超导太赫兹天线耦合微测辐射热检测器

超导太赫兹天线耦合微测辐射热检测器具备探测频段宽、响应速度快、灵敏度高、易于阵列化等特点因而具备广阔的应用前景.本文的主要工作是设计并微纳加工出基于氮化铌薄膜的超导器件,针对所制备器件的关键参数进行了表征.测试结果显示,当浴冷温度为4K 时,器件响应时间为4μs,噪声等效功率达到30fW/Hz0.5.基于所制备的器件进行了陶瓷刀被动扫描成像实验并取得了良好的成像效果     

辐射量热计在HT-6BTokamak上的测量

一、引言 在现行的托卡马克实验中,辐射损失和中性粒子损失是高温等离子体能量损失的主要通道之一。为了更好地了解托卡马克等离子体中能量平衡、辐射损失以及这些损失随等离子体参数的变化;了解等离子体中杂质含量和杂质输运以及等离子体与器壁的相互作用,辐射能量损失的时间特性、空间分布的测量显得很有必要。为     

Patterning of oxide-hardened gold black by photolithography and metal lift-off

A method to pattern infrared-absorbing gold black by conventional photolithography and lift-off is described. A photo-resist pattern is developed on a substrate by standard photolithography. Gold black is deposited over the whole by thermal evaporation in an inert gas at ∼1 Torr. SiO₂ is then deposited as a protection layer by electron beam evaporation. Lift-off proceeds by dissolving the photoresist in acetone. The resulting sub-millimeter size gold black patterns that remain on the substrate retain high infrared absorption out to ∼5 μm wavelength and exhibit good mechanical stability. This technique allows selective application of gold black coatings to the pixels of thermal infrared imaging array detectors.     

Tomographic reconstruction of two-dimensional radiated power distribution during impurity injection in KSTAR plasmas using an infrared imaging video bolometer

Based on the two-dimensional radiation images obtained by an infrared imaging video bolometer (IRVB) with tangential view, the two dimensional radiation profiles of plasmas in KSTAR were reconstructed. The IRVB installed on KSTAR has a tangential view of the plasma, and thus tomographic reconstruction of the raw images of radiation profiles was performed to remove the chord-integration effect by using a tomographic reconstruction code based on the Phillips-Tikhonov algorithm. Phantom reconstruction tests with various synthetic images were carried out to validate the accuracy of the reconstruction results. It is found that hollow radiation phantoms with strong divertor radiation were reconstructed with high accuracy. Furthermore, the effects of the number of channels of the IR camera, and the number of pixels of the plasma and of the IRVB on reconstruction performance are studied with phantom tests. Two-dimensionally reconstructed images of KSTAR plasmas demonstrated that radiation loss at the plasma edge and near the divertor region increased significantly after gaseous impurity injection. The total radiated power was up to 1.2 MW at the disruption, which was 40% of the NBI power. After argon and krypton gas injection, total radiated power was increased by 325 kW and 180 kW, respectively.     

Monolithic Uncooled 8 × 8 Bolometer Arrays Based on Poly-SiGe Thermistor

This paper presents a monolithic uncooled 8 × 8 bolometer array with polycrystalline silicon-germanium (poly-SiGe) thermistors as active elements. The poly-SiGe films are deposited by ultrahigh vacuum vapor deposition (UHV/CVD) system and the dependence of the temperature coefficient of resistance (TCR) on annealing temperature has been investigated. To decrease the thermal conductance of the bolometer, the poly-SiGe thermistor was formed on a four leg suspended microbridge. The improved porous silicon micromachining techniques described here enable the integration of the bolometer array with the MOS readout circuitry. The measurements and calculations show that the mean responsivity is 1.07 × 10⁴ V/W with an uncorrected uniformity of 10.5% and a thermal response time of 10.5 ms, and the detectivity of 3.75 × 10⁸ cm Hz^1/2/W is achieved at a chopping frequency of 30 Hz and a bias voltage of 5 V.     

利用薄膜量热计测量高功率Z箍缩软X射线总能量

 介绍一种采用脉冲恒压电源驱动的镍薄膜量热计，研制了测量系统和镍薄膜探测器，对探测器的电阻 温度特性进行了实验标定，该量热计已成功应用于测量“强光一号”加速器高功率Z箍缩等离子体软X射线总能量，分析了测量不确定度。     

HL－1装置等离子体辐射损失实验研究

本文叙述了在器壁碳化、抽气孔栏、偏压电极、送杂质气体、ＥＣＲＨ加热和弹丸注入等实验条件下用多道辐射热探测器（Ｂｏｌｏｍｅｔｅｒ）阵列测得的ＨＬ－１等离子体辐射损失，并给出了辐射损失的时空分布图。     

Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films

In this investigation the composite SiO_x〈Ti〉 films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO₂) and Тi powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiO_x〈Ti〉 layers with resistance (for monopixel of 0.8 × 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to −2.22% K⁻¹. IR spectrum of SiO_x〈Ti〉 film is characterized by a broad absorption band in the range of 8–12 μm which is associated with the Si–O–Si stretching mode.Investigations of the effect of gamma irradiation on SiO_x〈Ti〉 films have shown that their temperature-sensitive properties, in particular TCR does not change up to a dose of 10⁶ Gy.These results suggest that SiO_x〈Ti〉 films can be used as materials for production of radiation-resistant thermosensitive detectors operated in radiation fields of γ-radiation and combining functions of IR-absorption and formation of an electric signal.     

Noise behavior of amorphous GexSi1−xOy for microbolometer applications

High resistivity sputtered a-Ge_xSi_1−xO_y compound was investigated for application to microbolometer fabrication for thermal imaging. Noise behavior of the fabricated bolometers was measured, showing no evidence of random telegraph switching (RTS) noise. 1/f noise was measured at several measuring currents, resulting in a 1/f noise factor of 2.9 × 10⁻¹¹ that can be used for further design and modeling.     

Device-level vacuum packaged uncooled microbolometer on a polyimide substrate

Uncooled infrared detectors (IR) on a polyimide substrate have been demonstrated where amorphous silicon (a-Si) was used as the thermometer material. New concepts in uncooled microbolometers were implemented during the design and fabrication, such as the integration of a germanium long-pass optical filter with the device-level vacuum package and a double layer absorber structure. Polyimide was used for this preliminary work towards vacuum-packaged flexible microbolometers. The detectors were fabricated utilizing a carrier wafer and low adhesion strength release layer to hold the flexible polyimide substrate during fabrication in order to increase the release yield. The IR detectors showed a maximum detectivity of 4.54 × 10⁶ cm Hz^1/2/W at a 4 Hz chopper frequency and a minimum noise equivalent power (NEP) of 7.72 × 10⁻¹⁰ W/Hz^1/2 at a biasing power of 5.71 pW measured over the infrared wavelength range of 8–14 μm for a 35 μm × 35 μm detector. These values are comparable to other flexible microbolometers with device-level vacuum packaging which are found in literature.