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1.
二氧化钒薄膜的低温制备及其性能研究   总被引:12,自引:0,他引:12       下载免费PDF全文
针对VO2薄膜在微测辐射热计上的应用,采用射频反应溅射法,在室温下制备氧化钒薄膜;研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压,先获得成分接近VO2的非晶化薄膜,再在400℃空气中氧化退火,便可制得高电阻温度系数,低电阻率的VO2薄膜,电阻温度系数约为-4%/℃,薄膜方块电阻为R为100—300kΩ;薄膜在室温下沉积,400℃下退火的制备方法与微机电加工(micro electromechanic 关键词: 二氧化钒 电阻温度系数 氧分压 射频反应溅射法  相似文献   
2.
X-ray diffraction patterns of nanocrystalline Fe-Cu-Nb-Si-B (FINEMET) alloys reveal that bcc α-Fe/α-FeSi crystallites with the average grain size of 20(5) nm are dispersed in amorphous matrix. Enhanced electron—electron interaction (EEI) and quantum interference (QI) effects as well as electron-magnon (and/or electron-spin fluctuation) scattering turn out to be the main mechanisms that govern the temperature dependence of resistivity. Of all the inelastic scattering processes, inelastic electron-phonon scattering is the most effective mechanism to destroy phase coherence of electron wave functions. The diffusion constant, density of states at the Fermi level and the inelastic scattering time have been estimated, for the first time, for the alloys in question Article presented at the International Symposium on Advances in Superconductivity and Magnetism: Materials, Mechanisms and Devices, ASMM2D-2001, 25–28 September 2001, Mangalore, India.  相似文献   
3.
The relationship of resistivity versus synthesizing temperature of sol gel YBa_2Cu_3O_y samples was studied when prepared under flowing oxygen conditions. A set of high-temperature ρ-T curves was obtained for the whole process. After the sample finished the test measuring, its resistivity was ρ_{300}=9.83×10^{-3 }Ω·cm at room temperature. The ρ-T curve also showed that the orthorhombic-tetragonal phase transformation of sol-gel YBa_2Cu_3O_y sample occurred at 581℃ for the sample in the rising temperature process, but at 613℃ in the cooling process, lower than that of the samples made by using the conventional powder metallurgy methods.  相似文献   
4.
Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector.  相似文献   
5.
The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La2-xBaxCuO4 at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.  相似文献   
6.
We report resistivity and magnetization measurements on an amorphous Ni74Mn24Pt2 thin film in the temperature range of 3–300 K. Two significant features are apparent in both the magnetic susceptibility and electrical resistivity. A low-temperature (low-T) anomaly is observed at about 40 K, where a cusp appears in the resistivity, while a concomitant step-like increase in zero-field-cooled (ZFC) magnetization (M) appears with increasing temperature. The low-T anomaly is attributed to a crossover from a pure re-entrant spin-glass within individual domains to a mixed ferro-spin-glass regime at lower temperatures. By contrast, the high-temperature (high-T) anomaly, signaled by the appearance of hysteresis below 250 K, corresponds to the freezing of transverse spins in individual domains acting independently. Between the low-T and high-T anomalies a small but discernable magnetic hysteresis is observed for warming vs. cooling in the field-cooled (FC) case. This behavior clearly indicates the presence of domain structure in the sample, while the disappearance of this hysteresis at lower temperatures indicates the complete freezing of the spin orientation of these domains. According to these results, we have divided the magnetic state of this sample into three regions: at temperatures above 250 K, the sample behaves like a soft ferromagnet, exhibiting M vs. H loops with very small hysteresis (less than 5 Oe). As the temperature is lowered into the intermediate region (the range 40–250 K), spins become frozen randomly and progressively within the individual domains. These domains behave independently, rather than as a cooperative behavior of the sample. Weak irreversibility sets in, indicating the onset of transverse spin freezing within the domains. At temperatures below 40 K, the M vs. H loops exhibit larger hysteresis, for both the ZFC and FC cases, as in a pure spin-glass. We have also demonstrated giant noise in the resistivity at temperatures just below 250 K. Such noise can originate from fluctuations of the domains near the film surface because of competing effective bulk and surface anisotropy fields. The large observed amplitude may be explained by means of a large ferromagnetic anisotropy in the resistivity due to the large spin–orbit effect seen in NiMn systems. Finally, the low-T peak in the resistivity has been analyzed using Fisher and Langer's expression based on the Friedel Model proposed for critical transitions in transition metals (sd systems). The fitted results are in satisfactory agreement with the predictions of this model.  相似文献   
7.
本文在经典风险模型的基础上,将索赔到达过程推广为更新过程,索赔可以批量到达,且带有常数利息力和Brown运动干扰项,得到一个新的风险模型,运用Markov骨架过程的方法,得出盈余过程的瞬时分布和生存概率.  相似文献   
8.
采用精确的结构因数实验数据和Behavi模型赝势,用Ziman理论计算了液态铅的电阻率.计算结果和实验数据符合很好.讨论了Ziman理论对液态铅的适用性以及适合于液态铅的赝势的特征.  相似文献   
9.
InAs/GaSb/AlSb resonant tunneling spin device concepts   总被引:1,自引:0,他引:1  
We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.  相似文献   
10.
A new Co–Fe-based ferromagnetic bulk metallic glass (BMG) was synthesized by copper mould casting method. The thermal stability and crystallization processes were investigated by differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The soft magnetic behavior was studied by DC magnetic measurements. The high glass formation ability was interpreted in terms of the effective suppression of nucleation and growth of the intermetallic compounds which appear in the multicomponent system during solidification. The high thermal stability indicates that the new Co–Fe-based BMG could be used as high-temperature magnetic material. The low coercivity which was as low as 8 A/m for the as-cast sample was found in the Co–Fe-based metallic glass cylinder with a diameter of 1.5 mm.  相似文献   
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