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In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (ρc) to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of ρc was 1.99×10−4 Ω cm2 at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing. 相似文献
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This study elucidates the thermal stability and quasi ohmic contact characteristics of Cu(RuTaNx) fabricated on a barrierless GaAs substrate. Cu(RuTaNx) was prepared by cosputtering Cu, Ta, Ru, and N. The resistivity of the Cu(RuTaNx)/GaAs structure annealed at 500 °C for 30 min was lower than that of the as-deposited structure, and the former was thermally stable up to 500 °C after 30 min of annealing. Further, the Cu(RuTaNx)/GaAs structure exhibited electrical rectifying properties upon annealing at 550 °C for 10 min and revealed a quasi ohmic contact, as determined by the circular transmission line model (CTLM). The formation of quasi ohmic contact is further confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy. 相似文献
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