn in both Zn0.99Cu0.01O and(Cu,Li)-codoped ZnO thin films,and this plays an important role in the increase of ferromagnetism,according to the results of first-principles calculations. 相似文献
7.
Jianwei Ben 《中国物理 B》2022,31(7):76104-076104
Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices. 相似文献
8.
9.
We explore the electronic structures and magnetic properties in Cu-doped MX2 (=MoS2, MoSe2, MoTe2, and WS2) based on density functional theory. A Cu dopant leads to a net moment of 5.0 or 1.0 μB in MX2, which mainly depend on the size of crystal-field splitting relative to that of the spin splitting. No magnetism is observed in Cu-doped MoTe2. The local distortion around the Cu atom reduces the total magnetic moment in two-Cu-doped MX2. The magnetic coupling between the nearest neighboring Cu atoms is ferromagnetic for all the cases, but they demonstrate various magnetic ground states with the increasing distance between Cu atoms: the Cu-doped MoS2 and WS2 exhibit anti-ferromagnetic and nonmagnetic ground state, respectively. A long-range ferromagnetic or ferrimagnetic coupling is attributed to double-exchange interaction in Cu-doped MoSe2. Half-metallic ferromagnetism with Curie temperature above room temperature in Cu-doped MoSe2 provides a useful guidance to engineer the magnetic properties of MoSe2 in experiments. 相似文献
10.