Isotopic families of contact manifolds for elliptic PDE

A test for a function to be a solution of an elliptic PDE is given in terms of extensions, as solutions, from the boundaries inside the domains belonging to an isotopic family. It generalizes a result of Ehrenpreis for spheres moved along a straight line.

     

基于CAPPFramework的CAPP系统的开发与应用

在国家863CIMS目标产品CAPPFramework系统的基础上，研究了面向对象的信息建模技术、信息模型驱动的所见即所得工艺设计技术、工作流技术．并在此基础上进行集成化、智能化计算机辅助工艺设计(CAPP)的应用与开发，实现了工艺设计的自动化，基本达到了在信息集成基础上的工艺设计与工艺信息管理一体化的目的，对企业的CAPP实施具有一定的参考价值．     

The exponential power law: partial wetting kinetics and dynamic contact angles

An equation for the kinetics of partial drop spreading is proposed. This equation was empirically derived from experimental data for the spreading kinetics of partially wetting liquids in terms of the wet area versus time. The equation has the form of an exponential power law (EPL), and transforms into the well-known power law for complete wetting, when the equilibrium contact angle approaches zero. The EPL fits very well available experimental data. To lend additional support to the validity of this generalized equation, it will be demonstrated that when it is transformed to present the dynamic contact angle (DCA), it fits very well DCA experimental data for other wetting processes, such as capillary flow and tape coating.     

完备可分度量群上的齐次Levy过程的复合Poisson逼近

该文利用算子半群的方法给出了取值于具有左不变度量的完备可分群的齐次Levy过程是复合Poisson过程的弱极限这一结论．     

Fabrication of patterned gold electrodes with spin-coated-and-fired Au(1 1 1) film by the soft lithography

We prepared high quality Au(1 1 1) film on Si wafer through the spin coating and thermal decomposition of a gold ink, spin-coated-and-fired (SCAF) Au film. The X-ray measurements, XRD and pole-figure analysis, showed that the SCAF Au film has a (1 1 1) out-of-plane orientation with a random in-plane orientation. In order to confirm the chemical activity of the SCAF Au film, we demonstrate the formation of patterned structures with the film by using soft lithography technique. The chemical activities of this physically stable SCAF Au film to the alkanethiols were at least equivalent those of physically deposited the Au films. The possibility of the mass production of micro patterned structure with the SCAF Au film was also demonstrated over the wide region on Si wafer by the microcontact lithography. These suggest that the Au film will help the easy fabrication of various nanosized devices on Si wafer and other substrates.     

一类过程摄动系统的无阻塞鲁棒性

使用参数Dioid模块网络法,把含大量摄动参数的在普通极大代数意义下非线性状态空间模型在参数Dioid意义下线性化,在此基础上研究一类过程摄动系统的无阻塞鲁棒性.给出了有限缓冲串行生产系统在没有缓冲器下无阻塞的充要条件和充分条件.     

Surface free energy of CrNx films deposited using closed field unbalanced magnetron sputtering

CrN_x thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrN_x films at temperatures in the range 20-170 °C. In this study CrN_x thin films with CrN, Cr(N), Cr₂N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr⁺² emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrN_x films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrN_x film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 °C. This is lower than that of Cr(N), Cr₂N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrN_x films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness.