Surface structure investigations using noncontact atomic force microscopy

Surfaces of several A_IIIB_V compound semiconductors (InSb, GaAs, InP, InAs) of the (0 0 1) orientation have been studied with noncontact atomic force microscopy (NC-AFM). Obtained atomically resolved patterns have been compared with structural models available in the literature. It is shown that NC-AFM is an efficient tool for imaging complex surface structures in real space. It is also demonstrated that the recent structural models of III-V compound surfaces provide a sound base for interpretation of majority of features present in recorded patterns. However, there are also many new findings revealed by the NC-AFM method that is still new experimental technique in the context of surface structure determination.     

III-V compound semiconductor (001) surfaces

There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry. Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002     

Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

Multiband Terahertz Photonic Band Gaps of Subwavelength Planar Fractals

Optical transmission properties of subwavelength planar fractals in terahertz （THz） frequency regime are studied by means of time-domain spectroscopy. The transmission spectra with multiple pass bands and stop bands are observed. The tunable photonic band gaps are realized by changing the angle between the principle axis of planar fractal and the polarization of THz wave. The possible application of the subwavelength optical component is discussed. We attribute the detected transmittance from subwavelength fractals to localized resonances.     

Nanoindentation on carbon thin films obtained from a C60 ion beam

Raman spectra, atomic force microscope (AFM) images, hardness (H) and Young's modulus (E) measurements were carried out in order to characterize carbon thin films obtained from a C₆₀ ion beam on silicon substrates at different deposition energies (from 100 up to 500 eV). The mechanical properties were studied via the nanoindentation technique. It has been observed by Raman spectroscopy and AFM that the microstructure presents significant changes for films deposited at energies close to 300 eV. However, these remarkable changes have not been noticeable on the mechanical properties: apparently H and E increase with higher deposition energy up to ∼11 and ∼116 GPa, respectively. These values are underestimated if the influence of the film roughness is not taken into account.     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.     

The influence of the oxygen exposure on the thermal faceting of W[1 1 1] tip

The oxygen induced faceting of the macroscopic W[1 1 1] tip has been studied for oxygen exposures in the range 0.5-31 L and annealing temperatures 800-1800 K using the field ion microscopy (FIM) technique. After annealing at temperatures lower than 800 K, higher than 1850 K or for exposures lower than 0.5 L faceting was not observed. For exposures 0.5-1.9 L and annealing temperatures 800-1600 K well developed {1 1 2} facets with sharp edges formed. For exposures higher than 2.0 L edges of the {1 1 2} facets were broadening and disappearing, what has been attributed to the formation of three-dimensional tungsten oxides. The oxides could be easily removed by annealing the tip at 1700 K, what leads to formation of sharp facet edges. On the basis of these results a modified procedure of the ultrasharp tip fabrication has been proposed.     

Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures

We have combined a home-built capacitance sensor with a commercial scanning force microscope to obtain a Scanning Capacitance Microscope (SCM). The SCM has been used to study Nitride-Oxide-Silicon (NOS) heterostructures which offer potential applications in charge storage technology. Charge writing and reading on a submicrometer scale is demonstrated with our SCM setup. In addition, SCM appears to be very useful for the characterization of subsurface defects in semiconductor devices which are inaccessible by most of the other scanning probe microscopies. Finally, we introduce a novel spectroscopic mode of SCM operation which offers combined voltage-dependent and spatially resolved information about inhomogeneous charge distributions in semiconductor devices.     

Real-time measurement and control of particle-number density and size of the detonation products of lead azide

Time-resolved measurement and modeling of the number density and size of lead particles produced following the detonation of Lead Azide (LA) are presented. Particles expanding freely into vacuum through a supersonic nozzle or interacting with a barrier placed above the LA sample are monitored via attenuation of laser beams at 0.67, 1.3 and 10.6 µm. The attenuation depends on the conditions of expansion, but is always much more pronounced at 0.67 µm and 1.3 µm. From the ratio between the attenuations at 0.67 µm and 10.6 µm, the radius and number density of the particles are calculated applying Beer's law and Mie's theory. It is found that 20–90 µs following the detonation the attenuation at 32–36 mm above the LA sample is due to particles with radii of 0.9, 0.7 and 0.1 µm for free expansion into vacuum through the nozzle or near the barrier, respectively. Also, the expansion through the nozzle results in a transparent medium above the nozzle exit for the first few µs following the detonation. The effect of the nozzle is attributed to the fact that the velocity of the expanding detonation products is supersonic, which leads to compression and heating in the throat region, in contrast to the more familiar phenomenon of cooling at subsonic velocities. The dynamics of particles expanding under the different conditions and the mechanism of size reduction and elimination of particles is discussed.     

Study of Fe/Mo multilayer systems by SFM and AES

Received: 13 August 1998 / Published online: 10 February 1999